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Alireza Kashir
Alireza Kashir
Senior Engineer at Ferroelectric Memory GmbH
Verified email at ferroelectric-memory.com - Homepage
Title
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Cited by
Year
Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
W Banerjee, A Kashir, S Kamba
Small, 2022
912022
Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering
A Kashir, H Kim, S Oh, H Hwang
ACS Applied Electronic Materials 3 (2), 629-638, 2021
902021
Defect Engineering to Achieve Wake‐up Free HfO2‐Based Ferroelectrics
A Kashir, S Oh, H Hwang
Advanced Engineering Materials 2000791, 1-8, 2020
592020
Effect of dead layers on the ferroelectric property of ultrathin HfZrOx film
S Oh, H Kim, A Kashir, H Hwang
Applied Physics Letters 117 (25), 252906, 2020
432020
High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer
M Yadav, A Kashir, S Oh, RD Nikam, H Kim, H Jang, H Hwang
Nanotechnology 33, 085206, 2021
292021
Ferroelectric and Dielectric Properties of Hf0.5Zr0.5O2 Thin Film Near Morphotropic Phase Boundary
A Kashir, H Hwang
physica status solidi (a) 218 (8), 2000819, 2021
242021
A new approach to achieving strong ferroelectric properties in TiN/Hf0.5Zr0.5O2/TiN devices
H Kim, A Kashir, S Oh, H Hwang
Nanotechnology 32 (5), 055703, 2020
222020
Towards an Ideal High-κ HfO2-ZrO2-based Dielectric
A Kashir, MG Farahani, H Hwang
Nanoscale 13, 13631, 2021
202021
Dielectric properties of strained Nickel Oxide thin films
A Kashir, HW Jeong, GH Lee, P Mikheenko, YH Jeong
Journal of the Korean Physical Society 74 (10), 984-988, 2019
172019
A CMOS-compatible morphotropic phase boundary
A Kashir, H Hwang
Nanotechnology 32, 445706, 2021
142021
Hf1-xZrxO2/ZrO2 nanolaminate thin film as a high-κ dielectric
A Kashir, M Ghiasabadi Farahani, S Kamba, M Yadav, H Hwang
ACS Applied Electronic Materials 3 (12), 5632–5640, 2021
122021
Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device
H Kim, A Kashir, S Oh, H Jang, H Hwang
Nanotechnology 32, 315712, 2021
112021
Pulsed laser deposition of rocksalt magnetic binary oxides
A Kashir, HW Jeong, GH Lee, P Mikheenko, YH Jeong
Thin Solid Films 692, 137606, 2019
82019
A thin film perspective on quantum functional oxides
A Biswas, M Talha, A Kashir, YH Jeong
Current Applied Physics 19 (3), 207-214, 2018
82018
Strain-induced increase of dielectric constant in EuO thin film
A Kashir, HW Jeong, W Jung, YH Jeong, GH Lee
Materials Research Express 6 (10), 106321, 2019
72019
A Grease for Domain Walls Motion in HfO2-based Ferroelectrics
A Kashir, M Ghiasabadi Farahani, J Lancok, H Hwang, S Kamba
Nanotechnology, 2021
62021
Improvement of endurance and switching speed in Hf1-xZrxO2 Thin films using a Nanolaminate Structure
H Jang, A Kashir, S Oh, H Hwang
Nanotechnology, 2022
32022
Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf0.5Zr0.5O2/TiN device
H Kim, A Kashir, H Jang, S Oh, M Yadav, S Lee, H Hwang
Nano Express, 2022
32022
Spin-phonon interaction increased by compressive strain in antiferromagnetic MnO thin films
A Kashir, V Goian, O Pacherová, M Savinov, YH Jeong, GH Lee, S Kamba
Journal of Physics: Condensed Matter 32, 175402, 2020
32020
Strain effect on magnetic-exchange-induced phonon splitting in NiO films
A Kashir, V Goian, D Yoon, C Byeong-Gwan, YH Jeong, L Gil-Ho, ...
Journal of Physics: Condensed Matter 32, 405607, 2020
22020
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Articles 1–20