| Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs HC Lin, PD Ye, GD Wilk Applied physics letters 87 (18), 2005 | 309 | 2005 |
| Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Depositedas Gate Dielectric Y Xuan, YQ Wu, HC Lin, T Shen, DY Peide IEEE Electron Device Letters 28 (11), 935-938, 2007 | 221 | 2007 |
| Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited AI2O3 gate dielectric Y Xuan, HC Lin, PD Ye, GD Wilk APPLIED PHYSICS LETTERS 88, 263518, 2006 | 211 | 2006 |
| Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors Q Xie, S Deng, M Schaekers, D Lin, M Caymax, A Delabie, XP Qu, ... Semiconductor Science and Technology 27 (7), 074012, 2012 | 207 | 2012 |
| Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- Dielectrics Y Xuan, HC Lin, DY Peide IEEE Transactions on electron devices 54 (8), 1811-1817, 2007 | 142 | 2007 |
| Capacitance-voltage characterization of GaAs–Al2O3 interfaces G Brammertz, HC Lin, K Martens, D Mercier, S Sioncke, A Delabie, ... Applied Physics Letters 93 (18), 2008 | 136 | 2008 |
| Electrical study of sulfur passivated In0. 53Ga0. 47As MOS capacitor and transistor with ALD Al2O3 as gate insulator HC Lin, WE Wang, G Brammertz, M Meuris, M Heyns Microelectronic Engineering 86 (7-9), 1554-1557, 2009 | 135 | 2009 |
| Doping-free complementary logic gates enabled by two-dimensional polarity-controllable transistors GV Resta, Y Balaji, D Lin, IP Radu, F Catthoor, PE Gaillardon, ... ACS nano 12 (7), 7039-7047, 2018 | 128 | 2018 |
| On the interface state density at In0. 53Ga0. 47As/oxide interfaces G Brammertz, HC Lin, M Caymax, M Meuris, M Heyns, M Passlack Applied Physics Letters 95 (20), 2009 | 122 | 2009 |
| A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied toand InP Capacitors G Brammertz, A Alian, DHC Lin, M Meuris, M Caymax, WE Wang IEEE Transactions on Electron Devices 58 (11), 3890-3897, 2011 | 121 | 2011 |
| 2D materials: roadmap to CMOS integration C Huyghebaert, T Schram, Q Smets, TK Agarwal, D Verreck, S Brems, ... 2018 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2018 | 102 | 2018 |
| Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current Q Smets, G Arutchelvan, J Jussot, D Verreck, I Asselberghs, AN Mehta, ... 2019 IEEE International Electron Devices Meeting (IEDM), 23.2. 1-23.2. 4, 2019 | 95 | 2019 |
| Polarity control in WSe2 double-gate transistors GV Resta, S Sutar, Y Balaji, D Lin, P Raghavan, I Radu, F Catthoor, ... Scientific reports 6 (1), 29448, 2016 | 95 | 2016 |
| Border traps in Ge/III–V channel devices: Analysis and reliability aspects E Simoen, DHC Lin, A Alian, G Brammertz, C Merckling, J Mitard, ... IEEE Transactions on Device and Materials Reliability 13 (4), 444-455, 2013 | 88 | 2013 |
| The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces HC Lin, G Brammertz, K Martens, G De Valicourt, L Negre, WE Wang, ... Applied Physics Letters 94 (15), 2009 | 86 | 2009 |
| Capacitance–voltage characterization of GaAs–oxide interfaces G Brammertz, HC Lin, K Martens, D Mercier, C Merckling, J Penaud, ... Journal of the Electrochemical Society 155 (12), H945, 2008 | 85 | 2008 |
| Electrical properties of III-V/oxide interfaces G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ... ECS transactions 19 (5), 375, 2009 | 83 | 2009 |
| Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ... 2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011 | 82 | 2011 |
| Enabling the high-performance InGaAs/Ge CMOS: A common gate stack solution D Lin, G Brammertz, S Sioncke, C Fleischmann, A Delabie, K Martens, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 76 | 2009 |
| Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric HC Lin, T Yang, H Sharifi, SK Kim, Y Xuan, T Shen, S Mohammadi, PD Ye Applied Physics Letters 91 (21), 2007 | 74 | 2007 |
