| Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC J Rozen, S Dhar, ME Zvanut, JR Williams, LC Feldman Journal of Applied Physics 105 (12), 2009 | 209 | 2009 |
| Scaling between channel mobility and interface state density in SiC MOSFETs J Rozen, AC Ahyi, X Zhu, JR Williams, LC Feldman IEEE Transactions on Electron Devices 58 (11), 3808-3811, 2011 | 158 | 2011 |
| ECRAM as scalable synaptic cell for high-speed, low-power neuromorphic computing J Tang, D Bishop, S Kim, M Copel, T Gokmen, T Todorov, SH Shin, ... 2018 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2018 | 150 | 2018 |
| Two-dimensional current percolation in nanocrystalline vanadiumdioxide films J Rozen, R Lopez, RF Haglund, LC Feldman Applied Physics Letters 88 (8), 2006 | 146 | 2006 |
| IEEE International Electron Devices Meeting (IEDM) W Kim, T Todorov, M Onen, T Gokmen, D Bishop, P Solomon, KT Lee, ... San Francisco, CA, USA, 38.3, 2019 | 137 | 2019 |
| Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface J Rozen, S Dhar, SK Dixit, VV Afanas’ev, FO Roberts, HL Dang, S Wang, ... Journal of Applied Physics 103 (12), 2008 | 88 | 2008 |
| Phosphorous passivation of the SiO2/4H–SiC interface YK Sharma, AC Ahyi, T Issacs-Smith, X Shen, ST Pantelides, X Zhu, ... Solid-State Electronics, 2011 | 85 | 2011 |
| Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces AF Basile, J Rozen, JR Williams, LC Feldman, PM Mooney Journal of Applied Physics 109 (6), 2011 | 77 | 2011 |
| Metal-oxide based, CMOS-compatible ECRAM for deep learning accelerator S Kim, T Todorov, M Onen, T Gokmen, D Bishop, P Solomon, KT Lee, ... 2019 IEEE International Electron Devices Meeting (IEDM), 35.7. 1-35.7. 4, 2019 | 76 | 2019 |
| Pressure dependence of SiO2 growth kinetics and electrical properties on SiC EA Ray, J Rozen, S Dhar, LC Feldman, JR Williams Journal of Applied Physics 103 (2), 2008 | 71 | 2008 |
| Total Dose Radiation Response of Nitrided and Non-nitrided SiO/4H-SiC MOS Capacitors SK Dixit, S Dhar, J Rozen, S Wang, RD Schrimpf, DM Fleetwood, ... IEEE transactions on nuclear science 53 (6), 3687-3692, 2006 | 58 | 2006 |
| Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors JA Taillon, J Hyuk Yang, CA Ahyi, J Rozen, JR Williams, LC Feldman, ... Journal of Applied Physics 113 (4), 2013 | 45 | 2013 |
| High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With In-Situ O3 Treatment T Ando, P Hashemi, J Bruley, J Rozen, Y Ogawa, S Koswatta, KK Chan, ... IEEE Electron Device Letters 38 (3), 303-305, 2017 | 42 | 2017 |
| The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices X Zhu, AC Ahyi, M Li, Z Chen, J Rozen, LC Feldman, JR Williams Solid-state electronics 57 (1), 76-79, 2011 | 41 | 2011 |
| Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC J Rozen, S Dhar, ST Pantelides, LC Feldman, S Wang, JR Williams, ... Applied Physics Letters 91 (15), 2007 | 40 | 2007 |
| Binary metal oxide based interlayer for high mobility channels V Narayanan, Y Ogawa, J Rozen US Patent 9,972,695, 2018 | 37 | 2018 |
| Charge trapping properties of 3C-and 4H-SiC MOS capacitors with nitrided gate oxides R Arora, J Rozen, DM Fleetwood, KF Galloway, CX Zhang, J Han, ... Ieee transactions on nuclear science 56 (6), 3185-3191, 2009 | 33 | 2009 |
| Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT∼ 7Å and scaled dimensions down … P Hashemi, T Ando, K Balakrishnan, E Cartier, M Lofaro, JA Ott, J Bruley, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 25 | 2016 |
| Enhancing interface quality by gate dielectric deposition on a nitrogen-conditioned 4H–SiC surface J Rozen, M Nagano, H Tsuchida Journal of Materials Research 28 (1), 28-32, 2013 | 25 | 2013 |
| High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 µS/µm at VDD = 0.5 V Y Sun, A Majumdar, CW Cheng, RM Martin, RL Bruce, JB Yau, DB Farmer, ... 2014 IEEE International Electron Devices Meeting, 25.3. 1-25.3. 4, 2014 | 24 | 2014 |
Takashi AndoIBM T. J. Watson Research CenterVerified email at us.ibm.com
