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Mayur Chaudhary
Mayur Chaudhary
Postdoctral Researcher, National Tsinghua University
Verified email at gapp.nthu.edu.tw
Title
Cited by
Cited by
Year
Gamma-ray engineered surface defects on zinc oxide nanorods towards enhanced NO2 gas sensing performance at room temperature
A kumar Anbalagan, S Gupta, RR Kumar, AR Tripathy, M Chaudhary, ...
Sensors and Actuators B: Chemical 369, 132255, 2022
122022
Influence of gamma-ray irradiation and post-annealing studies on pentacene films: the anisotropic effects on structural and electronic properties
A kumar Anbalagan, CY Jao, M Syabriyana, CL Fan, S Gupta, ...
RSC advances 10 (36), 21092-21099, 2020
112020
Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS2 Sputtered Few-Layered Thin Films
AK Anbalagan, FC Hu, WK Chan, AC Gandhi, S Gupta, M Chaudhary, ...
ACS nano 17 (7), 6555-6564, 2023
102023
Consequences of gamma-ray irradiation on structural and electronic properties of PEDOT: PSS polymer in air and vacuum environments
A kumar Anbalagan, S Gupta, M Chaudhary, RR Kumar, YL Chueh, ...
RSC advances 11 (34), 20752-20759, 2021
72021
Rational Design on Controllable Cation Injection with Improved Conductive-Bridge Random Access Memory by Glancing Angle Deposition Technology toward Neuromorphic Application
YC Shih, YC Shen, YK Cheng, M Chaudhary, TY Yang, YJ Yu, YL Chueh
ACS Applied Materials & Interfaces 13 (46), 55470-55480, 2021
32021
Phase/Interfacial-Engineered Two-Dimensional-Layered WSe2 Films by a Plasma-Assisted Selenization Process: Modulation of Oxygen Vacancies in Resistive …
M Chaudhary, YC Shih, SY Tang, TY Yang, TW Kuo, CC Chung, YC Shen, ...
ACS Applied Materials & Interfaces 15 (28), 33858-33867, 2023
22023
Emulating Neuromorphic and In‐Memory Computing Utilizing Defect Engineering in 2D‐Layered WSeOx and WSe2 Thin Films by Plasma‐Assisted Selenization Process
M Chaudhary, TY Yang, CT Chen, PC Lai, YC Hsu, YR Peng, A Kumar, ...
Advanced Functional Materials, 2303697, 2023
22023
Design of Mixed-Dimensional QDs/MoS2/TiO2 Heterostructured Resistive Random-Access Memory with Interfacial Analog Switching Characteristics for Potential …
SY Tang, YC Shih, YC Shen, RH Cyu, CT Chen, TY Yang, M Chaudhary, ...
ACS Applied Electronic Materials 6 (3), 1581-1589, 2024
12024
Enhanced Electrical Transport Properties of Molybdenum Disulfide Field-Effect Transistors by Using Alkali Metal Fluorides as Dielectric Capping Layers
SS Wani, CC Hsu, YZ Kuo, KMM Darshana Kumara Kimbulapitiya, ...
ACS nano, 2024
2024
Figure-of-Merit in 2D Insulators Pertaining to the Thermokinetics of Hexagonal Boron Nitride via Atmospheric-Pressure Chemical Vapor Deposition (APCVD) on Cu: Origin and Scenario
HUP Nguyen, SS Wani, RH Cyu, B Rehman, M Chaudhary, TY Yang, ...
Chemistry of Materials 36 (6), 2721-2734, 2024
2024
Design of Electrocatalytic Janus WSeS/WSe2 Heterostructure Nanowall Electrodes with High Selectivity and Faradaic Efficiency for Nitrogen Reduction (Adv …
YR Peng, SY Tang, TY Yang, PA Sino, YC Chen, M Chaudhary, CT Chen, ...
Advanced Energy Materials 13 (46), 2370187, 2023
2023
Dual Threshold and Memory Switching Induced By Conducting Filament Morphology in Ag/WSe2 Based ECM Cell
M Chaudhary, YL Chueh
Electrochemical Society Meeting Abstracts 242, 1334-1334, 2022
2022
Design of High-Performance Rram through Interfacial Engineering Toward Neuromorphic Application by Low-Temperature Plasma Selenization Process
M Chaudhary, YC Shih, SY Tang, Y Chen, YL Chueh
Electrochemical Society Meeting Abstracts 240, 976-976, 2021
2021
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