Follow
changze liu
changze liu
Verified email at samsung.com
Title
Cited by
Cited by
Year
HXMT identification of a non-thermal X-ray burst from SGR J1935+ 2154 and with FRB 200428
CK Li, L Lin, SL Xiong, MY Ge, XB Li, TP Li, FJ Lu, SN Zhang, YL Tuo, ...
Nature Astronomy 5 (4), 378-384, 2021
2152021
Randomized sham-controlled trial of navigated repetitive transcranial magnetic stimulation for motor recovery in stroke
RL Harvey, D Edwards, K Dunning, F Fregni, J Stein, J Laine, LM Rogers, ...
Stroke, 2018
1362018
Hot carrier reliability characterization in consideration of self-heating in FinFET technology
M Jin, C Liu, J Kim, J Kim, S Choo, Y Kim, H Shim, L Zhang, K Nam, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 2A-2-1-2A-2-5, 2016
782016
Evaluation of ENTLN performance characteristics based on the ground truth natural and rocket‐triggered lightning data acquired in Florida
Y Zhu, VA Rakov, MD Tran, MG Stock, S Heckman, C Liu, CD Sloop, ...
Journal of Geophysical Research: Atmospheres 122 (18), 9858-9866, 2017
752017
Comparison of interfacial reactions of Ni and Ni–P in extended contact with liquid Sn–Bi-based solders
JF Li, SH Mannan, MP Clode, K Chen, DC Whalley, C Liu, DA Hutt
Acta Materialia 55 (2), 737-752, 2007
672007
UMass Boston comprehensive demographic questionnaire, revised
KL Suyemoto, SM Erisman, DW Holowka, C Fuchs, H Barrett-Model, F Ng, ...
Appendix in Wadsworth, LP, Morgan, LP, Hayes-Skelton, SA, Roemer, L …, 2016
632016
Direct trifluoromethylthiolation reactions involving radical processes
AL Barthelemy, E Magnier, G Dagousset
Synthesis 50 (24), 4765-4776, 2018
592018
New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability
Z Yu, J Zhang, R Wang, S Guo, C Liu, R Huang
2017 IEEE International Electron Devices Meeting (IEDM), 7.2. 1-7.2. 4, 2017
592017
Hot disc of the Swift J0243.6+6124 revealed by Insight-HXMT
V Doroshenko, SN Zhang, A Santangelo, L Ji, S Tsygankov, A Mushtukov, ...
Monthly Notices of the Royal Astronomical Society 491 (2), 1857-1867, 2020
552020
Systematical study of 14nm FinFET reliability: From device level stress to product HTOL
C Liu, HC Sagong, H Kim, S Choo, H Lee, Y Kim, H Kim, B Jo, M Jin, ...
2015 IEEE International Reliability Physics Symposium, 2F. 3.1-2F. 3.5, 2015
462015
An evaluation of gravity waves and gravity wave sources in the Southern Hemisphere in a 7 km global climate simulation
LA Holt, MJ Alexander, L Coy, C Liu, A Molod, W Putman, S Pawson
Quarterly Journal of the Royal Meteorological Society 143 (707), 2481-2495, 2017
442017
New insights into AC RTN in scaled high-к/metal-gate MOSFETs under digital circuit operations
J Zou, R Wang, N Gong, R Huang, X Xu, J Ou, C Liu, J Wang, J Liu, J Wu, ...
2012 Symposium on VLSI Technology (VLSIT), 139-140, 2012
432012
The insight-HXMT mission and its recent progresses
S Zhang, SN Zhang, FJ Lu, TP Li, LM Song, YP Xu, HY Wang, JL Qu, ...
Space Telescopes and Instrumentation 2018: Ultraviolet to Gamma Ray 10699 …, 2018
402018
In-orbit demonstration of X-ray pulsar navigation with the Insight-HXMT satellite
SJ Zheng, SN Zhang, FJ Lu, WB Wang, Y Gao, TP Li, LM Song, MY Ge, ...
The astrophysical journal supplement series 244 (1), 1, 2019
362019
Experimental study on quasi-ballistic transport in silicon nanowire transistors and the impact of self-heating effects
R Wang, J Zhuge, C Liu, R Huang, DW Kim, D Park, Y Wang
2008 IEEE International Electron Devices Meeting, 1-4, 2008
352008
Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance
M Jin, C Liu, J Kim, J Kim, H Shim, K Kim, G Kim, S Lee, T Uemura, ...
2016 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2016
342016
A unified approach for trap-aware device/circuit co-design in nanoscale CMOS technology
R Wang, M Luo, S Guo, R Huang, C Liu, J Zou, J Wang, J Wu, N Xu, ...
2013 IEEE International Electron Devices Meeting, 33.5. 1-33.5. 4, 2013
342013
Considering physical mechanisms and geometry dependencies in 14nm FinFET circuit aging and product validations
SW Pae, HC Sagong, C Liu, MJ Jin, YH Kim, SJ Choo, JJ Kim, HJ Kim, ...
2015 IEEE International Electron Devices Meeting (IEDM), 20.6. 1-20.6. 4, 2015
332015
New observations on complex RTN in scaled high-κ/metal-gate MOSFETs—The role of defect coupling under DC/AC condition
P Ren, P Hao, C Liu, R Wang, X Jiang, Y Qiu, R Huang, S Guo, M Luo, ...
2013 IEEE International Electron Devices Meeting, 31.4. 1-31.4. 4, 2013
332013
Weak linkage between the heaviest rainfall and tallest storms. Nat. Commun., 6, 6213
A Hamada, YN Takayabu, C Liu, EJ Zipser
322015
The system can't perform the operation now. Try again later.
Articles 1–20