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Cited by
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Since 2019
Citations
5
5
h-index
1
1
i10-index
0
0
0
2
1
2022
2023
2024
1
2
2
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VLSI CAD
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Year
Self-selective ferroelectric memory realized with semimetalic graphene channel
S Jung, J Park, J Kim, W Song, J Jo, H Park, M Kong, S Kang, M Sheeraz, ...
npj 2D Materials and Applications 5 (1), 90
, 2021
4
2021
GAN-dummy fill: timing-aware dummy fill method using GAN
M Kong, D Kim, M Kweon, S Kang
Proceedings of the Great Lakes Symposium on VLSI 2022, 177-181
, 2022
1
2022
Self-Selective Non-Destructive Read-Out for Ferroelectric Memory Based on Field Effect Transistor with Graphene Channel
S Jung, J Park, J Kim, W Song, J Jo, H Park, M Kong, S Kang, M Sheeraz, ...
한국물리학회
, 2022
2022
Semiconductor device layout and method for forming the same
K Myong, HJ Baek
US Patent 9,502,423
, 2016
2016
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