Da-Shan Shang
Cited by
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Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag∕ La 0.7 Ca 0.3 MnO 3∕ Pt heterostructures
DS Shang, Q Wang, LD Chen, R Dong, XM Li, WQ Zhang
Physical Review B 73 (24), 245427, 2006
A synaptic transistor based on quasi‐2D molybdenum oxide
CS Yang, DS Shang, N Liu, G Shi, X Shen, RC Yu, YQ Li, Y Sun
Advanced Materials 29 (27), 1700906, 2017
All‐solid‐state synaptic transistor with ultralow conductance for neuromorphic computing
CS Yang, DS Shang, N Liu, EJ Fuller, S Agrawal, AA Talin, YQ Li, ...
Advanced Functional Materials 28 (42), 1804170, 2018
Giant magnetoelectric effects achieved by tuning spin cone symmetry in Y-type hexaferrites
K Zhai, Y Wu, S Shen, W Tian, H Cao, Y Chai, BC Chakoumakos, ...
Nature communications 8 (1), 519, 2017
Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing
DS Shang, L Shi, JR Sun, BG Shen, F Zhuge, RW Li, YG Zhao
Applied Physics Letters 96 (7), 072103, 2010
A highly CMOS compatible hafnia-based ferroelectric diode
Q Luo, Y Cheng, J Yang, R Cao, H Ma, Y Yang, R Huang, W Wei, ...
Nature communications 11 (1), 1391, 2020
Oxide‐based electrolyte‐gated transistors for spatiotemporal information processing
Y Li, J Lu, D Shang, Q Liu, S Wu, Z Wu, X Zhang, J Yang, Z Wang, H Lv, ...
Advanced Materials 32 (47), 2003018, 2020
Retention behavior of the electric-pulse-induced reversible resistance change effect in sandwiches
R Dong, Q Wang, LD Chen, DS Shang, TL Chen, XM Li, WQ Zhang
Applied Physics Letters 86 (17), 172107, 2005
Resistive switching properties in oxygen-deficient junctions with active Al top electrodes
SL Li, DS Shang, J Li, JL Gang, DN Zheng
Journal of Applied Physics 105 (3), 033710, 2009
Improvement of endurance in HZO-based ferroelectric capacitor using Ru electrode
R Cao, B Song, D Shang, Y Yang, Q Luo, S Wu, Y Li, Y Wang, H Lv, Q Liu, ...
IEEE Electron Device Letters 40 (11), 1744-1747, 2019
Bipolar resistance switching in fully transparent ZnO: Mg-based devices
L Shi, D Shang, J Sun, B Shen
Applied physics express 2 (10), 101602, 2009
Room‐temperature nonvolatile memory based on a single‐phase multiferroic hexaferrite
K Zhai, DS Shang, YS Chai, G Li, JW Cai, BG Shen, Y Sun
Advanced Functional Materials 28 (9), 1705771, 2018
Mimicking synaptic plasticity and neural network using memtranstors
JX Shen, DS Shang, YS Chai, SG Wang, BG Shen, Y Sun
Advanced Materials 30 (12), 1706717, 2018
Artificial synapse based on van der Waals heterostructures with tunable synaptic functions for neuromorphic computing
C He, J Tang, DS Shang, J Tang, Y Xi, S Wang, N Li, Q Zhang, JK Lu, ...
ACS applied materials & interfaces 12 (10), 11945-11954, 2020
Photoresponse of the Schottky junction in different resistive states
DS Shang, JR Sun, L Shi, BG Shen
Applied Physics Letters 93 (10), 102106, 2008
Nonvolatile memory based on nonlinear magnetoelectric effects
J Shen, J Cong, Y Chai, D Shang, S Shen, K Zhai, Y Tian, Y Sun
Physical Review Applied 6 (2), 021001, 2016
Quantum electric-dipole liquid on a triangular lattice
SP Shen, JC Wu, JD Song, XF Sun, YF Yang, YS Chai, DS Shang, ...
Nature Communications 7 (1), 10569, 2016
A multilevel nonvolatile magnetoelectric memory
J Shen, J Cong, D Shang, Y Chai, S Shen, K Zhai, Y Sun
Scientific reports 6 (1), 34473, 2016
Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films
DS Shang, L Shi, JR Sun, BG Shen
Nanotechnology 22 (25), 254008, 2011
The polarity origin of the bipolar resistance switching behaviors in junctions
R Yang, XM Li, WD Yu, XD Gao, DS Shang, XJ Liu, X Cao, Q Wang, ...
Applied Physics Letters 95 (7), 072105, 2009
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