| Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films H Yu, M Liao, W Zhao, G Liu, XJ Zhou, Z Wei, X Xu, K Liu, Z Hu, K Deng, ... ACS nano 11 (12), 12001-12007, 2017 | 472 | 2017 |
| Argon Plasma Induced Phase Transition in Monolayer MoS2 J Zhu, Z Wang, H Yu, N Li, J Zhang, JL Meng, M Liao, J Zhao, X Lu, L Du, ... Journal of the American Chemical Society 139 (30), 10216-10219, 2017 | 370 | 2017 |
| Retracted: Highly Sensitive MoS2 Humidity Sensors Array for Noncontact Sensation J Zhao, N Li, H Yu, Z Wei, M Liao, P Chen, S Wang, D Shi, Q Sun, ... Advanced materials 29 (34), 1702076, 2017 | 368 | 2017 |
| Boundary activated hydrogen evolution reaction on monolayer MoS2 J Zhu, ZC Wang, H Dai, Q Wang, R Yang, H Yu, M Liao, J Zhang, W Chen, ... Nature communications 10 (1), 1348, 2019 | 324 | 2019 |
| Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2 X Wang, J Tang, X Xia, C He, J Zhang, Y Liu, C Wan, C Fang, C Guo, ... Science advances 5 (8), eaaw8904, 2019 | 276 | 2019 |
| GrapheneContacted Ultrashort Channel Monolayer MoS2 Transistors L Xie, M Liao, S Wang, H Yu, L Du, J Tang, J Zhao, J Zhang, P Chen, X Lu, ... Advanced Materials 29 (37), 1702522, 2017 | 260 | 2017 |
| Precise control of the interlayer twist angle in large scale MoS2 homostructures M Liao, Z Wei, L Du, Q Wang, J Tang, H Yu, F Wu, J Zhao, X Xu, B Han, ... Nature communications 11 (1), 2153, 2020 | 177 | 2020 |
| UItra-low friction and edge-pinning effect in large-lattice-mismatch van der Waals heterostructures M Liao, P Nicolini, L Du, J Yuan, S Wang, H Yu, J Tang, P Cheng, ... Nature Materials 21 (1), 47-53, 2022 | 129 | 2022 |
| Twist angle-dependent conductivities across MoS2/graphene heterojunctions M Liao, ZW Wu, L Du, T Zhang, Z Wei, J Zhu, H Yu, J Tang, L Gu, Y Xing, ... Nature communications 9 (1), 4068, 2018 | 109 | 2018 |
| Precisely Aligned Monolayer MoS2 Epitaxially Grown on hBN basal Plane H Yu, Z Yang, L Du, J Zhang, J Shi, W Chen, P Chen, M Liao, J Zhao, ... Small 13 (7), 1603005, 2017 | 106 | 2017 |
| In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics J Tang, Z Wei, Q Wang, Y Wang, B Han, X Li, B Huang, M Liao, J Liu, N Li, ... Small 16 (42), 2004276, 2020 | 72 | 2020 |
| Rolling Up a Monolayer MoS2 Sheet. J Meng, G Wang, X Li, X Lu, J Zhang, H Yu, W Chen, L Du, M Liao, J Zhao, ... Small (Weinheim an der Bergstrasse, Germany) 12 (28), 3770-3774, 2016 | 67 | 2016 |
| Integrated Flexible and HighQuality Thin Film Transistors Based on Monolayer MoS2 J Zhao, W Chen, J Meng, H Yu, M Liao, J Zhu, R Yang, D Shi, G Zhang Advanced Electronic Materials 2 (3), 1500379, 2016 | 48 | 2016 |
| Enhancing and controlling valley magnetic response in MoS2/WS2 heterostructures by all-optical route J Zhang, L Du, S Feng, RW Zhang, B Cao, C Zou, Y Chen, M Liao, ... Nature Communications 10 (1), 4226, 2019 | 47 | 2019 |
| Modulating PL and electronic structures of MoS2/graphene heterostructures via interlayer twisting angle L Du, H Yu, M Liao, S Wang, L Xie, X Lu, J Zhu, N Li, C Shen, P Chen, ... Applied Physics Letters 111 (26), 2017 | 46 | 2017 |
| Robust spin-valley polarization in commensurate /graphene heterostructures L Du, Q Zhang, B Gong, M Liao, J Zhu, H Yu, R He, K Liu, R Yang, D Shi, ... Physical Review B 97 (11), 115445, 2018 | 39 | 2018 |
| Patterned Peeling 2D MoS2 off the Substrate J Zhao, H Yu, W Chen, R Yang, J Zhu, M Liao, D Shi, G Zhang ACS Applied Materials & Interfaces 8 (26), 16546-16550, 2016 | 38 | 2016 |
| Strongly enhanced exciton-phonon coupling in two-dimensional L Du, M Liao, J Tang, Q Zhang, H Yu, R Yang, K Watanabe, T Taniguchi, ... Physical Review B 97 (23), 235145, 2018 | 35 | 2018 |
| Magnetotransport properties of graphene nanoribbons with zigzag edges S Wu, B Liu, C Shen, S Li, X Huang, X Lu, P Chen, G Wang, D Wang, ... Physical review letters 120 (21), 216601, 2018 | 35 | 2018 |
| 2D proximate quantum spin liquid state in atomic-thin α-RuCl3 L Du, Y Huang, Y Wang, Q Wang, R Yang, J Tang, M Liao, D Shi, Y Shi, ... 2D Materials 6 (1), 015014, 2018 | 31 | 2018 |
Guangyu ZhangInstitute of Physics, CAS在 aphy.iphy.ac.cn 的电子邮件经过验证
