Mengyuan Hua
Mengyuan Hua
Verified email at ust.hk
TitleCited byYear
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
2102018
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen
IEEE Transactions on Electron Devices 62 (10), 3215-3222, 2015
612015
Integration of LPCVD-SiNxgate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime
M Hua, Z Zhang, J Wei, J Lei, G Tang, K Fu, Y Cai, B Zhang, KJ Chen
2016 IEEE International Electron Devices Meeting (IEDM), 10.4. 1-10.4. 4, 2016
592016
GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNxas Gate Dielectric
M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen
IEEE Electron Device Letters 36 (5), 448-450, 2015
532015
GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNxas Gate Dielectric
M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen
IEEE Electron Device Letters 36 (5), 448-450, 2015
532015
O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors
S Huang, X Liu, K Wei, G Liu, X Wang, B Sun, X Yang, B Shen, C Liu, ...
Applied Physics Letters 106 (3), 033507, 2015
462015
Low on-resistance normally-off GaN double-channel metal¡Voxide¡Vsemiconductor high-electron-mobility transistor
J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
IEEE Electron Device Letters 36 (12), 1287-1290, 2015
452015
Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer
M Hua, J Wei, G Tang, Z Zhang, Q Qian, X Cai, N Wang, KJ Chen
IEEE Electron Device Letters 38 (7), 929-932, 2017
292017
Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015
282015
Improved gate dielectric deposition and enhanced electrical stability for single-layer MoS 2 MOSFET with an AlN interfacial layer
Q Qian, B Li, M Hua, Z Zhang, F Lan, Y Xu, R Yan, KJ Chen
Scientific reports 6 (1), 1-9, 2016
262016
Enhanced dielectric deposition on single-layer MoS2 with low damage using remote N2 plasma treatment
Q Qian, Z Zhang, M Hua, G Tang, J Lei, F Lan, Y Xu, R Yan, KJ Chen
Nanotechnology 28 (17), 175202, 2017
192017
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs
J Wei, R Xie, H Xu, H Wang, Y Wang, M Hua, K Zhong, G Tang, J He, ...
IEEE Electron Device Letters 40 (4), 526-529, 2019
172019
650-V double-channel lateral Schottky barrier diode with dual-recess gated anode
J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen
IEEE Electron Device Letters 39 (2), 260-263, 2017
162017
Compatibility of AlN/SiNxPassivation With LPCVD-SiNxGate Dielectric in GaN-Based MIS-HEMT
M Hua, Y Lu, S Liu, C Liu, K Fu, Y Cai, B Zhang, KJ Chen
IEEE Electron Device Letters 37 (3), 265-268, 2016
162016
Dynamic of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination
G Tang, J Wei, Z Zhang, X Tang, M Hua, H Wang, KJ Chen
IEEE Electron Device Letters 38 (7), 937-940, 2017
132017
Performance andVTHStability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNxGate Dielectric ¡K
J He, M Hua, Z Zhang, KJ Chen
IEEE Transactions on Electron Devices 65 (8), 3185-3191, 2018
122018
Gate stack engineering for GaN lateral power transistors
S Yang, S Liu, C Liu, M Hua, KJ Chen
Semiconductor Science and Technology 31 (2), 024001, 2015
122015
An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss
J Lei, J Wei, G Tang, Q Qian, M Hua, Z Zhang, Z Zheng, KJ Chen
2017 IEEE International Electron Devices Meeting (IEDM), 25.2. 1-25.2. 4, 2017
102017
Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs
M Hua, J Wei, Q Bao, J He, Z Zhang, Z Zheng, J Lei, KJ Chen
2017 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2017
102017
Dependence of Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET
M Hua, J Wei, Q Bao, Z Zhang, Z Zheng, KJ Chen
IEEE Electron Device Letters 39 (3), 413-416, 2018
92018
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