| Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag∕ La 0.7 Ca 0.3 MnO 3∕ Pt heterostructures DS Shang, Q Wang, LD Chen, R Dong, XM Li, WQ Zhang Physical Review B 73 (24), 245427, 2006 | 373 | 2006 |
| A synaptic transistor based on quasi‐2D molybdenum oxide CS Yang, DS Shang, N Liu, G Shi, X Shen, RC Yu, YQ Li, Y Sun Advanced Materials 29 (27), 1700906, 2017 | 317 | 2017 |
| All‐solid‐state synaptic transistor with ultralow conductance for neuromorphic computing CS Yang, DS Shang, N Liu, EJ Fuller, S Agrawal, AA Talin, YQ Li, ... Advanced Functional Materials 28 (42), 1804170, 2018 | 299 | 2018 |
| Giant magnetoelectric effects achieved by tuning spin cone symmetry in Y-type hexaferrites K Zhai, Y Wu, S Shen, W Tian, H Cao, Y Chai, BC Chakoumakos, ... Nature communications 8 (1), 519, 2017 | 102 | 2017 |
| Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing DS Shang, L Shi, JR Sun, BG Shen, F Zhuge, RW Li, YG Zhao Applied Physics Letters 96 (7), 072103, 2010 | 102 | 2010 |
| A highly CMOS compatible hafnia-based ferroelectric diode Q Luo, Y Cheng, J Yang, R Cao, H Ma, Y Yang, R Huang, W Wei, ... Nature communications 11 (1), 1391, 2020 | 94 | 2020 |
| Oxide‐based electrolyte‐gated transistors for spatiotemporal information processing Y Li, J Lu, D Shang, Q Liu, S Wu, Z Wu, X Zhang, J Yang, Z Wang, H Lv, ... Advanced Materials 32 (47), 2003018, 2020 | 88 | 2020 |
| Retention behavior of the electric-pulse-induced reversible resistance change effect in sandwiches R Dong, Q Wang, LD Chen, DS Shang, TL Chen, XM Li, WQ Zhang Applied Physics Letters 86 (17), 172107, 2005 | 83 | 2005 |
| Resistive switching properties in oxygen-deficient junctions with active Al top electrodes SL Li, DS Shang, J Li, JL Gang, DN Zheng Journal of Applied Physics 105 (3), 033710, 2009 | 78 | 2009 |
| Improvement of endurance in HZO-based ferroelectric capacitor using Ru electrode R Cao, B Song, D Shang, Y Yang, Q Luo, S Wu, Y Li, Y Wang, H Lv, Q Liu, ... IEEE Electron Device Letters 40 (11), 1744-1747, 2019 | 77 | 2019 |
| Bipolar resistance switching in fully transparent ZnO: Mg-based devices L Shi, D Shang, J Sun, B Shen Applied physics express 2 (10), 101602, 2009 | 74 | 2009 |
| Room‐temperature nonvolatile memory based on a single‐phase multiferroic hexaferrite K Zhai, DS Shang, YS Chai, G Li, JW Cai, BG Shen, Y Sun Advanced Functional Materials 28 (9), 1705771, 2018 | 71 | 2018 |
| Mimicking synaptic plasticity and neural network using memtranstors JX Shen, DS Shang, YS Chai, SG Wang, BG Shen, Y Sun Advanced Materials 30 (12), 1706717, 2018 | 67 | 2018 |
| Artificial synapse based on van der Waals heterostructures with tunable synaptic functions for neuromorphic computing C He, J Tang, DS Shang, J Tang, Y Xi, S Wang, N Li, Q Zhang, JK Lu, ... ACS applied materials & interfaces 12 (10), 11945-11954, 2020 | 66 | 2020 |
| Photoresponse of the Schottky junction in different resistive states DS Shang, JR Sun, L Shi, BG Shen Applied Physics Letters 93 (10), 102106, 2008 | 66 | 2008 |
| Nonvolatile memory based on nonlinear magnetoelectric effects J Shen, J Cong, Y Chai, D Shang, S Shen, K Zhai, Y Tian, Y Sun Physical Review Applied 6 (2), 021001, 2016 | 63 | 2016 |
| Quantum electric-dipole liquid on a triangular lattice SP Shen, JC Wu, JD Song, XF Sun, YF Yang, YS Chai, DS Shang, ... Nature Communications 7 (1), 10569, 2016 | 57 | 2016 |
| A multilevel nonvolatile magnetoelectric memory J Shen, J Cong, D Shang, Y Chai, S Shen, K Zhai, Y Sun Scientific reports 6 (1), 34473, 2016 | 56 | 2016 |
| Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films DS Shang, L Shi, JR Sun, BG Shen Nanotechnology 22 (25), 254008, 2011 | 56 | 2011 |
| The polarity origin of the bipolar resistance switching behaviors in junctions R Yang, XM Li, WD Yu, XD Gao, DS Shang, XJ Liu, X Cao, Q Wang, ... Applied Physics Letters 95 (7), 072105, 2009 | 56 | 2009 |
Young SunInstitute of Physics, Chinese Academy of Sciences, ChinaVerified email at iphy.ac.cn
