| High-Performance Depletion/Enhancement-ode -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide IEEE Electron Device Letters 38 (1), 103-106, 2016 | 285 | 2016 |
| Al2O3/ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing H Zhou, S Alghmadi, M Si, G Qiu, DY Peide IEEE Electron Device Letters 37 (11), 1411-1414, 2016 | 117 | 2016 |
| High-performance InAlN/GaN MOSHEMTs enabled by atomic layer epitaxy MgCaO as gate dielectric H Zhou, X Lou, NJ Conrad, M Si, H Wu, S Alghamdi, S Guo, RG Gordon, ... IEEE Electron Device Letters 37 (5), 556-559, 2016 | 52 | 2016 |
| Epitaxial Growth of MgxCa1–xO on GaN by Atomic Layer Deposition X Lou, H Zhou, SB Kim, S Alghamdi, X Gong, J Feng, X Wang, PD Ye, ... Nano letters 16 (12), 7650-7654, 2016 | 40 | 2016 |
| Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β-Ga2O3 pn Oxide Heterojunction H Bae, A Charnas, X Sun, J Noh, M Si, W Chung, G Qiu, X Lyu, ... ACS omega 4 (24), 20756-20761, 2019 | 30 | 2019 |
| Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in -Ga2O3 FETs H Bae, J Noh, S Alghamdi, M Si, DY Peide IEEE Electron Device Letters 39 (11), 1708-1711, 2018 | 14 | 2018 |
| Low frequency noise in MOS2 negative capacitance field-effect transistor S Alghamdi, M Si, L Yang, DY Peide 2018 IEEE International Reliability Physics Symposium (IRPS), P-TX. 1-1-P-TX …, 2018 | 12 | 2018 |
| Proposal and Simulation of Ga2O3 MOSFET With PN Heterojunction Structure for High-Performance E-Mode Operation W Lei, K Dang, H Zhou, J Zhang, C Wang, Q Xin, S Alghamdi, Z Liu, ... IEEE Transactions on Electron Devices 69 (7), 3617-3622, 2022 | 9 | 2022 |
| Single pulse charge pumping measurements on GaN MOS-HEMTs: Fast and reliable extraction of interface traps density S Alghamdi, M Si, H Bae, H Zhou, DY Peide IEEE Transactions on Electron Devices 67 (2), 444-448, 2020 | 9 | 2020 |
| Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing C Wang, Q Yan, C Su, S Alghamdi, E Ghandourah, Z Liu, X Feng, ... IEEE Electron Device Letters 44 (3), 380-383, 2023 | 5 | 2023 |
| High index core flat fiber surface plasmon resonance bio-sensor AF Alkhateeb, MS Islam, MY Ali, RJ Usha, S Tasnim, S Alghamdi, ... Applied Optics 61 (20), 5885-5893, 2022 | 3 | 2022 |
| Surface plasmon resonance voltage sensor based on a liquid crystal-infiltrated hollow fiber MS Islam, MA Mollah, AF Alkhateeb, W Zouch, S Alghamdi Optical Materials Express 12 (12), 4630-4642, 2022 | 2 | 2022 |
| BV > 3 kV/VTH = 3.5 V Normally-Off Al0.6Ga0.4N MOSFET With Recessed-Gate and Ferroelectric Gate Dielectric J Wang, H Zhou, S Alghamdi, J Zhang, X Zheng, Y Hao IEEE Electron Device Letters 43 (12), 2141-2144, 2022 | 1 | 2022 |
| Time response of polarization switching in Ge hafnium zirconium oxide nanowire ferroelectric field-effect transistors S Alghamdi, W Chung, M Si, DY Peide 2018 76th Device Research Conference (DRC), 1-2, 2018 | 1 | 2018 |
| InAlN/GaN MOSHEMTs with high drain current of 2.3 A/mm high on/off ratio of 1012 and low SS of 64 mV/dec enabled by atomic-layer-epitaxial MgCaO as gate … H Zhou, X Lou, H Wu, S Alghamdi, S Guo, RG Gordon, DY Peide 2015 73rd Annual Device Research Conference (DRC), 57-58, 2015 | 1 | 2015 |
| β-Ga2O3 Lateral Schottky Barrier Diodes with > 10 kV Breakdown Voltage and Anode Engineering C Wang, Q Yan, C Zhang, C Su, K Zhang, S Sun, Z Liu, W Zhang, ... IEEE Electron Device Letters, 2023 | | 2023 |
| Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage P Dong, C Wang, Q Yan, Y Wang, J Wang, S Alghamdi, Z Liu, J Zhang, ... 2023 Device Research Conference (DRC), 1-2, 2023 | | 2023 |
| Effect of dimensionless nonlocal parameter: Vibration of double-walled CNTs M Hussain, S Asghar, MA Khadimallah, H Ayed, S Alghamdi, JK Bhutto, ... COMPUTERS AND CONCRETE 30 (4), 269-276, 2022 | | 2022 |
| Based on Euler beam theory to evaluate the GHz frequencies versus length-to-radius ratios: Continuum model M Hussain, AOM Alzahrani, MA Khadimallah, S Alghamdi, A Fatahi-Vajari, ... Advances in Concrete Construction 14 (4), 291, 2022 | | 2022 |
| Direct strength measurement of Timoshenko-beam model: Vibration analysis of double walled carbon nanotubes E Ghandourah, M Hussain, F Al Thobiani, M Hefni, S Alghamdi Structural Engineering and Mechanics, An Int'l Journal 84 (1), 77-83, 2022 | | 2022 |
Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
