| Investigation of dry-etch-induced defects in> 600 V regrown, vertical, GaN, pn diodes using deep-level optical spectroscopy GW Pickrell, AM Armstrong, AA Allerman, MH Crawford, CE Glaser, ... Journal of Applied Physics 126 (14), 2019 | 20 | 2019 |
| Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current GW Pickrell, AM Armstrong, AA Allerman, MH Crawford, KC Cross, ... Journal of Electronic Materials 48, 3311-3316, 2019 | 17 | 2019 |
| Etched and regrown vertical GaN junction barrier Schottky diodes AT Binder, GW Pickrell, AA Allerman, JR Dickerson, L Yates, J Steinfeldt, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 10 | 2021 |
| High voltage GaN p‐n diodes formed by selective area regrowth AM Armstrong, GP Pickrell, AA Allerman, MH Crawford, CE Glaser, ... Electronics Letters 56 (4), 207-209, 2020 | 9 | 2020 |
| Thermal Annealing of Gold Thin Films on the Structure and Surface Morphology Using RF Magnetron Sputtering M Syed, C Glaser, C Hynes, M Syed J. Mater. Sci. Eng. B 8, 66-76, 2018 | 7 | 2018 |
| Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage AM Armstrong, AA Allerman, GW Pickrell, MH Crawford, CE Glaser, ... IEEE Journal of the Electron Devices Society 9, 318-323, 2021 | 3 | 2021 |
| Surface Morphology of Gold Thin Films using RF Magnetron Sputtering M Syed, G Caleb, M Syed Proceedings of the 60th Annual Technical Conference, SVC TechCon, Providence …, 2017 | 2 | 2017 |
| Optimization of Step-Etched Junction Termination Extensions for Vertical GaN Devices AT Binder, J Steinfeldt, AA Allerman, BD Rummel, C Glaser, L Yates, ... IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| Analysis of ALD Dielectric Leakage in Bulk GaN MOS Devices CE Glaser, AT Binder, L Yates, AA Allerman, DF Feezell, RJ Kaplar 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 1 | 2021 |
| Advanced GaN Device Technologies for Power Electronics. G Pickrell, A Armstrong, AA Allerman, MH Crawford, D Feezell, ... Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2018 | 1 | 2018 |
| (Invited) Advanced GaN Device Technologies for Power Electronics Applications GW Pickrell, AM Armstrong, AA Allerman, MH Crawford, D Feezell, ... Electrochemical Society Meeting Abstracts aimes2018, 1156-1156, 2018 | 1 | 2018 |
| Surface Charge Migration in SiC Power MOSFETs Induced by HVDC-H3TRB Testing BD Rummel, CE Glaser, RT Gurule, M Groves, AT Binder, R Floyd, ... 2024 IEEE International Reliability Physics Symposium (IRPS), P52. RT-1-P52 …, 2024 | | 2024 |
| (Invited) Advanced Design Concepts for Vertical Gallium Nitride MOSFETs AT Binder, J Steinfeldt, AA Allerman, CE Glaser, L Yates, R Floyd, ... Electrochemical Society Meeting Abstracts 244, 1679-1679, 2023 | | 2023 |
| (Invited) Recent Progress in Medium-Voltage Vertical GaN Power Devices L Yates, AT Binder, A Rice, AM Armstrong, J Steinfeldt, VM Abate, ... Electrochemical Society Meeting Abstracts 244, 1682-1682, 2023 | | 2023 |
| Etch Depth Study for Step-Etched Junction Termination Extensions in Vertical GaN Devices AT Binder, J Steinfeldt, AA Allerman, BD Rummel, C Glaser, L Yates, ... 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2023 | | 2023 |
| Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors BD Rummel, JA Cooper, DT Morisette, L Yates, CE Glaser, AT Binder, ... Journal of Applied Physics 134 (12), 2023 | | 2023 |
| Interface Trap State Analysis of Gate Dielectrics on Gallium Nitride and Silicon Carbide using a Novel Quasi-Static CV Technique. B Rummel, DT Morisette, JA Cooper, C Glaser, L Yates, A Binder, ... Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2022 | | 2022 |
| (Invited) Vertical Gallium Nitride Mosfets for Electric Drivetrains AT Binder, AA Allerman, CE Glaser, L Yates, BD Rummel, T Smith, ... Electrochemical Society Meeting Abstracts 242, 1361-1361, 2022 | | 2022 |
| Interface Trap Density Characterization of ALD Gate Dielectrics for GaN Power MOSFETs. C Glaser, B Rummel, A Binder, L Yates, A Allerman, D Feezell, R Kaplar Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2022 | | 2022 |
| Progress in Fabrication and Characterization of Vertical GaN Power Devices R Kaplar, A Binder, M Crawford, A Allerman, B Gunning, J Flicker, L Yates, ... Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2022 | | 2022 |
