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Hyohyun Nam
Hyohyun Nam
6G Research Team, Samsung Research
Verified email at samsung.com - Homepage
Title
Cited by
Cited by
Year
Study of high-k/metal-gate work-function variation using Rayleigh distribution
H Nam, C Shin
IEEE Electron Device Letters 34 (4), 532-534, 2013
502013
Study of Work-Function Variation in High-/Metal-Gate Gate-All-Around Nanowire MOSFET
H Nam, Y Lee, JD Park, C Shin
IEEE Transactions on Electron Devices 63 (8), 3338-3341, 2016
352016
Impact of current flow shape in tapered (versus rectangular) FinFET on threshold voltage variation induced by work-function variation
H Nam, C Shin
IEEE Transactions on Electron Devices 61 (6), 2007-2011, 2014
332014
Study of High-/Metal-Gate Work Function Variation in FinFET: The Modified RGG Concept
H Nam, C Shin
IEEE electron device letters 34 (12), 1560-1562, 2013
282013
Symmetric tunnel field-effect transistor (S-TFET)
H Nam, MH Cho, C Shin
Current Applied Physics 15 (2), 71-77, 2015
262015
Random variation analysis and variation-aware design of symmetric tunnel field-effect transistor
H Lee, S Park, Y Lee, H Nam, C Shin
IEEE Transactions on Electron Devices 62 (6), 1778-1783, 2014
232014
The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type Ge FinFET performances
JK Kim, GS Kim, H Nam, C Shin, JH Park, JK Kim, BJ Cho, KC Saraswat, ...
IEEE Electron Device Letters 35 (12), 1185-1187, 2014
232014
Study of Work-Function Variation for High- /Metal-Gate Ge-Source Tunnel Field-Effect Transistors
Y Lee, H Nam, JD Park, C Shin
IEEE Transactions on Electron Devices 62 (7), 2143-2147, 2015
222015
Analysis of random variations and variation-robust advanced device structures
H Nam, GS Lee, H Lee, IJ Park, C Shin
JSTS: Journal of Semiconductor Technology and Science 14 (1), 8-22, 2014
172014
A 20.5-dBm -Band Power Amplifier With a 1.2-V Supply in 65-nm CMOS Technology
VS Trinh, H Nam, JD Park
IEEE Microwave and Wireless Components Letters 29 (3), 234-236, 2018
132018
Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High-/Metal-Gate Work-Function Variation
H Nam, C Shin, JD Park
IEEE Transactions on Electron Devices 65 (11), 4780-4785, 2018
132018
An X-band bi-directional transmit/receive module for a phased array system in 65-nm CMOS
VV Nguyen, H Nam, YJ Choe, BH Lee, JD Park
Sensors 18 (8), 2569, 2018
132018
Comparative study in work-function variation: Gaussian vs. Rayleigh distribution for grain size
H Nam, C Shin
IEICE Electronics Express 10 (9), 20130109-20130109, 2013
132013
A Full X-Band Phased-Array Transmit/Receive Module Chip in 65-nm CMOS Technology
H Nam, VV Nguyen, VS Trinh, JM Song, BH Lee, JD Park
IEEE Access 8, 76182-76192, 2020
112020
A Compact I/Q Upconversion Chain for a 5G Wireless Transmitter in 65-nm CMOS Technology
H Nam, W Lee, J Son, JD Park
IEEE Microwave and Wireless Components Letters 30 (3), 284 - 287, 2020
82020
A Low-Dropout Regulator with PSRR Enhancement through Feed-Forward Ripple Cancellation Technique in 65 nm CMOS Process
YJ Choe, H Nam, JD Park
Electronics 9 (1), 146, 2020
42020
A 2–18 GHz Compressed Sensing Receiver With Broadband LO Chain in 0.13- μ m BiCMOS
H Nam, J Park, JD Park
IEEE Microwave and Wireless Components Letters 29 (9), 620 - 622, 2019
42019
The design optimization and variation study of segmented-channel MOSFET using HfO2 or SiO2 trench isolation
H Nam, C Shin
2013 International Symposium on VLSI Technology, Systems and Application …, 2013
42013
A W-Band Divide-by-Three Injection-Locked Frequency Divider With Injection Current Boosting Utilizing Inductive Feedback in 65-nm CMOS
H Nam, JD Park
IEEE Microwave and Wireless Components Letters 30 (5), 516-519, 2020
32020
A 5.8‐17.6 GHz cascaded bi‐directional distributed gain amplifier utilizing asymmetric stages in 65 nm CMOS
VV Nguyen, H Nam, BH Lee, JD Park
Microwave and Optical Technology Letters 61 (7), 1683-1687, 2019
32019
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Articles 1–20