| Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure X Wang, K Han, W Wang, S Chen, X Ma, D Chen, J Zhang, J Du, Y Xiong, ... Applied Physics Letters 96 (15), 2010 | 57 | 2010 |
| Investigation of TiAlC by atomic layer deposition as N type work function metal for FinFET J Xiang, T Li, Y Zhang, X Wang, J Gao, H Cui, H Yin, J Li, W Wang, Y Ding, ... ECS Journal of Solid State Science and Technology 4 (12), P441, 2015 | 35 | 2015 |
| Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device X Wang, K Han, W Wang, X Ma, D Chen, J Zhang, J Du, Y Xiong, ... Applied Physics Letters 97 (6), 2010 | 33 | 2010 |
| Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure S Zhao, F Tian, H Xu, J Xiang, T Li, J Chai, J Duan, K Han, X Wang, ... IEEE Transactions on Electron Devices 69 (3), 1561-1567, 2022 | 32 | 2022 |
| Experimental investigation on oxidation kinetics of germanium by ozone X Wang, Z Zhao, J Xiang, W Wang, J Zhang, C Zhao, T Ye Applied Surface Science 390, 472-480, 2016 | 32 | 2016 |
| Investigation of N type metal TiAlC by thermal atomic layer deposition using TiCl4 and TEA as precursors J Xiang, Y Ding, L Du, C Xu, T Li, X Wang, J Li, C Zhao ECS Journal of Solid State Science and Technology 5 (5), P299, 2016 | 30 | 2016 |
| Band alignment of HfO2 on SiO2/Si structure X Wang, K Han, W Wang, J Xiang, H Yang, J Zhang, X Ma, C Zhao, ... Applied Physics Letters 100 (12), 2012 | 29 | 2012 |
| Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfxZr1-xO2/Interlayer/Si (MFIS) Gate Structure F Tian, S Zhao, H Xu, J Xiang, T Li, W Xiong, J Duan, J Chai, K Han, ... IEEE Transactions on Electron Devices 68 (11), 5872-5878, 2021 | 26 | 2021 |
| Investigation on the dominant key to achieve superior Ge surface passivation by GeOx based on the ozone oxidation X Wang, J Xiang, W Wang, Y Xiong, J Zhang, C Zhao Applied Surface Science 357, 1857-1862, 2015 | 24 | 2015 |
| Semiconductor device W Wang, S Chen, HAN Kai, X Wang, D Chen US Patent App. 13/061,555, 2011 | 18 | 2011 |
| Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks J Xiang, T Li, X Wang, K Han, J Li, C Zhao ECS Journal of Solid State Science and Technology 5 (6), P327, 2016 | 17 | 2016 |
| Dependence of electrostatic potential distribution of Al2O3/Ge structure on Al2O3 thickness X Wang, J Xiang, W Wang, C Zhao, J Zhang Surface Science 651, 94-99, 2016 | 16 | 2016 |
| Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3 gate dielectrics X Wang, J Xiang, S Wang, W Wang, C Zhao, T Ye, Y Xiong, J Zhang Journal of Physics D: Applied Physics 49 (25), 255104, 2016 | 16 | 2016 |
| A possible origin of core-level shift in SiO2/Si stacks X Wang, J Xiang, W Wang, J Zhang, K Han, H Yang, X Ma, C Zhao, ... Applied Physics Letters 102 (4), 2013 | 15 | 2013 |
| A polarization-switching, charge-trapping, modulated arithmetic logic unit for in-memory computing based on ferroelectric fin field-effect transistors Z Zhang, Y Luo, Y Cui, H Yang, Q Zhang, G Xu, Z Wu, J Xiang, Q Liu, ... ACS Applied Materials & Interfaces 14 (5), 6967-6976, 2022 | 13 | 2022 |
| Semiconductor device and method of manufacturing the same W Wang, HAN Kai, S Chen, X Wang, D Chen US Patent 8,507,991, 2013 | 13 | 2013 |
| First-principles study of oxygen vacancy defects in orthorhombic Hf0. 5Zr0. 5O2/SiO2/Si gate stack J Chai, H Xu, J Xiang, Y Zhang, L Zhou, S Zhao, F Tian, J Duan, K Han, ... Journal of Applied Physics 132 (10), 2022 | 12 | 2022 |
| Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs L Zhou, Q Zhang, H Yang, Z Ji, Z Zhang, Q Liu, H Xu, B Tang, E Simoen, ... IEEE Electron Device Letters 41 (7), 965-968, 2020 | 12 | 2020 |
| Investigation of thermal atomic layer deposited TiAlX (X= N or C) film as metal gate J Xiang, Y Zhang, T Li, X Wang, J Gao, H Yin, J Li, W Wang, Y Ding, C Xu, ... Solid-State Electronics 122, 64-69, 2016 | 12 | 2016 |
| Reexamination of band offset transitivity employing oxide heterojunctions X Wang, J Xiang, W Wang, J Zhang, K Han, H Yang, X Ma, C Zhao, ... Applied Physics Letters 102 (3), 2013 | 12 | 2013 |
