Iddo Amit
Iddo Amit
Department of Engineering, Durham University
在 durham.ac.uk 的电子邮件经过验证
标题
引用次数
引用次数
年份
Ultrahigh Performance Nanoengineered Graphene–Concrete Composites for Multifunctional Applications
D Dimov, I Amit, O Gorrie, MD Barnes, NJ Townsend, AIS Neves, ...
Advanced Functional Materials 28 (23), 1705183, 2018
1062018
Contact Doping of Silicon Wafers and Nanostructures with Phosphine Oxide Monolayers
O Hazut, A Agarwala, I Amit, T Subramani, S Zaidiner, Y Rosenwaks, ...
ACS nano 6 (11), 10311-10318, 2012
552012
High-mobility and high-optical quality atomically thin WS 2
F Reale, P Palczynski, I Amit, GF Jones, JD Mehew, A Bacon, N Ni, ...
Scientific reports 7 (1), 1-10, 2017
512017
Spatially resolved correlation of active and total doping concentrations in VLS grown nanowires
I Amit, U Givan, JG Connell, DF Paul, JS Hammond, LJ Lauhon, ...
Nano letters 13 (6), 2598-2604, 2013
472013
Specific and label-free femtomolar biomarker detection with an electrostatically formed nanowire biosensor
G Shalev, G Landman, I Amit, Y Rosenwaks, I Levy
NPG Asia Materials 5 (3), e41-e41, 2013
472013
Role of charge traps in the performance of atomically thin transistors
I Amit, TJ Octon, NJ Townsend, F Reale, CD Wright, C Mattevi, ...
Advanced Materials 29 (19), 1605598, 2017
442017
Tunable diameter electrostatically formed nanowire for high sensitivity gas sensing
A Henning, N Swaminathan, A Godkin, G Shalev, I Amit, Y Rosenwaks
Nano Research 8 (7), 2206-2215, 2015
342015
Strain-engineered inverse charge-funnelling in layered semiconductors
A De Sanctis, I Amit, SP Hepplestone, MF Craciun, S Russo
Nature communications 9 (1), 1-7, 2018
332018
Barrier Height Measurement of Metal Contacts to Si Nanowires Using Internal Photoemission of Hot Carriers
KH Yoon, JK Hyun, JG Connell, I Amit, Y Rosenwaks, LJ Lauhon
Nano letters 13 (12), 6183-6188, 2013
332013
Laser-writable high-k dielectric for van der Waals nanoelectronics
N Peimyoo, MD Barnes, JD Mehew, A De Sanctis, I Amit, J Escolar, ...
Science Advances 5 (1), eaau0906, 2019
292019
Parallel p–n Junctions across Nanowires by One-Step Ex Situ Doping
O Hazut, BC Huang, A Pantzer, I Amit, Y Rosenwaks, A Kohn, CS Chang, ...
ACS nano 8 (8), 8357-8362, 2014
292014
Sub 20 meV Schottky barriers in metal/MoTe2 junctions
NJ Townsend, I Amit, MF Craciun, S Russo
2D Materials 5 (2), 025023, 2018
172018
Multiple state electrostatically formed nanowire transistors
G Segev, I Amit, A Godkin, A Henning, Y Rosenwaks
IEEE Electron Device Letters 36 (7), 651-653, 2015
152015
Multiple state electrostatically formed nanowire transistors
G Segev, I Amit, A Godkin, A Henning, Y Rosenwaks
IEEE Electron Device Letters 36 (7), 651-653, 2015
152015
Multiple state electrostatically formed nanowire transistors
G Segev, I Amit, A Godkin, A Henning, Y Rosenwaks
IEEE Electron Device Letters 36 (7), 651-653, 2015
152015
Multiple state electrostatically formed nanowire transistors
G Segev, I Amit, A Henning, Y Rosenwaks
US Patent 20170243983A1, 2015
152015
Density and Energy Distribution of Interface States in the Grain Boundaries of Polysilicon Nanowire
I Amit, D Englander, D Horvitz, Y Sasson, Y Rosenwaks
Nano letters 14 (11), 6190-6194, 2014
152014
Functionalised hexagonal-domain graphene for position-sensitive photodetectors
A De Sanctis, MD Barnes, I Amit, MF Craciun, S Russo
IOP Nanotechnology 28 (12), 124004, 2017
132017
Impact of Dopant Compensation on Graded pn Junctions in Si Nanowires
I Amit, N Jeon, LJ Lauhon, Y Rosenwaks
ACS applied materials & interfaces 8 (1), 128-134, 2016
92016
Potential barrier height at the grain boundaries of a poly-silicon nanowire
A Shamir, I Amit, D Englander, D Horvitz, Y Rosenwaks
Nanotechnology 26 (35), 355201, 2015
62015
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