| Asymmetric double-gate ferroelectric FET to decouple the tradeoff between thickness scaling and memory window Z Jiang, Y Xiao, S Chatterjee, H Mulaosmanovic, S Duenkel, S Soss, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 15 | 2022 |
| On the write schemes and efficiency of FeFET 1T NOR array for embedded nonvolatile memory and beyond Y Xiao, Y Xu, Z Jiang, S Deng, Z Zhao, A Mallick, L Sun, R Joshi, X Li, ... 2022 International Electron Devices Meeting (IEDM), 13.6. 1-13.6. 4, 2022 | 11 | 2022 |
| Overview of ferroelectric memory devices and reliability aware design optimization S Deng, Z Zhao, S Kurinec, K Ni, Y Xiao, T Yu, V Narayanan Proceedings of the 2021 on Great Lakes Symposium on VLSI, 473-478, 2021 | 10 | 2021 |
| Cmos-compatible ising machines built using bistable latches coupled through ferroelectric transistor arrays A Mallick, Z Zhao, MK Bashar, S Alam, MM Islam, Y Xiao, Y Xu, A Aziz, ... Scientific reports 13 (1), 1515, 2023 | 8 | 2023 |
| Design space exploration of ferroelectric tunnel junction toward crossbar memories N Jao, Y Xiao, AK Saha, SK Gupta, V Narayanan IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 7 …, 2021 | 8 | 2021 |
| On the feasibility of 1t ferroelectric FET memory array Z Jiang, Z Zhao, S Deng, Y Xiao, Y Xu, H Mulaosmanovic, S Duenkel, ... IEEE Transactions on Electron Devices 69 (12), 6722-6730, 2022 | 7 | 2022 |
| Predictive modeling of ferroelectric tunnel junctions for memory and analog weight cell applications Y Xiao, S Deng, Z Zhao, V Narayanan, K Ni 2021 IEEE International Electron Devices Meeting (IEDM), 15.5. 1-15.5. 4, 2021 | 6 | 2021 |
| Quasi-nondestructive read out of ferroelectric capacitor polarization by exploiting a 2tnc cell to relax the endurance requirement Y Xiao, S Deng, Z Zhao, Z Faris, Y Xu, TJ Huang, V Narayanan, K Ni IEEE Electron Device Letters, 2023 | 3 | 2023 |
| Ferroelectric FET-based context-switching FPGA enabling dynamic reconfiguration for adaptive deep learning machines Y Xu, Z Zhao, Y Xiao, T Yu, H Mulaosmanovic, D Kleimaier, S Duenkel, ... Science Advances 10 (3), eadk1525, 2024 | 2 | 2024 |
| Powering disturb-free reconfigurable computing and tunable analog electronics with dual-port ferroelectric FET Z Zhao, S Deng, S Chatterjee, Z Jiang, MS Islam, Y Xiao, Y Xu, ... ACS Applied Materials & Interfaces 15 (47), 54602-54610, 2023 | 2 | 2023 |
| Computational Associative Memory Powered by Ferroelectric Memory K Ni, Y Xiao, S Deng, V Narayanan 2023 Device Research Conference (DRC), 1-2, 2023 | 1 | 2023 |
| A Compact Ferroelectric 2T-(n+ 1) C Cell to Implement AND-OR Logic in Memory Y Xiao, Y Xu, S Deng, Z Zhao, S George, K Ni, V Narayanan 2023 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 1-6, 2023 | 1 | 2023 |
| Achieving crash consistency by employing persistent L1 cache AK Ramanathan, SM Shahri, Y Xiao, V Narayanan 2022 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2022 | 1 | 2022 |
| Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate Z Zhao, S Woo, KA Aabrar, SG Kirtania, Z Jiang, S Deng, Y Xiao, ... arXiv preprint arXiv:2403.04981, 2024 | | 2024 |
| Embedding security into ferroelectric FET array via in situ memory operation Y Xu, Y Xiao, Z Zhao, F Müller, A Vardar, X Gong, S George, T Kämpfe, ... Nature Communications 14 (1), 8287, 2023 | | 2023 |
| Comparative Advantages of 2T-nC FeRAM in Empowering High Density 3D Ferroelectric Capacitor Memory S Deng, Y Xiao, Z Zhao, TJ Huang, T Kampfe, V Narayanan, K Ni 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
