| An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM HY Cheng, WC Chien, IT Kuo, EK Lai, Y Zhu, JL Jordan-Sweet, A Ray, ... 2017 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2017 | 55 | 2017 |
| Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory HY Cheng, WC Chien, IT Kuo, CW Yeh, L Gignac, W Kim, EK Lai, YF Lin, ... 2018 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2018 | 50 | 2018 |
| Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material HY Cheng, WC Chien, M BrightSky, YH Ho, Y Zhu, A Ray, R Bruce, W Kim, ... 2015 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2015 | 50 | 2015 |
| A study on OTS-PCM pillar cell for 3-D stackable memory WC Chien, CW Yeh, RL Bruce, HY Cheng, IT Kuo, CH Yang, A Ray, ... IEEE Transactions on Electron Devices 65 (11), 5172-5179, 2018 | 37 | 2018 |
| Comprehensive scaling study on 3D cross-point PCM toward 1Znm node for SCM applications WC Chien, HY Ho, CW Yeh, CH Yang, HY Cheng, W Kim, IT Kuo, ... 2019 Symposium on VLSI Technology, T60-T61, 2019 | 25 | 2019 |
| A novel Ni/WOx/W resistive random access memory with excellent retention and low switching current WC Chien, YC Chen, FM Lee, YY Lin, EK Lai, YD Yao, J Gong, SF Horng, ... Japanese journal of applied physics 50 (4S), 04DD11, 2011 | 23 | 2011 |
| Reliability study of a 128Mb phase change memory chip implemented with doped Ga-Sb-Ge with extraordinary thermal stability WC Chien, HY Cheng, M BrightSky, A Ray, CW Yeh, W Kim, R Bruce, ... 2016 IEEE International Electron Devices Meeting (IEDM), 21.1. 1-21.1. 4, 2016 | 21 | 2016 |
| High endurance self-heating OTS-PCM pillar cell for 3D stackable memory CW Yeh, WC Chien, RL Bruce, HY Cheng, IT Kuo, CH Yang, A Ray, ... 2018 IEEE Symposium on VLSI Technology, 205-206, 2018 | 18 | 2018 |
| Overlay target design and evaluation for SADP process CW Yeh, CTH Huang, K Lin, CH Huang, E Yang, TH Yang, KC Chen, ... Metrology, Inspection, and Process Control for Microlithography XXVI 8324 …, 2012 | 18 | 2012 |
| Si incorporation into AsSeGe chalcogenides for high thermal stability, high endurance and extremely low Vth drift 3D stackable cross-point memory HY Cheng, IT Kuo, WC Chien, CW Yeh, YC Chou, N Gong, L Gignac, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 17 | 2020 |
| A novel low power phase change memory using inter-granular switching HL Lung, YH Ho, Y Zhu, WC Chien, S Kim, W Kim, HY Cheng, A Ray, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 17 | 2016 |
| A novel self-converging write scheme for 2-bits/cell phase change memory for storage class memory (SCM) application WC Chien, YH Ho, HY Cheng, M BrightSky, CJ Chen, CW Yeh, TS Chen, ... 2015 Symposium on VLSI Technology (VLSI Technology), T100-T101, 2015 | 17 | 2015 |
| A no-verification multi-level-cell (MLC) operation in cross-point OTS-PCM N Gong, W Chien, Y Chou, C Yeh, N Li, H Cheng, C Cheng, I Kuo, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 16 | 2020 |
| A novel tite buffered Cu-GeSbTe/SiO2 electrochemical resistive memory (ReRAM) YY Lin, FM Lee, YC Chen, WC Chien, CW Yeh, KY Hsieh, CY Lu 2010 Symposium on VLSI Technology, 91-92, 2010 | 15 | 2010 |
| Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory HY Cheng, WC Chien, IT Kuo, CH Yang, YC Chou, RL Bruce, EK Lai, ... 2021 IEEE International Electron Devices Meeting (IEDM), 28.6. 1-28.6. 4, 2021 | 12 | 2021 |
| A double-data-rate 2 (DDR2) interface phase-change memory with 533MB/s read-write data rate and 37.5 ns access latency for memory-type storage class memory applications HL Lung, CP Miller, CJ Chen, SC Lewis, J Morrish, T Perri, RC Jordan, ... 2016 IEEE 8th International Memory Workshop (IMW), 1-5, 2016 | 11 | 2016 |
| An experimental evaluation of partitioning algorithms CW Yeh, CK Cheng, TTY Lin [1991] Proceedings Fourth Annual IEEE International ASIC Conference and …, 1991 | 11 | 1991 |
| IEEE Int. Electron Devices Meeting (IEDM) WC Chien, HY Cheng, M BrightSky, A Ray, CW Yeh, W Kim, R Bruce, ... IEEE, Piscataway, 21.1, 2016 | 8 | 2016 |
| Solution for PCM and OTS intermixing on cross-point phase change memory WC Chien, LM Gignac, N Gong, CW Yeh, CH Yang, RL Bruce, HY Cheng, ... 2019 IEEE 11th International Memory Workshop (IMW), 1-4, 2019 | 7 | 2019 |
| Integrated circuit having line end created through use of mask that controls line end shortening and corner rounding arising from proximity effects CC Yang, CW Yeh, CH Huang US Patent App. 13/087,384, 2011 | 7 | 2011 |
