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Francesco La Via
Francesco La Via
CNR-IMM
Verified email at imm.cnr.it - Homepage
Title
Cited by
Cited by
Year
Richardson’s constant in inhomogeneous silicon carbide Schottky contacts
F Roccaforte, F La Via, V Raineri, R Pierobon, E Zanoni
Journal of Applied Physics 93 (11), 9137-9144, 2003
2862003
The NUMEN project: NUclear Matrix Elements for Neutrinoless double beta decay
F Cappuzzello, C Agodi, M Cavallaro, D Carbone, S Tudisco, D Lo Presti, ...
The European Physical Journal A 54, 1-46, 2018
2162018
Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide
F La Via, F Roccaforte, A Makhtari, V Raineri, P Musumeci, L Calcagno
Microelectronic Engineering 60 (1-2), 269-282, 2002
1582002
Mechanisms of growth and defect properties of epitaxial SiC
F La Via, M Camarda, A La Magna
Applied Physics Reviews 1 (3), 2014
1562014
From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
F La Via, A Severino, R Anzalone, C Bongiorno, G Litrico, M Mauceri, ...
Materials Science in Semiconductor Processing 78, 57-68, 2018
1342018
4H SiC epitaxial growth with chlorine addition
F La Via, G Galvagno, G Foti, M Mauceri, S Leone, G Pistone, ...
Chemical vapor deposition 12 (8‐9), 509-515, 2006
1122006
Ohmic contacts to SiC
F Roccaforte, F La Via, V Raineri
International journal of high speed electronics and systems 15 (04), 781-820, 2005
1072005
Highly reproducible ideal SiC Schottky rectifiers: Effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height
F Roccaforte, F La Via, V Raineri, P Musumeci, L Calcagno, ...
Applied Physics A 77, 827-833, 2003
992003
Schottky–ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem?
F La Via, F Roccaforte, V Raineri, M Mauceri, A Ruggiero, P Musumeci, ...
Microelectronic Engineering 70 (2-4), 519-523, 2003
952003
Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates
A Severino, G D’arrigo, C Bongiorno, S Scalese, F La Via, G Foti
Journal of Applied Physics 102 (2), 2007
902007
4H-SiC epitaxial layer growth by trichlorosilane (TCS)
F La Via, G Izzo, M Mauceri, G Pistone, G Condorelli, L Perdicaro, ...
Journal of Crystal Growth 311 (1), 107-113, 2008
832008
SiCILIA—silicon carbide detectors for intense luminosity investigations and applications
S Tudisco, F La Via, C Agodi, C Altana, G Borghi, M Boscardin, ...
Sensors 18 (7), 2289, 2018
822018
Improvement of high temperature stability of nickel contacts on n-type 6H–SiC
F Roccaforte, F La Via, V Raineri, L Calcagno, P Musumeci
Applied surface science 184 (1-4), 295-298, 2001
822001
Structural and electrical properties of Ni∕ Ti Schottky contacts on silicon carbide upon thermal annealing
F Roccaforte, F La Via, A Baeri, V Raineri, L Calcagno, F Mangano
Journal of applied physics 96 (8), 4313-4318, 2004
772004
High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates
A Severino, C Bongiorno, N Piluso, M Italia, M Camarda, M Mauceri, ...
Thin Solid Films 518 (6), S165-S169, 2010
752010
High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas
M Cutroneo, P Musumeci, M Zimbone, L Torrisi, F La Via, D Margarone, ...
Journal of Materials Research 28 (1), 87-93, 2013
742013
Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier
L Calcagno, A Ruggiero, F Roccaforte, F La Via
Journal of Applied Physics 98 (2), 2005
732005
Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates
R Anzalone, A Severino, G D’arrigo, C Bongiorno, G Abbondanza, G Foti, ...
Journal of Applied Physics 105 (8), 2009
672009
Advanced residual stress analysis and FEM simulation on heteroepitaxial 3C–SiC for MEMS application
R Anzalone, G D'arrigo, M Camarda, C Locke, SE Saddow, F La Via
Journal of Microelectromechanical Systems 20 (3), 745-752, 2011
582011
A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures
M Camarda, A La Magna, F La Via
Journal of Computational Physics 227 (2), 1075-1093, 2007
562007
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