| Antiferroelectric negative capacitance from a structural phase transition in zirconia M Hoffmann, Z Wang, N Tasneem, A Zubair, PV Ravindran, M Tian, ... Nature communications 13 (1), 1228, 2022 | 29 | 2022 |
| Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals Z Wang, AA Gaskell, M Dopita, D Kriegner, N Tasneem, J Mack, ... Applied Physics Letters 112 (22), 222902, 2018 | 27 | 2018 |
| Cryogenic characterization of antiferroelectric zirconia down to 50 mk Z Wang, H Ying, N Tasneem, A Gaskell, JD Cressler, M Mourigal, AI Khan 2019 Device Research Conference (DRC), 85-86, 2019 | 3 | 2019 |
| Reflection mode mm-wave on-chip notch filters using coupled hairpin resonators AA Gaskell, T Stander Electronics Letters 52 (5), 376-378, 2016 | 1 | 2016 |
| The Effect of Annealing Temperature on Antiferroelectric Zirconia AA Gaskell, Z Wang, M Dopita, D Kriegner, N Tasneem, AI Khan 2022 International Symposium on VLSI Technology, Systems and Applications …, 2022 | | 2022 |
| An Antiferroelectric Zirconia MOS Capacitor on Degenerately Doped Silicon for Memory Applications AA Gaskell Georgia Institute of Technology, 2020 | | 2020 |
Zheng WangGeorgia Institute of TechnologyVerified email at gatech.edu
