| Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids J Zhou, G Han, Q Li, Y Peng, X Lu, C Zhang, J Zhang, QQ Sun, DW Zhang, ... 2016 IEEE International Electron Devices Meeting (IEDM), 12.2. 1-12.2. 4, 2016 | 175 | 2016 |
| Negative differential resistance in negative capacitance FETs J Zhou, G Han, J Li, Y Liu, Y Peng, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Electron Device Letters 39 (4), 622-625, 2018 | 113 | 2018 |
| Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors With ZrO2 Seed Layers W Xiao, C Liu, Y Peng, S Zheng, Q Feng, C Zhang, J Zhang, Y Hao, ... IEEE Electron Device Letters 40 (5), 714-717, 2019 | 103 | 2019 |
| Ferroelectric negative capacitance GeSn PFETs with sub-20 mV/decade subthreshold swing J Zhou, G Han, Y Peng, Y Liu, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Electron Device Letters 38 (8), 1157-1160, 2017 | 81 | 2017 |
| Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements W Xiao, C Liu, Y Peng, S Zheng, Q Feng, C Zhang, J Zhang, Y Hao, ... Nanoscale research letters 14, 1-7, 2019 | 80 | 2019 |
| A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide L Chen, L Wang, Y Peng, X Feng, S Sarkar, S Li, B Li, L Liu, K Han, ... Advanced Electronic Materials 6 (6), 2000057, 2020 | 79 | 2020 |
| Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrOx J Zhou, Y Peng, G Han, Q Li, Y Liu, J Zhang, M Liao, QQ Sun, DW Zhang, ... IEEE Journal of the Electron Devices Society 6, 41-48, 2017 | 64 | 2017 |
| Frequency dependence of performance in Ge negative capacitance PFETs achieving sub-30 mV/decade swing and 110 mV hysteresis at MHz J Zhou, J Wu, G Han, R Kanyang, Y Peng, J Li, H Wang, Y Liu, J Zhang, ... 2017 IEEE International Electron Devices Meeting (IEDM), 15.5. 1-15.5. 4, 2017 | 50 | 2017 |
| Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrOx J Li, J Zhou, G Han, Y Liu, Y Peng, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Transactions on Electron Devices 65 (3), 1217-1222, 2018 | 44 | 2018 |
| ZrO2 Ferroelectric FET for Non-volatile Memory Application H Liu, C Wang, G Han, J Li, Y Peng, Y Liu, X Wang, N Zhong, C Duan, ... IEEE Electron Device Letters 40 (9), 1419-1422, 2019 | 42 | 2019 |
| HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability Y Peng, W Xiao, Y Liu, C Jin, X Deng, Y Zhang, F Liu, Y Zheng, Y Cheng, ... IEEE Electron Device Letters 43 (2), 216-219, 2021 | 40 | 2021 |
| Thermally Stable and Radiation Hard Ferroelectric Hf0.5Zr0.5O2 Thin Films on Muscovite Mica for Flexible Nonvolatile Memory Applications W Xiao, C Liu, Y Peng, S Zheng, Q Feng, C Zhang, J Zhang, Y Hao, ... ACS Applied Electronic Materials 1 (6), 919-927, 2019 | 39 | 2019 |
| Correlation of gate capacitance with drive current and transconductance in negative capacitance Ge PFETs J Li, J Zhou, G Han, Y Liu, Y Peng, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Electron Device Letters 38 (10), 1500-1503, 2017 | 37 | 2017 |
| Incomplete dipoles flipping produced near hysteresis-free negative capacitance transistors J Zhou, G Han, N Xu, J Li, Y Peng, Y Liu, J Zhang, QQ Sun, DW Zhang, ... IEEE Electron Device Letters 40 (2), 329-332, 2018 | 31 | 2018 |
| Experimental validation of depolarization field produced voltage gains in negative capacitance field-effect transistors J Zhou, G Han, N Xu, J Li, Y Peng, Y Liu, J Zhang, QQ Sun, DW Zhang, ... IEEE Transactions on Electron Devices 66 (10), 4419-4424, 2019 | 29 | 2019 |
| A novel negative capacitance tunnel FET with improved subthreshold swing and nearly non-hysteresis through hybrid modulation Y Zhao, Z Liang, Q Huang, C Chen, M Yang, Z Sun, K Zhu, H Wang, S Liu, ... IEEE electron device letters 40 (6), 989-992, 2019 | 29 | 2019 |
| Nonideality of negative capacitance Ge field-effect transistors without internal metal gate J Wu, R Kanyang, G Han, J Zhou, Y Liu, Y Wang, Y Peng, J Zhang, ... IEEE Electron Device Letters 39 (4), 614-617, 2018 | 26 | 2018 |
| Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films J Chen, C Jin, X Yu, X Jia, Y Peng, Y Liu, B Chen, R Cheng, G Han IEEE Transactions on Electron Devices 69 (9), 5297-5301, 2022 | 25 | 2022 |
| Ferroelectric-like behavior originating from oxygen vacancy dipoles in amorphous film for non-volatile memory Y Peng, G Han, F Liu, W Xiao, Y Liu, N Zhong, C Duan, Z Feng, H Dong, ... Nanoscale Research Letters 15, 1-6, 2020 | 25 | 2020 |
| Nanocrystal-embedded-insulator ferroelectric negative capacitance FETs with sub-kT/q swing Y Peng, W Xiao, G Han, J Wu, H Liu, Y Liu, N Xu, TJK Liu, Y Hao IEEE Electron Device Letters 40 (1), 9-12, 2018 | 25 | 2018 |
