Follow
Yeongil Noh
Yeongil Noh
Samsung Display Co., Ltd.
Verified email at samsung.com
Title
Cited by
Cited by
Year
The validation study of the body shape questionnaire (BSQ) in female university students
YK Noh, BW Kim
The Korea Journal of Counseling 6 (4), 1163-1174, 2005
172005
Predictive control of the plasma processes in the OLED display mass production referring to the discontinuity qualifying PI-VM
S Park, Y Jang, T Cha, Y Noh, Y Choi, J Lee, J Seong, B Kim, T Cho, ...
Physics of Plasmas 27 (8), 2020
122020
Application of PI-VM for management of the metal target plasma etching processes in OLED display manufacturing
S Park, T Cho, Y Jang, Y Noh, Y Choi, T Cha, J Lee, B Kim, JH Yang, ...
Plasma Physics and Controlled Fusion 61 (1), 014032, 2018
112018
Cause analysis of the faults in HARC etching processes by using the PI‐VM model for OLED display manufacturing
S Park, Y Kyung, J Lee, Y Jang, T Cha, Y Noh, Y Choi, B Kim, T Cho, ...
Plasma Processes and Polymers 16 (9), 1900030, 2019
102019
Plasma information-based virtual metrology (PI-VM) and mass production process control
S Park, J Seong, Y Jang, HJ Roh, JW Kwon, J Lee, S Ryu, J Song, ...
Journal of the Korean Physical Society 80 (8), 647-669, 2022
82022
Welding behavior between Zn-coated steel plate and free cutting carbon steel rod by Nd: YAG laser beam
YT Noh, BC Kim
Journal of KSLP 4, 30-39, 2001
72001
Micro-range uniformity control of the etching profile in the OLED display mass production referring to the PI-VM model
S Park, J Seong, Y Noh, Y Park, Y Jang, T Cho, JH Yang, GH Kim
Physics of Plasmas 28 (10), 2021
52021
Data-driven plasma science based plasma etching process design in OLED mass production referring to PI-VM
S Park, J Seong, Y Park, Y Noh, H Lee, N Bae, KB Roh, R Seo, B Song, ...
Plasma Physics and Controlled Fusion 66 (2), 025014, 2024
2024
PI (Plasma Information) 인자 모니터링을 통한 dry etch process chamber 상태 정량화 및 공정제어 알고리즘 기반 연구
장용석, 노연길, 차태원, 이주영, 박설혜
한국진공학회 학술발표회초록집, 181-181, 2018
2018
The system can't perform the operation now. Try again later.
Articles 1–9