| Negative capacitance field effect transistor with hysteresis-free sub-60-mV/decade switching J Jo, C Shin IEEE Electron Device Letters 37 (3), 245-248, 2016 | 227 | 2016 |
| Negative capacitance in organic/ferroelectric capacitor to implement steep switching MOS devices J Jo, WY Choi, JD Park, JW Shim, HY Yu, C Shin Nano letters 15 (7), 4553-4556, 2015 | 198 | 2015 |
| Impact of temperature on negative capacitance field‐effect transistor J Jo, C Shin Electronics Letters 51 (1), 106-108, 2015 | 50 | 2015 |
| Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2−xInterfacial Layer to Metal/Ge Contact GS Kim, JK Kim, SH Kim, J Jo, C Shin, JH Park, KC Saraswat, HY Yu IEEE Electron Device Letters 35 (11), 1076-1078, 2014 | 41 | 2014 |
| Experimental observation of voltage amplification using negative capacitance for sub-60 mV/decade CMOS devices J Jo, C Shin Current Applied Physics 15 (3), 352-355, 2015 | 34 | 2015 |
| Plasma-enhanced atomic layer deposition of p-type copper oxide semiconductors with tunable phase, oxidation state, and morphology JD Lenef, J Jo, O Trejo, DJ Mandia, RL Peterson, NP Dasgupta The Journal of Physical Chemistry C 125 (17), 9383-9390, 2021 | 24 | 2021 |
| Causes of the Difference Between Hall Mobility and Field-Effect Mobility for p-Type RF Sputtered Cu₂O Thin-Film Transistors J Jo, JD Lenef, K Mashooq, O Trejo, NP Dasgupta, RL Peterson IEEE Transactions on Electron Devices 67 (12), 5557-5563, 2020 | 22 | 2020 |
| Experimental and theoretical study of hole scattering in RF sputtered p-type Cu2O thin films J Jo, Z Deng, N Sanders, E Kioupakis, RL Peterson Applied Physics Letters 120 (11), 2022 | 8 | 2022 |
| Transconductance amplification by the negative capacitance in ferroelectric-gated P3HT thin-film transistor J Jo, MG Kim, H Lee, H Choi, C Shin IEEE Transactions on Electron Devices 64 (12), 4974-4979, 2017 | 8 | 2017 |
| Capacitance matching effects in negative capacitnace field effect transistor J Jo, AI Khan, K Cho, S Oh, S Salahuddin, C Shin 2016 IEEE Silicon Nanoelectronics Workshop (SNW), 174-175, 2016 | 8 | 2016 |
| Study of temperature effects on negative capacitance field-effect transistor J Jo, C Shin IEEK 37, 70-72, 2014 | 8 | 2014 |
| Extraction of SnO subbandgap defect density by numerical modeling of p-type TFTs K Mashooq, J Jo, RL Peterson IEEE Transactions on Electron Devices 69 (5), 2436-2442, 2022 | 6 | 2022 |
| Worst case sampling method with confidence ellipse for estimating the impact of random variation on static random access memory (SRAM) S Oh, J Jo, H Lee, GS Lee, JD Park, C Shin JSTS: Journal of Semiconductor Technology and Science 15 (3), 374-380, 2015 | 5 | 2015 |
| Demonstration and analysis of ambipolar SnO inverter with high gain K Mashooq, J Jo, RL Peterson Applied Physics Letters 122 (1), 2023 | 3 | 2023 |
| Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance K Cho, J Jo, C Shin IEICE Transactions on Electronics 99 (5), 544-546, 2016 | 1 | 2016 |
| Effect of Metal Capping Layer in Achieving Record High p-Type SnO Thin Film Transistor Mobility K Mashooq, J Jo, RL Peterson IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Tunable Sulfur Incorporation into Atomic Layer Deposition Films Using Solution Anion Exchange JD Lenef, AJ Gayle, J Jo, KM Fuelling, SK Yadavalli, AM Ortiz-Ortiz, K Sun, ... Chemistry of Materials 35 (6), 2503-2517, 2023 | | 2023 |
| Investigation of p-type Oxide Semiconductor Thin Film Transistors for Complementary Metal Oxide Semiconductor Technologies J Jo | | 2022 |
| Layout engineering to suppress hysteresis of negative capacitance FinFET E Ko, J Jo, C Shin, BY Nguyen 2017 IEEE International Conference on IC Design and Technology (ICICDT), 1-3, 2017 | | 2017 |
| Experimental Observation of Negative Capacitance in Organic/Ferroelectric Capacitor for Steep Switching MOSFET Y Lee, J Jo, K Cho, S Oh, JD Park, C Shin Journal of Nanoscience and Nanotechnology 17 (5), 3469-3471, 2017 | | 2017 |
Changhwan ShinProfessor at Korea University在 korea.ac.kr 的電子郵件地址已通過驗證
