| A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon C Convertino, C Zota, H Schmid, D Caimi, L Czornomaz, A Ionescu, ... Nature Electronics, 2021 | 75 | 2021 |
| III–V heterostructure tunnel field-effect transistor C Convertino, CB Zota, H Schmid, AM Ionescu, KE Moselund Journal of Physics: Condensed Matter 30 (26), 264005, 2018 | 59 | 2018 |
| Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm C Navarro, S Karg, C Marquez, S Navarro, C Convertino, C Zota, ... Nature Electronics 2 (9), 412-419, 2019 | 35 | 2019 |
| Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy M Borg, L Gignac, J Bruley, A Malmgren, S Sant, C Convertino, ... Nanotechnology 30 (8), 084004, 2018 | 35 | 2018 |
| InGaAs-on-insulator FinFETs with reduced off-current and record performance C Convertino, C Zota, S Sant, F Eltes, M Sousa, D Caimi, A Schenk, ... 2018 IEEE International Electron Devices Meeting (IEDM), 39.2. 1-39.2. 4, 2018 | 33 | 2018 |
| InGaAs FinFETs directly integrated on silicon by selective growth in oxide cavities C Convertino, C Zota, H Schmid, D Caimi, M Sousa, K Moselund, ... Materials 12 (1), 87, 2018 | 29 | 2018 |
| InGaAs FinFETs 3-D Sequentially Integrated on FDSOI Si CMOS With Record Performance C Convertino, C Zota, M Sousa, L Czornomaz IEEE Journal of the Electron Devices Society 7, 2019 | 19 | 2019 |
| High performance quantum well InGaAs-On-Si MOSFETs with sub-20 nm gate length for RF applications CB Zota, C Convertino, Y Baumgartner, M Sousa, D Caimi, L Czornomaz 2018 IEEE International Electron Devices Meeting (IEDM), 39.4. 1-39.4. 4, 2018 | 19 | 2018 |
| InGaAs-on-insulator MOSFETs featuring scaled logic devices and record RF performance CB Zota, C Convertino, V Deshpande, T Merkle, M Sousa, D Caimi, ... 2018 IEEE Symposium on VLSI Technology, 165-166, 2018 | 19 | 2018 |
| Sub-thermionic scalable III-V tunnel field-effect transistors integrated on Si (100) C Convertino, CB Zota, Y Baumgartner, P Staudinger, M Sousa, S Mauthe, ... 2019 IEEE International Electron Devices Meeting (IEDM), 37.1. 1-37.1. 4, 2019 | 17 | 2019 |
| High-frequency quantum well InGaAs-on-Si MOSFETs with scaled gate lengths CB Zota, C Convertino, M Sousa, D Caimi, K Moselund, L Czornomaz IEEE Electron Device Letters 40 (4), 538-541, 2019 | 16 | 2019 |
| III-V-on-CMOS devices and circuits: Opportunities in quantum infrastructure CB Zota, T Morf, P Müller, C Convertino, S Filipp, W Riess, L Czornomaz 2019 IEEE International Electron Devices Meeting (IEDM), 31.8. 1-31.8. 4, 2019 | 13 | 2019 |
| Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator TA Karatsori, K Bennamane, CG Theodorou, L Czornomaz, J Fompeyrine, ... 2018 48th European Solid-State Device Research Conference (ESSDERC), 166 - 169, 2018 | 10 | 2018 |
| High-performance InGaAs FinFETs with raised source/drain extensions C Convertino, CB Zota, D Caimi, M Sousa, KE Moselund, L Czornomaz Japanese Journal of Applied Physics 58 (8), 080901, 2019 | 9 | 2019 |
| Electro-optic frequency response of thin-film barium titanate (BTO) from 20 to 270 GHz D Chelladurai, M Kohli, Y Horst, M Eppenberger, L Kulmer, T Blatter, ... European Conference and Exhibition on Optical Communication, We5. 72, 2022 | 8 | 2022 |
| Plasmonic ferroelectric modulator monolithically integrated on SiN for 216 GBd data transmission M Kohli, D Chelladurai, A Messner, Y Horst, D Moor, J Winiger, T Blatter, ... Journal of Lightwave Technology 41 (12), 3825-3831, 2023 | 6 | 2023 |
| 216 GBd plasmonic ferroelectric modulator monolithically integrated on silicon nitride M Kohli, D Chelladurai, A Messner, Y Horst, D Moor, J Winiger, T Blatter, ... European Conference and Exhibition on Optical Communication, Tu4E. 5, 2022 | 6 | 2022 |
| Monolithic Integration of III-V on silicon for photonic and electronic applications S Mauthe, H Schmid, B Mayer, S Wirths, C Convertino, Y Baumgartner, ... 2018 76th Device Research Conference (DRC), 1-2, 2018 | 6 | 2018 |
| Simulation of low-noise amplifier with quantized ballistic nanowire channel C Marty, C Convertino, C Zota Semiconductor Science and Technology 35 (11), 115027, 2020 | 5 | 2020 |
| Effects of post metallization annealing on InGaAs-on-insulator MOSFETs on Si CB Zota, C Convertino, D Caimi, M Sousa, L Czornomaz 2019 Joint International EUROSOI Workshop and International Conference on …, 2019 | 5 | 2019 |
Kirsten MoselundIBM ResearchVerified email at zurich.ibm.com
