| Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1–xZrxO2 R Athle, AEO Persson, A Irish, H Menon, R Timm, M Borg ACS applied materials & interfaces 13 (9), 11089-11095, 2021 | 35 | 2021 |
| High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon MS Ram, KM Persson, A Irish, A Jönsson, R Timm, LE Wernersson Nature Electronics 4 (12), 914-920, 2021 | 26 | 2021 |
| Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing R Athle, T Blom, A Irish, AEO Persson, LE Wernersson, R Timm, M Borg Advanced Materials Interfaces 9 (27), 2201038, 2022 | 11 | 2022 |
| A 2D bismuth-induced honeycomb surface structure on GaAs (111) Y Liu, S Benter, CS Ong, RP Maciel, L Bjork, A Irish, O Eriksson, ... ACS nano 17 (5), 5047-5058, 2023 | 9 | 2023 |
| Inducing ferroelastic domains in single-crystal perovskite nanowires using atomic force microscopy LAB Marçal, S Benter, A Irish, D Dzhigaev, E Oksenberg, A Rothman, ... Physical review materials 5 (6), L063001, 2021 | 9 | 2021 |
| Tuneable 2D surface Bismuth incorporation on InAs nanosheets S Benter, Y Liu, RDP Maciel, CS Ong, L Linnala, D Pan, A Irish, YP Liu, ... Nanoscale 15 (21), 9551-9559, 2023 | 4 | 2023 |
| Nitrogen plasma passivation of GaAs nanowires resolved by temperature dependent photoluminescence A Irish, X Zou, E Barrigon, G D’Acunto, R Timm, MT Borgström, A Yartsev Nano Express 3 (4), 045008, 2023 | 1 | 2023 |
| Passivation of Gallium Arsenide Nanowires for Solar Cells A Irish | | 2019 |
