| Method for manufacturing display device T Hattori, T Kuranaga, N Okada, M Hatano US Patent App. 13/114,074, 2011 | 101 | 2011 |
| Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation N Fukata, J Chen, T Sekiguchi, N Okada, K Murakami, T Tsurui, S Ito Applied physics letters 89 (20), 2006 | 70 | 2006 |
| Phonon confinement and self-limiting oxidation effect of silicon nanowires synthesized by laser ablation N Fukata, T Oshima, N Okada, K Murakami, T Kizuka, T Tsurui, S Ito Journal of applied physics 100 (2), 2006 | 61 | 2006 |
| Image display S Yamaguchi, M Hatano, T Hattori, N Okada US Patent 8,294,869, 2012 | 57 | 2012 |
| Gas-Source CVD Growth of Atomic Layered WS2 from WF6 and H2S Precursors with High Grain Size Uniformity M Okada, N Okada, WH Chang, T Endo, A Ando, T Shimizu, T Kubo, ... Scientific Reports 9 (1), 17678, 2019 | 41 | 2019 |
| Image display device and the method for manufacturing the same T Kuranaga, T Hattori, N Okada, M Hatano US Patent 8,759,126, 2014 | 37 | 2014 |
| Phonon confinement in silicon nanowires synthesized by laser ablation N Fukata, T Oshima, N Okada, T Kizuka, T Tsurui, S Ito, K Murakami Physica B: Condensed Matter 376, 864-867, 2006 | 27 | 2006 |
| Image display device and the method for manufacturing the same T Kuranaga, T Hattori, N Okada, M Hatano US Patent 8,963,171, 2015 | 16 | 2015 |
| Fermi-level depinning and contact resistance reduction in metal/n-Ge junctions by insertion of W-encapsulating Si cluster films N Okada, N Uchida, T Kanayama Applied Physics Letters 104 (6), 2014 | 16 | 2014 |
| Impurity doping in silicon nanowires synthesized by laser ablation N Fukata, S Matsushita, N Okada, J Chen, T Sekiguchi, N Uchida, ... Applied Physics A 93, 589-592, 2008 | 15 | 2008 |
| Si-rich W silicide films composed of W-atom-encapsulated Si clusters deposited using gas-phase reactions of WF6 with SiH4 N Okada, N Uchida, T Kanayama The Journal of Chemical Physics 144 (8), 2016 | 14 | 2016 |
| CVD grown bilayer WSe2/MoSe2 heterostructures for high performance tunnel transistors T Irisawa, N Okada, WH Chang, M Okada, T Mori, T Endo, Y Miyata Japanese Journal of Applied Physics 59 (SG), SGGH05, 2020 | 13 | 2020 |
| CVD Growth Technologies of Layered MX2 Materials for Real LSI Applications—Position and Growth Direction Control and Gas Source Synthesis T Irisawa, N Okada, W Mizubayashi, T Mori, WH Chang, K Koga, A Ando, ... IEEE Journal of the Electron Devices Society 6, 1159-1163, 2018 | 13 | 2018 |
| Micrometer-scale WS2 atomic layers grown by alkali metal free gas-source chemical vapor deposition with H2S and WF6 precursors M Okada, N Okada, WH Chang, T Shimizu, T Kubo, M Ishihara, T Irisawa Japanese Journal of Applied Physics 60 (SB), SBBH09, 2021 | 12 | 2021 |
| Display device N Okada, M Hatano, S Yamaguchi, T Hattori US Patent App. 12/702,850, 2010 | 11 | 2010 |
| Monolayer MoS 2 growth at the Au–SiO 2 interface HE Lim, T Irisawa, N Okada, M Okada, T Endo, Y Nakanishi, Y Maniwa, ... Nanoscale 11 (42), 19700-19704, 2019 | 9 | 2019 |
| Low-barrier heterojunction of epitaxial silicide composed of W-encapsulating Si clusters with n-type Si N Okada, N Uchida, T Kanayama Applied Physics Letters 101 (21), 2012 | 9 | 2012 |
| Thermal stability of amorphous Si-rich W silicide films composed of W-atom-encapsulated Si clusters N Okada, N Uchida, T Kanayama Journal of Applied Physics 121 (22), 2017 | 8 | 2017 |
| Electrical properties of amorphous and epitaxial Si-rich silicide films composed of W-atom-encapsulated Si clusters N Okada, N Uchida, T Kanayama Journal of Applied Physics 117 (9), 2015 | 6 | 2015 |
| ALD-ZrO2 gate dielectric with suppressed interfacial oxidation for high performance MoS2 top gate MOSFETs WH Chang, N Okada, M Horikawa, T Endo, Y Miyata, T Irisawa Japanese Journal of Applied Physics 60 (SB), SBBH03, 2021 | 5 | 2021 |
