| Enhancement-mode GaN transistor technology for harsh environment operation M Yuan, J Niroula, Q Xie, NS Rajput, K Fu, S Luo, SK Das, AJB Iqbal, ... IEEE Electron Device Letters, 2023 | 11 | 2023 |
| Stable heating above 900 K in the field emission of ZnO nanowires: Mechanism for achieving high current in large scale field emitter arrays Y Chen, S Luo, X Cao, Y Li, J She, S Deng, J Chen Advanced Electronic Materials 6 (11), 2000624, 2020 | 10 | 2020 |
| GaN-based threshold switching behaviors at high temperatures enabled by interface engineering for harsh environment memory applications K Fu, S Luo, H Fu, K Hatch, SR Alugubelli, H Liu, T Li, M Xu, Z Mei, Z He, ... IEEE Transactions on Electron Devices, 2023 | 6 | 2023 |
| Towards DTCO in high temperature GaN-on-Si technology: Arithmetic logic unit at 300 C and CAD framework up to 500 C Q Xie, M Yuan, J Niroula, B Sikder, S Luo, K Fu, NS Rajput, AB Pranta, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 6 | 2023 |
| Concept for realizing high output power density thermionic energy convertor by field-assisted thermionic emission using a direct-tunneling metal–insulator–graphene cathode Y Chen, Z Li, S Luo, S Deng, J Chen IEEE Transactions on Electron Devices 68 (8), 4144-4149, 2021 | 4 | 2021 |
| Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments S Luo, K Fu, Q Xie, M Yuan, G Gao, H Guo, R Xu, N Giles, T Li, Z Mei, ... Applied Physics Letters 123 (24), 2023 | 3 | 2023 |
| Vertical β-Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer M Xu, A Biswas, T Li, Z He, S Luo, Z Mei, J Zhou, C Chang, AB Puthirath, ... Applied Physics Letters 123 (23), 2023 | 3 | 2023 |
| Theoretical analysis of efficiency for vacuum photoelectric energy converters with plasmon-enhanced electron emitter S Luo, Y Chen, Z Li, J Chen Journal of Applied Physics 130 (2), 2021 | 1 | 2021 |
| High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500° C J Niroula, Q Xie, NS Rajput, PK Darmawi-Iskandar, SI Rahman, S Luo, ... Applied Physics Letters 124 (20), 2024 | | 2024 |
| Modulation of dielectric properties of hexagonal/cubic boron nitride composites M Xu, Z He, A Biswas, S Luo, T Li, C Chang, C Li, B Gao, R Vajtai, P Dai, ... Applied Physics Letters 124 (19), 2024 | | 2024 |
| Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments Q Xie, J Niroula, NS Rajput, M Yuan, S Luo, K Fu, MF Isamotu, RH Palash, ... Applied Physics Letters 124 (17), 2024 | | 2024 |
| Picosecond magneto-optic thermometry measurements of nanoscale thermal transport in AlN thin films F Angeles, S Khan, VH Ortiz, M Xu, S Luo, DH Mudiyanselage, H Fu, ... APL Materials 11 (6), 2023 | | 2023 |
| Gallium Oxide as Photonic Integrated Platforms in the UV–Visible Spectra J Zhou, X Zhao, R Xu, X Zhang, K Fu, T Li, M Xu, S Luo, Z He, ... CLEO: Applications and Technology, JW2A. 104, 2023 | | 2023 |
| TX 77005, USA Q Xie, J Niroula, NS Rajput, M Yuan, S Luo, W Hunter, N Chowdhury, ... | | |
Yuji ZhaoProfessor, Electrical and Computer Engineering, Rice UniversityVerified email at rice.edu
