Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems J Woo, K Moon, J Song, S Lee, M Kwak, J Park, H Hwang IEEE Electron Device Letters 37 (8), 994-997, 2016 | 460 | 2016 |
HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications S Oh, T Kim, M Kwak, J Song, J Woo, S Jeon, IK Yoo, H Hwang IEEE Electron Device Letters 38 (6), 732-735, 2017 | 246 | 2017 |
TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic … J Park, M Kwak, K Moon, J Woo, D Lee, H Hwang IEEE Electron Device Letters 37 (12), 1559-1562, 2016 | 197 | 2016 |
Various threshold switching devices for integrate and fire neuron applications D Lee, M Kwak, K Moon, W Choi, J Park, J Yoo, J Song, S Lim, C Sung, ... Advanced Electronic Materials 5 (9), 1800866, 2019 | 119 | 2019 |
Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems J Woo, K Moon, J Song, M Kwak, J Park, H Hwang IEEE Transactions on Electron Devices 63 (12), 5064-5067, 2016 | 91 | 2016 |
Linking conductive filament properties and evolution to synaptic behavior of RRAM devices for neuromorphic applications J Woo, A Padovani, K Moon, M Kwak, L Larcher, H Hwang IEEE Electron Device Letters 38 (9), 1220-1223, 2017 | 84 | 2017 |
Near ideal synaptic functionalities in Li ion synaptic transistor using Li3POxSex electrolyte with high ionic conductivity RD Nikam, M Kwak, J Lee, KG Rajput, W Banerjee, H Hwang Scientific reports 9 (1), 18883, 2019 | 71 | 2019 |
Improved conductance linearity and conductance ratio of 1T2R synapse device for neuromorphic systems K Moon, M Kwak, J Park, D Lee, H Hwang IEEE Electron Device Letters 38 (8), 1023-1026, 2017 | 60 | 2017 |
Controlled ionic tunneling in lithium nanoionic synaptic transistor through atomically thin graphene layer for neuromorphic computing RD Nikam, M Kwak, J Lee, KG Rajput, H Hwang Advanced Electronic Materials 6 (2), 1901100, 2020 | 53 | 2020 |
Ionic Sieving Through One‐Atom‐Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing RD Nikam, J Lee, W Choi, W Banerjee, M Kwak, M Yadav, H Hwang Small 17 (44), 2103543, 2021 | 42 | 2021 |
All‐Solid‐State Oxygen Ion Electrochemical Random‐Access Memory for Neuromorphic Computing RD Nikam, M Kwak, H Hwang Advanced Electronic Materials 7 (5), 2100142, 2021 | 37 | 2021 |
Improved synaptic behavior of CBRAM using internal voltage divider for neuromorphic systems S Lim, M Kwak, H Hwang IEEE Transactions on Electron Devices 65 (9), 3976-3981, 2018 | 35 | 2018 |
Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO2. 7 stoichiometry with high ion diffusivity J Lee, RD Nikam, S Lim, M Kwak, H Hwang Nanotechnology 31 (23), 235203, 2020 | 33 | 2020 |
Understanding of proton induced synaptic behaviors in three-terminal synapse device for neuromorphic systems J Lee, S Lim, M Kwak, J Song, H Hwang Nanotechnology 30 (25), 255202, 2019 | 32 | 2019 |
Improvement of Synaptic Properties in Oxygen‐Based Synaptic Transistors Due to the Accelerated Ion Migration in Sub‐Stoichiometric Channels J Lee, RD Nikam, M Kwak, H Kwak, S Kim, H Hwang Advanced Electronic Materials 7 (8), 2100219, 2021 | 27 | 2021 |
Pr0.7Ca0.3MnO3-Based Three-Terminal Synapse for Neuromorphic Computing C Lee, KG Rajput, W Choi, M Kwak, RD Nikam, S Kim, H Hwang IEEE Electron Device Letters 41 (10), 1500-1503, 2020 | 23 | 2020 |
Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes J Park, C Lee, M Kwak, SA Chekol, S Lim, M Kim, J Woo, H Hwang, D Lee Nanotechnology 30 (30), 305202, 2019 | 22 | 2019 |
W/WO3− x based three-terminal synapse device with linear conductance change and high on/off ratio for neuromorphic application J Go, Y Kim, M Kwak, J Song, SA Chekol, JD Kwon, H Hwang Applied Physics Express 12 (2), 026503, 2019 | 20 | 2019 |
Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor C Lee, W Choi, M Kwak, S Kim, H Hwang Applied Physics Letters 119 (10), 2021 | 19 | 2021 |
Investigation of Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications C Sung, A Padovani, B Beltrando, D Lee, M Kwak, S Lim, L Larcher, ... IEEE Journal of The Electron Devices Society 7, 404-408, 2019 | 18 | 2019 |