Sami Alghamdi
Sami Alghamdi
Assistant Professor at King Abdulaziz University - PhD, Purdue University
Verified email at - Homepage
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Cited by
High-Performance Depletion/Enhancement-ode -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide
IEEE Electron Device Letters 38 (1), 103-106, 2016
Al2O3/ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing
H Zhou, S Alghmadi, M Si, G Qiu, DY Peide
IEEE Electron Device Letters 37 (11), 1411-1414, 2016
High-performance InAlN/GaN MOSHEMTs enabled by atomic layer epitaxy MgCaO as gate dielectric
H Zhou, X Lou, NJ Conrad, M Si, H Wu, S Alghamdi, S Guo, RG Gordon, ...
IEEE Electron Device Letters 37 (5), 556-559, 2016
Epitaxial Growth of MgxCa1–xO on GaN by Atomic Layer Deposition
X Lou, H Zhou, SB Kim, S Alghamdi, X Gong, J Feng, X Wang, PD Ye, ...
Nano letters 16 (12), 7650-7654, 2016
Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β-Ga2O3 pn Oxide Heterojunction
H Bae, A Charnas, X Sun, J Noh, M Si, W Chung, G Qiu, X Lyu, ...
ACS omega 4 (24), 20756-20761, 2019
Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in -Ga2O3 FETs
H Bae, J Noh, S Alghamdi, M Si, DY Peide
IEEE Electron Device Letters 39 (11), 1708-1711, 2018
Low frequency noise in MOS2 negative capacitance field-effect transistor
S Alghamdi, M Si, L Yang, DY Peide
2018 IEEE International Reliability Physics Symposium (IRPS), P-TX. 1-1-P-TX …, 2018
Proposal and Simulation of Ga2O3 MOSFET With PN Heterojunction Structure for High-Performance E-Mode Operation
W Lei, K Dang, H Zhou, J Zhang, C Wang, Q Xin, S Alghamdi, Z Liu, ...
IEEE Transactions on Electron Devices 69 (7), 3617-3622, 2022
Single pulse charge pumping measurements on GaN MOS-HEMTs: Fast and reliable extraction of interface traps density
S Alghamdi, M Si, H Bae, H Zhou, DY Peide
IEEE Transactions on Electron Devices 67 (2), 444-448, 2020
Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing
C Wang, Q Yan, C Su, S Alghamdi, E Ghandourah, Z Liu, X Feng, ...
IEEE Electron Device Letters 44 (3), 380-383, 2023
High index core flat fiber surface plasmon resonance bio-sensor
AF Alkhateeb, MS Islam, MY Ali, RJ Usha, S Tasnim, S Alghamdi, ...
Applied Optics 61 (20), 5885-5893, 2022
Surface plasmon resonance voltage sensor based on a liquid crystal-infiltrated hollow fiber
MS Islam, MA Mollah, AF Alkhateeb, W Zouch, S Alghamdi
Optical Materials Express 12 (12), 4630-4642, 2022
BV > 3 kV/VTH = 3.5 V Normally-Off Al0.6Ga0.4N MOSFET With Recessed-Gate and Ferroelectric Gate Dielectric
J Wang, H Zhou, S Alghamdi, J Zhang, X Zheng, Y Hao
IEEE Electron Device Letters 43 (12), 2141-2144, 2022
Time response of polarization switching in Ge hafnium zirconium oxide nanowire ferroelectric field-effect transistors
S Alghamdi, W Chung, M Si, DY Peide
2018 76th Device Research Conference (DRC), 1-2, 2018
InAlN/GaN MOSHEMTs with high drain current of 2.3 A/mm high on/off ratio of 1012 and low SS of 64 mV/dec enabled by atomic-layer-epitaxial MgCaO as gate …
H Zhou, X Lou, H Wu, S Alghamdi, S Guo, RG Gordon, DY Peide
2015 73rd Annual Device Research Conference (DRC), 57-58, 2015
β-Ga2O3 Lateral Schottky Barrier Diodes with > 10 kV Breakdown Voltage and Anode Engineering
C Wang, Q Yan, C Zhang, C Su, K Zhang, S Sun, Z Liu, W Zhang, ...
IEEE Electron Device Letters, 2023
Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage
P Dong, C Wang, Q Yan, Y Wang, J Wang, S Alghamdi, Z Liu, J Zhang, ...
2023 Device Research Conference (DRC), 1-2, 2023
Effect of dimensionless nonlocal parameter: Vibration of double-walled CNTs
M Hussain, S Asghar, MA Khadimallah, H Ayed, S Alghamdi, JK Bhutto, ...
COMPUTERS AND CONCRETE 30 (4), 269-276, 2022
Based on Euler beam theory to evaluate the GHz frequencies versus length-to-radius ratios: Continuum model
M Hussain, AOM Alzahrani, MA Khadimallah, S Alghamdi, A Fatahi-Vajari, ...
Advances in Concrete Construction 14 (4), 291, 2022
Direct strength measurement of Timoshenko-beam model: Vibration analysis of double walled carbon nanotubes
E Ghandourah, M Hussain, F Al Thobiani, M Hefni, S Alghamdi
Structural Engineering and Mechanics, An Int'l Journal 84 (1), 77-83, 2022
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