| Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure M Si, PY Liao, G Qiu, Y Duan, PD Ye ACS nano 12 (7), 6700-6705, 2018 | 312 | 2018 |
| Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes JK Qin, PY Liao, M Si, S Gao, G Qiu, J Jian, Q Wang, SQ Zhang, S Huang, ... Nature electronics 3 (3), 141-147, 2020 | 161 | 2020 |
| Room-Temperature Electrocaloric Effect in Layered Ferroelectric CuInP2S6 for Solid-State Refrigeration M Si, AK Saha, PY Liao, S Gao, SM Neumayer, J Jian, J Qin, ... ACS nano 13 (8), 8760-8765, 2019 | 76 | 2019 |
| Alignment of polarization against an electric field in van der Waals ferroelectrics SM Neumayer, L Tao, A O'Hara, J Brehm, M Si, PY Liao, T Feng, ... Physical Review Applied 13 (6), 064063, 2020 | 46 | 2020 |
| Ionic control over ferroelectricity in 2D layered van der Waals capacitors SM Neumayer, M Si, J Li, PY Liao, L Tao, A O’Hara, ST Pantelides, PD Ye, ... ACS Applied Materials & Interfaces 14 (2), 3018-3026, 2022 | 22 | 2022 |
| A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current Z Zhang, Z Lin, PY Liao, V Askarpour, H Dou, Z Shang, A Charnas, M Si, ... IEEE Electron Device Letters 43 (11), 1905-1908, 2022 | 19 | 2022 |
| First Demonstration of BEOL-Compatible Ultrathin AtomicLayer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability D Zheng, A Charnas, J Anderson, H Dou, Z Hu, Z Lin, Z Zhang, J Zhang, ... 2022 International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2022 | 18 | 2022 |
| Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current Z Lin, M Si, V Askarpour, C Niu, A Charnas, Z Shang, Y Zhang, Y Hu, ... ACS nano 16 (12), 21536-21545, 2022 | 17 | 2022 |
| Realization of Maximum 2 A/mm Drain Current on Top-Gate Atomic-Layer-Thin Indium Oxide Transistors by Thermal Engineering PY Liao, M Si, Z Zhang, Z Lin, DY Peide IEEE Transactions on Electron Devices 69 (1), 147-151, 2021 | 17 | 2021 |
| Fluorine-passivated In2O3 thin film transistors with improved electrical performance via low-temperature CF4/N2O plasma J Zhang, A Charnas, Z Lin, D Zheng, Z Zhang, PY Liao, D Zemlyanov, ... Applied Physics Letters 121 (17), 2022 | 12 | 2022 |
| Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In2O3 FETs Toward Monolithic 3-D Integration PY Liao, D Zheng, S Alajlouni, Z Zhang, M Si, J Zhang, JY Lin, ... IEEE Transactions on Electron Devices 70 (4), 2052-2058, 2023 | 8 | 2023 |
| Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In₂O₃ FETs on Various Thermally Conductive Substrates Including Diamond PY Liao, S Alajlouni, Z Zhang, Z Lin, M Si, J Noh, TI Feygelson, MJ Tadjer, ... 2022 International Electron Devices Meeting (IEDM), 12.4. 1-12.4. 4, 2022 | 7 | 2022 |
| Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs PY Liao, S Alajlouni, M Si, Z Zhang, Z Lin, J Noh, C Wilk, A Shakouri, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 6 | 2022 |
| Alleviation of Self-Heating Effect in Top-Gated Ultrathin In2O3 FETs Using a Thermal Adhesion Layer PY Liao, K Khot, S Alajlouni, M Snure, J Noh, M Si, Z Zhang, A Shakouri, ... IEEE Transactions on Electron Devices 70 (1), 113-120, 2022 | 5 | 2022 |
| Selenene and Tellurene PY Liao, JK Qin, G Qiu, Y Wang, W Wu, DY Peide Xenes, 197-224, 2022 | 3 | 2022 |
| 2D Ferroelectric $\pmb {\mathrm {CuInP} _ {2}\mathrm {S} _ {6}} $: Synthesis, ReRAM, and FeRAM PY Liao, M Si, G Qiu, DY Peide 2018 76th Device Research Conference (DRC), 1-2, 2018 | 3 | 2018 |
| BEOL-Compatible, ALD-grown In2O3 Top-Gate FETs with Maximum Drain Current of 3 A/mm through Thermal Engineering and Pulse Measurement PY Liao, M Si, Z Zhang, Z Lin, PD Ye 2022 International Symposium on VLSI Technology, Systems and Applications …, 2022 | 2 | 2022 |
| Superconducting Field-Effect Transistors with PdxTe–Te Intimate Contacts C Niu, M Wang, Z Zhang, G Qiu, Y Wang, D Zheng, PY Liao, W Wu, PD Ye ACS nano, 2024 | 1 | 2024 |
| Reduced temperature in lateral (AlxGa1− x) 2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond HN Masten, JS Lundh, TI Feygelson, K Sasaki, Z Cheng, JA Spencer, ... Applied Physics Letters 124 (15), 2024 | 1 | 2024 |
| Nanocrystalline Diamond-Capped β-(AlxGa1-x) 2O3/Ga2O3 Heterostructure Field-Effect Transistor HN Masten, JS Lundh, JA Spencer, T Feygelson, J Hite, D Pennachio, ... | 1 | 2023 |
