| Time-dependent dielectric breakdown in 45-nm PD-SOI N-channel FETs at cryogenic temperatures for quantum computing applications A Amin, S Gupta, P Srinivasan, OH Gonzalez, F Guarin, A Dixit IEEE Transactions on Device and Materials Reliability, 2023 | 2 | 2023 |
| Deep cryogenic temperature TDDB in 45-nm PDSOI N-channel FETs for quantum computing applications A Amin, A Rathi, SK Singh, A Dixit, OH Gonzalez, P Srinivasan, F Guarin 2022 IEEE International Reliability Physics Symposium (IRPS), 11A. 5-1-11A. 5-6, 2022 | 2 | 2022 |
| High-Temperature TDDB Investigation on High Performance-Centered Hybrid HZO/HfON/Al2O3, Ferro-Electric Charge-Trap (FEG) GaN-HEMT SK Rathaur, JS Wu, TY Yang, A Amin, A Dixit, EY Chang IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| Impact of Chuck Temperature on Flicker Noise (1/f) Performance of PDSOI n-channel MOSFETs S Pathak, A Amin, P Srinivasan, F Guarin, A Dixit 2022 IEEE Latin American Electron Devices Conference (LAEDC), 1-4, 2022 | 1 | 2022 |
| Impact of Area-to-Perimeter Ratio Layout Effect on TDDB in 45-nm PDSOI N-channel FETs A Amin, A Rathi, P Srinivasan, OH Gonzalez, A Dixit 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | | 2024 |
| Impact of Area-to-Perimeter Ratio Layout Effect on TDDB in 45-nm PDSOI N-channel FETs Asifa Amin, Aarti Rathi, P. Srinivasan, Oscar H. Gonzalez, and Abhisek Dixit to be presented at IEEE-EDTM, Bangalore, India, 2024 | | 2024 |
| Investigation and Modeling of Multifrequency CV characteristics for 10-nm Bulk FinFETs at Cryogenic Temperatures S Gupta, A Amin, RA Vega, A Dixit Solid-State Electronics 211, 108820, 2024 | | 2024 |
Abhisek DixitNXP Chair Professor, Electrical Engineering, IIT Delhi, New Delhi, IndiaVerified email at ee.iitd.ac.in
