Yunyou LU
Title
Cited by
Cited by
Year
600-V Normally Off /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
Z Tang, Q Jiang, Y Lu, S Huang, S Yang, X Tang, KJ Chen
IEEE Electron Device Letters 34 (11), 1373-1375, 2013
1762013
High-Quality Interface in Al₂O₃/GaN/AlGaN/GaN MIS Structures With In Situ Pre-Gate Plasma Nitridation
S Yang, Z Tang, KY Wong, YS Lin, C Liu, Y Lu, S Huang, KJ Chen
IEEE Electron Device Letters 34 (12), 1497 - 1499, 2013
127*2013
Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs
Y Lu, S Yang, Q Jiang, Z Tang, B Li, KJ Chen
physica status solidi (c) 10 (11), 1397-1400, 2013
612013
Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques
S Yang, Z Tang, KY Wong, YS Lin, Y Lu, S Huang, KJ Chen
Electron Devices Meeting (IEDM), 2013 IEEE International, 6.3. 1-6.3. 4, 2013
55*2013
AC-capacitance techniques for interface trap analysis in GaN-based buried-channel MIS-HEMTs
S Yang, S Liu, Y Lu, C Liu, KJ Chen
IEEE Transactions on Electron Devices 62 (6), 1870-1878, 2015
502015
Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor
J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
IEEE Electron Device Letters 36 (12), 1287-1290, 2015
482015
1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform
Q Jiang, C Liu, Y Lu, KJ Chen
IEEE Electron Device Letters 34 (3), 357 - 359, 2013
382013
Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015
302015
Thermally induced threshold voltage instability of III-nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes
S Yang, S Liu, C Liu, Z Tang, Y Lu, KJ Chen
2014 IEEE International Electron Devices Meeting, 17.2. 1-17.2. 4, 2014
282014
Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs
KJ Chen, S Yang, Z Tang, S Huang, Y Lu, Q Jiang, S Liu, C Liu, B Li
physica status solidi (a) 212 (5), 1059-1065, 2015
272015
High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2O3gate dielectric for high-performance normally-off GaN MIS-HEMTs
S Huang, Q Jiang, K Wei, G Liu, J Zhang, X Wang, Y Zheng, B Sun, ...
2014 IEEE International Electron Devices Meeting, 17.4. 1-17.4. 4, 2014
242014
Dynamic Gate Stress-InducedShift and Its Impact on Dynamicin GaN MIS-HEMTs
S Yang, Y Lu, H Wang, S Liu, C Liu, KJ Chen
IEEE Electron Device Letters 37 (2), 157-160, 2015
212015
Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
M Hua, Y Lu, S Liu, C Liu, K Fu, Y Cai, B Zhang, KJ Chen
IEEE Electron Device Letters 37 (3), 265-268, 2016
172016
Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors
S Yang, S Liu, C Liu, Y Lu, KJ Chen
Applied Physics Letters 105 (22), 223508, 2014
162014
Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
Y Lu, Q Jiang, Z Tang, S Yang, C Liu, KJ Chen
Applied Physics Express 8 (6), 064101, 2015
132015
A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs
Q Jiang, Z Tang, C Liu, Y Lu, KJ Chen
IEEE Transactions on Electron Devices 61 (3), 762-768, 2014
132014
III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances
X Tang, B Li, Y Lu, H Wang, C Liu, J Wei, KJ Chen
2015 IEEE International Electron Devices Meeting (IEDM), 35.3. 1-35.3. 4, 2015
112015
Normally off Al 2 O 3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation
Y Lu, B Li, X Tang, Q Jiang, S Yang, Z Tang, KJ Chen
IEEE Transactions on Electron Devices 62 (3), 821-827, 2015
112015
Schottky-on-heterojunction optoelectronic functional devices realized on AlGaN/GaN-on-Si platform
B Li, X Tang, Q Jiang, Y Lu, H Wang, J Wang, KJ Chen
2014 IEEE International Electron Devices Meeting, 11.4. 1-11.4. 4, 2014
102014
650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric
M Hua, C Liu, S Yang, S Liu, Y Lu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
92015
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