| Through-silicon-trench in back-side-illuminated CMOS image sensors for the improvement of gate oxide long term performance A Vici, F Russo, N Lovisi, L Latessa, A Marchioni, A Casella, F Irrera 2018 IEEE International Electron Devices Meeting (IEDM), 32.3. 1-32.3. 4, 2018 | 5 | 2018 |
| Cyclic Thermal Effects on Devices of Two‐Dimensional Layered Semiconducting Materials Y Kim, B Kaczer, D Verreck, A Grill, D Kim, J Song, J Diaz‐Fortuny, A Vici, ... Advanced Electronic Materials 7 (9), 2100348, 2021 | 4 | 2021 |
| Combining SILC and BD statistics for low-voltage lifetime projection in HK/MG stacks A Vici, R Degraeve, JP Bastos, P Roussel, I De Wolf 2022 IEEE International Reliability Physics Symposium (IRPS), P27-1-P27-5, 2022 | 3 | 2022 |
| A multi-energy level agnostic simulation approach to defect generation A Vici, R Degraeve, B Kaczer, J Franco, S Van Beek, I De Wolf Solid-State Electronics 184, 108056, 2021 | 2 | 2021 |
| Performance and reliability degradation of CMOS Image Sensors in Back-Side Illuminated configuration A Vici, F Russo, N Lovisi, A Marchioni, A Casella, F Irrera IEEE Journal of the Electron Devices Society 8, 765-772, 2020 | 2 | 2020 |
| Generation of oxide traps in Back-Side-Illuminated CMOS Image Sensors and impact on reliability A Vici, F Russo, N Lovisi, A Marchioni, A Casella, F Irrera ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019 | 2 | 2019 |
| A multi-energy level agnostic approach for defect generation during TDDB stress A Vici, R Degraeve, B Kaczer, J Franco, S Van Beek, I De Wolf Solid-State Electronics 193, 108298, 2022 | 1 | 2022 |
| Significant enhancement of HCD and TDDB in CMOS FETs by mechanical stress K Lee, B Kaczer, A Kruv, M Gonzalez, G Eneman, OO Okudur, A Grill, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 10A. 3-1-10A. 3-6, 2022 | 1 | 2022 |
| On Border Traps in Back-Side-Illuminated CMOS Image Sensor Oxides A Vici, F Russo, N Lovisi, F Irrera IEEE Transactions on Electron Devices 67 (5), 2022-2027, 2020 | 1 | 2020 |
| Direct Evidence of Contact-Induced Variability in Industrially-Fabricated Highly-Scaled MoS2 FETs L Panarella, B Kaczer, Q Smets, S Tyaginov, PS Canflanca, A Vici, ... | | 2024 |
| Analytical Markov Model to Calculate TDDB at Any Voltage and Temperature Stress Condition A Vici, R Degraeve, J Franco, B Kaczer, PJ Roussel, I De Wolf IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology P Saraza-Canflanca, J Diaz-Fortuny, A Vici, E Bury, R Degraeve, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023 | | 2023 |
| Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations A Vici, R Degraeve, PJ Roussel, J Franco, B Kaczer, I De Wolf 2023 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2023 | | 2023 |
Ben KaczerimecVerified email at imec.be
