| Effect of thermal annealing on the optical and structural properties of (311) B and (001) GaAsBi/GaAs single quantum wells grown by MBE H Alghamdi, VO Gordo, M Schmidbauer, JF Felix, S Alhassan, A Alhassni, ... Journal of Applied Physics 127 (12), 2020 | 7 | 2020 |
| Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates H Alghamdi, A Alhassni, S Alhassan, A Almunyif, AV Klekovkin, IN Trunkin, ... Journal of Alloys and Compounds 905, 164015, 2022 | 6 | 2022 |
| Investigation of deep defects and their effects on the properties of NiO/β-Ga2O3 heterojuncion diodes A Almalki, L Madani, N Sengouga, S Alhassan, S Alotaibi, A Alhassni, ... Materials Today Electronics 4, 100042, 2023 | 5 | 2023 |
| The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure M Gunes, O Donmez, C Gumus, A Erol, H Alghamdi, S Alhassan, ... Physica B: Condensed Matter 602, 412487, 2021 | 4 | 2021 |
| Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1− xBix layers grown by Molecular Beam Epitaxy S Alhassan, D de Souza, A Alhassni, A Almunyif, S Alotaibi, A Almalki, ... Journal of Alloys and Compounds 885, 161019, 2021 | 3 | 2021 |
| Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy M Al Huwayz, HVA Galeti, OM Lemine, KH Ibnaouf, A Alkaoud, Y Alaskar, ... Journal of Luminescence 251, 119155, 2022 | 2 | 2022 |
| Dilute GaAs1− xBix epilayers with different bismuth concentrations grown by Molecular Beam Epitaxy: A promising candidate for gamma radiation sensor applications AA Alhassni, JF Felix, JFR Marroquin, S Alhassan, H Alghamdi, ... Applied Surface Science 636, 157787, 2023 | 1 | 2023 |
| Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures M Al Huwayz, DA Jameel, S Alotaibi, S Alhassan, A Almalki, N Al Saqri, ... Applied Physics A 129 (6), 405, 2023 | 1 | 2023 |
| Investigation of structural and optical properties of dilute GaAsBi and InGaAsBi semiconductor nanostructures grown by molecular beam epitaxy A Alhassni University of Nottingham, 2023 | | 2023 |
| Structural and optical properties of n-type and p-type GaAs (1− x) Bi x thin films grown by molecular beam epitaxy on (311) B GaAs substrates D De Souza, S Alhassan, S Alotaibi, A Alhassni, A Almunyif, H Albalawi, ... Semiconductor Science and Technology 36 (7), 075018, 2021 | | 2021 |
| Raman spectroscopy of n-type and p-type GaAs (1− x) Bix thin films grown by Molecular Beam Epitaxy on (311) B GaAs substrates SPA Souto, D Souza, S Alhassan, S Alotaibi, A Alhassni, A Almunyif, ... Anais, 2021 | | 2021 |
| Structural and optical properties of n-type and p-type GaAs (1− x) Bix thin films grown by molecular beam epitaxy on (311) B GaAs substrates D Souza, S Alhassan, S Alotaibi, A Alhassni, A Almunyif, H Albalawi, ... Semiconductor Science and Technology 36 (7), 1-12, 2021 | | 2021 |
| The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure S Alotaibi, M Henini, A Alhassni, M Schmidbauer, HVA Galeti, M Gunes, ... | | |
| Investigation of the Effect of Gamma Radiation on the Electrical and Optical Properties of Dilute Gaas1-Xbix Grown on Molecular Beam Epitaxy SS Alhassan, JF Felix, JFR Marroquin, WM de Azevedo, A Alhassni, ... Faisal and de Azevedo, Walter M. and Alhassni, Amra and Alghamdi, Haifa and …, 0 | | |
