Follow
Ava J. Tan
Ava J. Tan
Display Electrical Engineer, Apple Inc.
Verified email at berkeley.edu - Homepage
Title
Cited by
Cited by
Year
Enhanced ferroelectricity in ultrathin films grown directly on silicon
SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ...
Nature 580 (7804), 478-482, 2020
5642020
Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors
D Kwon, K Chatterjee, AJ Tan, AK Yadav, H Zhou, AB Sachid, R Dos Reis, ...
IEEE Electron Device Letters 39 (2), 300-303, 2017
1612017
Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles
AJ Tan, YH Liao, LC Wang, N Shanker, JH Bae, C Hu, S Salahuddin
IEEE Electron Device Letters 42 (7), 994-997, 2021
1302021
Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide
D Kwon, S Cheema, N Shanker, K Chatterjee, YH Liao, AJ Tan, C Hu, ...
IEEE Electron Device Letters 40 (6), 993-996, 2019
1222019
Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery
K Chatterjee, S Kim, G Karbasian, AJ Tan, AK Yadav, AI Khan, C Hu, ...
IEEE Electron Device Letters 38 (10), 1379-1382, 2017
912017
Stabilization of ferroelectric phase in tungsten capped Hf0. 8Zr0. 2O2
G Karbasian, R Dos Reis, AK Yadav, AJ Tan, C Hu, S Salahuddin
Applied Physics Letters 111 (2), 2017
662017
Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell
AJ Tan, K Chatterjee, J Zhou, D Kwon, YH Liao, S Cheema, C Hu, ...
IEEE Electron Device Letters 41 (2), 240-243, 2019
562019
Negative capacitance, n-channel, Si FinFETs: Bi-directional sub-60 mV/dec, negative DIBL, negative differential resistance and improved short channel effect
H Zhou, D Kwon, AB Sachid, Y Liao, K Chatterjee, AJ Tan, AK Yadav, ...
2018 IEEE Symposium on VLSI Technology, 53-54, 2018
512018
Highly scaled, high endurance, Ω-gate, nanowire ferroelectric FET memory transistors
JH Bae, D Kwon, N Jeon, S Cheema, AJ Tan, C Hu, S Salahuddin
IEEE Electron Device Letters 41 (11), 1637-1640, 2020
502020
Near threshold capacitance matching in a negative capacitance FET with 1 nm effective oxide thickness gate stack
D Kwon, S Cheema, YK Lin, YH Liao, K Chatterjee, AJ Tan, C Hu, ...
IEEE Electron Device Letters 41 (1), 179-182, 2019
422019
Response speed of negative capacitance FinFETs
D Kwon, YH Liao, YK Lin, JP Duarte, K Chatterjee, AJ Tan, AK Yadav, ...
2018 IEEE Symposium on VLSI Technology, 49-50, 2018
412018
Hot electrons as the dominant source of degradation for sub-5nm HZO FeFETs
AJ Tan, M Pešić, L Larcher, YH Liao, LC Wang, JH Bae, C Hu, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
392020
Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation
K Chatterjee, S Kim, G Karbasian, D Kwon, AJ Tan, AK Yadav, CR Serrao, ...
IEEE Electron Device Letters 40 (9), 1423-1426, 2019
332019
A nitrided interfacial oxide for interface state improvement in hafnium zirconium oxide-based ferroelectric transistor technology
AJ Tan, AK Yadav, K Chatterjee, D Kwon, S Kim, C Hu, S Salahuddin
IEEE Electron Device Letters 39 (1), 95-98, 2017
302017
Anomalously beneficial gate-length scaling trend of negative capacitance transistors
YH Liao, D Kwon, YK Lin, AJ Tan, C Hu, S Salahuddin
IEEE Electron Device Letters 40 (11), 1860-1863, 2019
282019
Fast read-after-write and depolarization fields in high endurance n-type ferroelectric FETs
M Hoffmann, AJ Tan, N Shanker, YH Liao, LC Wang, JH Bae, C Hu, ...
IEEE Electron Device Letters 43 (5), 717-720, 2022
252022
Ferroelectricity in HfO2 thin films as a function of Zr doping
G Karbasian, A Tan, A Yadav, EMH Sorensen, CR Serrao, AI Khan, ...
2017 International Symposium on VLSI Technology, Systems and Application …, 2017
152017
Electric field-induced permittivity enhancement in negative-capacitance FET
YH Liao, D Kwon, S Cheema, N Shanker, AJ Tan, MY Kao, LC Wang, ...
IEEE Transactions on Electron Devices 68 (3), 1346-1351, 2021
122021
Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET
AJ Tan, LC Wang, YH Liao, JH Bae, C Hu, S Salahuddin
2020 Device Research Conference (DRC), 1-2, 2020
72020
Write disturb-free ferroelectric FETs with non-accumulative switching dynamics
M Hoffmann, AJ Tan, N Shanker, YH Liao, LC Wang, JH Bae, C Hu, ...
IEEE Electron Device Letters 43 (12), 2097-2100, 2022
62022
The system can't perform the operation now. Try again later.
Articles 1–20