| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1063 | 2018 |
| Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs J Wei, R Xie, H Xu, H Wang, Y Wang, M Hua, K Zhong, G Tang, J He, ... IEEE Electron Device Letters 40 (4), 526-529, 2019 | 123 | 2019 |
| Integration of LPCVD-SiNxgate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime M Hua, Z Zhang, J Wei, J Lei, G Tang, K Fu, Y Cai, B Zhang, KJ Chen 2016 IEEE International Electron Devices Meeting (IEDM), 10.4. 1-10.4. 4, 2016 | 117 | 2016 |
| Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen IEEE Transactions on Electron Devices 62 (10), 3215-3222, 2015 | 114 | 2015 |
| GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNxas Gate Dielectric M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen IEEE Electron Device Letters 36 (5), 448-450, 2015 | 98 | 2015 |
| GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNxas Gate Dielectric M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen IEEE Electron Device Letters 36 (5), 448-450, 2015 | 98 | 2015 |
| Tunable Properties of Novel Ga2O3 Monolayer for Electronic and Optoelectronic Applications Y Liao, Z Zhang, Z Gao, Q Qian, M Hua ACS applied materials & interfaces 12 (27), 30659-30669, 2020 | 91 | 2020 |
| Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen IEEE Electron Device Letters 36 (12), 1287-1290, 2015 | 91 | 2015 |
| Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer M Hua, J Wei, G Tang, Z Zhang, Q Qian, X Cai, N Wang, KJ Chen IEEE Electron Device Letters 38 (7), 929-932, 2017 | 83 | 2017 |
| O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors S Huang, X Liu, K Wei, G Liu, X Wang, B Sun, X Yang, B Shen, C Liu, ... Applied Physics Letters 106 (3), 2015 | 69 | 2015 |
| Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNx Gate Dielectric … J He, M Hua, Z Zhang, KJ Chen IEEE Transactions on Electron Devices 65 (8), 3185-3191, 2018 | 68 | 2018 |
| 650-V double-channel lateral Schottky barrier diode with dual-recess gated anode J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen IEEE Electron Device Letters 39 (2), 260-263, 2017 | 68 | 2017 |
| Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer Q Qian, B Li, M Hua, Z Zhang, F Lan, Y Xu, R Yan, KJ Chen Scientific reports 6 (1), 27676, 2016 | 56 | 2016 |
| Forecasting household electric appliances consumption and peak demand based on hybrid machine learning approach EU Haq, X Lyu, Y Jia, M Hua, F Ahmad Energy Reports 6, 1099-1105, 2020 | 52 | 2020 |
| Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen 2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015 | 52 | 2015 |
| E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs C Wang, M Hua, J Chen, S Yang, Z Zheng, J Wei, L Zhang, KJ Chen IEEE Electron Device Letters 41 (4), 545-548, 2020 | 51 | 2020 |
| Two-dimensional gallium oxide monolayer for gas-sensing application J Zhao, X Huang, Y Yin, Y Liao, H Mo, Q Qian, Y Guo, X Chen, Z Zhang, ... The Journal of Physical Chemistry Letters 12 (24), 5813-5820, 2021 | 46 | 2021 |
| OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs J Chen, M Hua, J Wei, J He, C Wang, Z Zheng, KJ Chen IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (3 …, 2020 | 45 | 2020 |
| Dependence of Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET M Hua, J Wei, Q Bao, Z Zhang, Z Zheng, KJ Chen IEEE Electron Device Letters 39 (3), 413-416, 2018 | 40 | 2018 |
| Compatibility of AlN/SiNxPassivation With LPCVD-SiNxGate Dielectric in GaN-Based MIS-HEMT M Hua, Y Lu, S Liu, C Liu, K Fu, Y Cai, B Zhang, KJ Chen IEEE Electron Device Letters 37 (3), 265-268, 2016 | 38 | 2016 |
Jin WeiPeking UniversityVerified email at pku.edu.cn
