Zhaofu ZHANG
Zhaofu ZHANG
University of Cambridge, Hong Kong University of Science and Technology, Nankai University
Verified email at cam.ac.uk
Title
Cited by
Cited by
Year
Integration of LPCVD-SiNxgate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime
M Hua, Z Zhang, J Wei, J Lei, G Tang, K Fu, Y Cai, B Zhang, KJ Chen
2016 IEEE International Electron Devices Meeting (IEDM), 10.4. 1-10.4. 4, 2016
622016
Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment
Z Zhang, Q Qian, B Li, KJ Chen
ACS Appl. Mater. Interfaces 10 (20), 17419-17426, 2018
572018
Low on-resistance normally-off GaN double-channel metal-oxide-semiconductor high-electron-mobility transistor
J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
IEEE Electron Device Letters 36 (12), 1287-1290, 2015
482015
Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer
M Hua, J Wei, G Tang, Z Zhang, Q Qian, X Cai, N Wang, KJ Chen
IEEE Electron Device Letters 38 (7), 929-932, 2017
342017
Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015
302015
Improved gate dielectric deposition and enhanced electrical stability for single-layer MoS 2 MOSFET with an AlN interfacial layer
Q Qian, B Li, M Hua, Z Zhang, F Lan, Y Xu, R Yan, KJ Chen
Scientific reports 6 (1), 1-9, 2016
282016
High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure
S Huang, X Liu, X Wang, X Kang, J Zhang, Q Bao, K Wei, Y Zheng, ...
IEEE Electron Device Letters 37 (12), 1617-1620, 2016
272016
Enhanced dielectric deposition on single-layer MoS2 with low damage using remote N2 plasma treatment
Q Qian, Z Zhang, M Hua, G Tang, J Lei, F Lan, Y Xu, R Yan, KJ Chen
Nanotechnology 28 (17), 175202, 2017
202017
650-V Double-Channel Lateral Schottky Barrier Diode with Dual-Recess Gated Anode
J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ and Chen
IEEE Electron Device Letters 39 (2), 260-263, 2017
192017
High-speed, high-reliability GaN power device with integrated gate driver
G Tang, MH Kwan, Z Zhang, J He, J Lei, RY Su, FW Yao, YM Lin, JL Yu, ...
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
182018
Dynamic of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination
G Tang, J Wei, Z Zhang, X Tang, M Hua, H Wang, KJ Chen
IEEE Electron Device Letters 38 (7), 937-940, 2017
182017
Performance andVTHStability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNxGate Dielectric …
J He, M Hua, Z Zhang, KJ Chen
IEEE Transactions on Electron Devices 65 (8), 3185-3191, 2018
152018
Structure, electronic and magnetic properties of hexagonal boron nitride sheets doped by 5d transition metal atoms: First-principles calculations and molecular orbital analysis
Z Zhang, Z Geng, D Cai, T Pan, Y Chen, L Dong, T Zhou
Physica E: Low-dimensional Systems and Nanostructures 65, 24-29, 2015
142015
First-principles calculations of 5d atoms doped hexagonal-AlN sheets: Geometry, magnetic property and the influence of symmetry and symmetry-breaking on the electronic structure
ZF Zhang, TG Zhou, HY Zhao, XL Wei
Chinese Physics B 23 (1), 016801, 2013
132013
Characterization of static and dynamic behaviors in AlGaN/GaN-on-Si power transistors with photonic-ohmic drain
X Tang, B Li, Z Zhang, G Tang, J Wei, KJ Chen
IEEE Transactions on Electron Devices 63 (7), 2831-2837, 2016
122016
GaN as an Interfacial Passivation Layer: Tuning Band Offset and Removing Fermi Level Pinning for III–V MOS Devices
Z Zhang, R Cao, C Wang, HB Li, H Dong, W Wang, F Lu, Y Cheng, X Xie, ...
ACS Applied Materials & Interfaces 7 (9), 5141-5149, 2015
122015
Dependence of VTH Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET
M Hua, J Wei, Q Bao, Z Zhang, Z Zheng, KJ and Chen
IEEE Electron Device Letters 39 (3), 413-416, 2018
112018
An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss
J Lei, J Wei, G Tang, Q Qian, M Hua, Z Zhang, Z Zheng, KJ Chen
2017 IEEE International Electron Devices Meeting (IEDM), 25.2. 1-25.2. 4, 2017
112017
Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs
M Hua, J Wei, Q Bao, J He, Z Zhang, Z Zheng, J Lei, KJ Chen
2017 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2017
102017
In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study
Q Qian, Z Zhang, KJ and Chen
Langmuir 34 (8), 2882–2889, 2018
92018
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