| Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor CY Wang, SJ Liang, S Wang, P Wang, Z Li, Z Wang, A Gao, C Pan, C Liu, ... Science Advances 6 (26), eaba6173, 2020 | 241 | 2020 |
| Strain‐sensitive magnetization reversal of a van der Waals magnet Y Wang, C Wang, SJ Liang, Z Ma, K Xu, X Liu, L Zhang, AS Admasu, ... Advanced Materials 32 (42), 2004533, 2020 | 140 | 2020 |
| Pressure‐tunable ambipolar conduction and hysteresis in thin palladium diselenide field effect transistors A Di Bartolomeo, A Pelella, X Liu, F Miao, M Passacantando, F Giubileo, ... Advanced Functional Materials 29 (29), 1902483, 2019 | 118 | 2019 |
| Networking retinomorphic sensor with memristive crossbar for brain-inspired visual perception S Wang, CY Wang, P Wang, C Wang, ZA Li, C Pan, Y Dai, A Gao, C Liu, ... National science review 8 (2), nwaa172, 2021 | 108 | 2021 |
| Room-temperature valleytronic transistor L Li, L Shao, X Liu, A Gao, H Wang, B Zheng, G Hou, K Shehzad, L Yu, ... Nature nanotechnology 15 (9), 743-749, 2020 | 102 | 2020 |
| Gate-Induced Interfacial Superconductivity in 1T-SnSe2 J Zeng, E Liu, Y Fu, Z Chen, C Pan, C Wang, M Wang, Y Wang, K Xu, ... Nano letters 18 (2), 1410-1415, 2018 | 99 | 2018 |
| Low‐Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning S Hao, J Zeng, T Xu, X Cong, C Wang, C Wu, Y Wang, X Liu, T Cao, G Su, ... Advanced Functional Materials 28 (36), 1803746, 2018 | 81 | 2018 |
| Experimental identification of critical condition for drastically enhancing thermoelectric power factor of two-dimensional layered materials J Zeng, X He, SJ Liang, E Liu, Y Sun, C Pan, Y Wang, T Cao, X Liu, ... Nano Letters 18 (12), 7538-7545, 2018 | 79 | 2018 |
| Field Emission in Ultrathin PdSe2 Back‐Gated Transistors A Di Bartolomeo, A Pelella, F Urban, A Grillo, L Iemmo, M Passacantando, ... Advanced Electronic Materials 6 (7), 2000094, 2020 | 75 | 2020 |
| Direct Evidence for Charge Compensation-Induced Large Magnetoresistance in Thin WTe2 Y Wang, L Wang, X Liu, H Wu, P Wang, D Yan, B Cheng, Y Shi, ... Nano letters 19 (6), 3969-3975, 2019 | 50 | 2019 |
| Electron irradiation of multilayer PdSe2 field effect transistors A Di Bartolomeo, F Urban, A Pelella, A Grillo, M Passacantando, X Liu, ... Nanotechnology 31 (37), 375204, 2020 | 35 | 2020 |
| Gate-tunable weak antilocalization in a few-layer InSe J Zeng, SJ Liang, A Gao, Y Wang, C Pan, C Wu, E Liu, L Zhang, T Cao, ... Physical Review B 98 (12), 125414, 2018 | 32 | 2018 |
| Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping Y Fu, M Long, A Gao, Y Wang, C Pan, X Liu, J Zeng, K Xu, L Zhang, E Liu, ... Applied Physics Letters 111 (4), 2017 | 30 | 2017 |
| Edge‐Epitaxial Growth of InSe Nanowires toward High‐Performance Photodetectors S Hao, S Yan, Y Wang, T Xu, H Zhang, X Cong, L Li, X Liu, T Cao, A Gao, ... Small 16 (4), 1905902, 2020 | 23 | 2020 |
| Temperature-sensitive spatial distribution of defects in flakes X Liu, Y Wang, Q Guo, SJ Liang, T Xu, B Liu, J Qiao, S Lai, J Zeng, S Hao, ... Physical Review Materials 5 (4), L041001, 2021 | 12 | 2021 |
| Low-lying electronic states with giant linear dichroic ratio observed in C Gu, X Liu, C Chen, A Liang, W Guo, X Yang, J Zhou, C Jozwiak, ... Physical Review B 106 (12), L121110, 2022 | 2 | 2022 |
| On-device phase engineering X Liu, J Shan, T Cao, L Zhu, J Ma, G Wang, Z Shi, Q Yang, M Ma, Z Liu, ... Nature Materials, 1-7, 2024 | | 2024 |
| Giant coercivity in single crystal Ta3FeS6 film L Xiao-Wei, X Jun-Lin, W Li-Zheng, L Shi-Jun, C Bin, M Feng ACTA PHYSICA SINICA 71 (12), 2022 | | 2022 |
