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Kim, Gwang-Sik
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Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States
GS Kim, SH Kim, J Park, KH Han, J Kim, HY Yu
ACS nano 12 (6), 6292-6300, 2018
1072018
Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse
SG Kim, SH Kim, J Park, GS Kim, JH Park, KC Saraswat, J Kim, HY Yu
ACS nano 13 (9), 10294-10300, 2019
642019
Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2−xInterfacial Layer to Metal/Ge Contact
GS Kim, JK Kim, SH Kim, J Jo, C Shin, JH Park, KC Saraswat, HY Yu
IEEE Electron Device Letters 35 (11), 1076-1078, 2014
402014
Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack
GS Kim, SW Kim, SH Kim, J Park, Y Seo, BJ Cho, C Shin, JH Shim, HY Yu
ACS applied materials & interfaces 8 (51), 35419-35425, 2016
352016
Surface Passivation of Germanium Using SF6Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET
GS Kim, SH Kim, JK Kim, C Shin, JH Park, KC Saraswat, BJ Cho, HY Yu
IEEE Electron Device Letters 36 (8), 745-747, 2015
282015
Analytical study of interfacial layer doping effect on contact resistivity in metal-interfacial layer-Ge structure
JK Kim, GS Kim, C Shin, JH Park, KC Saraswat, HY Yu
IEEE Electron Device Letters 35 (7), 705-707, 2014
282014
The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances
JK Kim, GS Kim, H Nam, C Shin, JH Park, JK Kim, BJ Cho, KC Saraswat, ...
IEEE Electron Device Letters 35 (12), 1185-1187, 2014
232014
The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction
SW Kim, SH Kim, GS Kim, C Choi, R Choi, HY Yu
ACS applied materials & interfaces 8 (51), 35614-35620, 2016
222016
Asymmetrically contacted germanium photodiode using a metal–interlayer–semiconductor–metal structure for extremely large dark current suppression
HJ Zang, GS Kim, GJ Park, YS Choi, HY Yu
Optics Letters 41 (16), 3686-3689, 2016
192016
Fermi-Level Unpinning Using a Ge-Passivated Metal–Interlayer–Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors
SH Kim, GS Kim, JK Kim, JH Park, C Shin, C Choi, HY Yu
IEEE Electron Device Letters 36 (9), 884-886, 2015
172015
Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET With Metal–Interlayer–Semiconductor Source/Drain
C Shin, JK Kim, GS Kim, H Lee, C Shin, JK Kim, BJ Cho, HY Yu
IEEE Transactions on Electron Devices 63 (11), 4167-4172, 2016
162016
Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal–Interlayer–n-Germanium Source/Drain Structure
GS Kim, G Yoo, Y Seo, SH Kim, K Cho, BJ Cho, C Shin, JH Park, HY Yu
IEEE Electron Device Letters 37 (6), 709-712, 2016
152016
Fermi-Level Unpinning Technique with Excellent Thermal Stability for n-Type Germanium
GS Kim, SH Kim, TI Lee, BJ Cho, C Choi, C Shin, JH Shim, J Kim, HY Yu
ACS Applied Materials & Interfaces 9 (41), 35988-35997, 2017
142017
Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF 6 Plasma Treatment
SH Kim, GS Kim, SW Kim, JK Kim, C Choi, JH Park, R Choi, HY Yu
IEEE Electron Device Letters 37 (4), 373-376, 2016
142016
Schottky Barrier Height Modulation Using Interface Characteristics of MoS2 Interlayer for Contact Structure
SH Kim, KH Han, GS Kim, SG Kim, J Kim, HY Yu
ACS applied materials & interfaces 11 (6), 6230-6237, 2019
132019
Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior.
KH Han, GS Kim, J Park, SG Kim, JH Park, HY Yu
ACS applied materials & interfaces 11 (23), 20949-20955, 2019
112019
Schottky barrier height modulation of metal–interlayer–semiconductor structure depending on contact surface orientation for multi-gate transistors
GS Kim, TI Lee, BJ Cho, HY Yu
Applied Physics Letters 114 (1), 012102, 2019
62019
Contact Resistance Reduction Using Dielectric Materials of Nanoscale Thickness on Silicon for Monolithic 3D Integration
SH Kim, GS Kim, S Oh, JH Park, HY Yu
Journal of Nanoscience and Nanotechnology 16 (12), 12764-12767, 2016
62016
Effective Schottky barrier height lowering technique for InGaAs contact scheme: DMIGS and Dit reduction and interfacial dipole formation
SH Kim, GS Kim, SW Kim, HY Yu
Applied Surface Science 453, 48-55, 2018
52018
Effects of Metal–Interlayer–Semiconductor Source/Drain Contact Structure on n-Type Germanium Junctionless FinFETs
SG Jung, SH Kim, GS Kim, HY Yu
IEEE Transactions on Electron Devices 65 (8), 3136-3141, 2018
52018
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