Vishal Khandelwal

引用次數

	全部	自 2019 年
引文	69	69
H 指數	6	6
i10 指數	4	4

2022202320242 25 42

共同作者

Xiaohang LiAssociate Professor, Advanced Semiconductor Lab, ECE, KAUST, Saudi Arabia在 kaust.edu.sa 的電子郵件地址已通過驗證
Yi LuUniversity of Wisconsin-Madison; King Abdullah University of Science and Technology在 wisc.edu 的電子郵件地址已通過驗證
Saravanan YuvarajaPhD Electrophysics在 kaust.edu.sa 的電子郵件地址已通過驗證
ChuanJu WangKing Abdullah University of Science and Technology在 kaust.edu.sa 的電子郵件地址已通過驗證
Biplab SarkarAssistant Professor, IIT Roorkee在 ece.iitr.ac.in 的電子郵件地址已通過驗證
Rongyu LinJohns Hopkins University; Ph.D. in ECE at KAUST在 jhu.edu 的電子郵件地址已通過驗證
Che-Hao LiaoNational Yunlin University of Science and Technology在 yuntech.edu.tw 的電子郵件地址已通過驗證
Shibin KrishnaPost Doctoral Research Associate, Cardiff University, United Kingdom在 cardiff.ac.uk 的電子郵件地址已通過驗證
Zhiyuan LiuKing Abdullah University of Science and Technology在 kaust.edu.sa 的電子郵件地址已通過驗證
Feras AlQatariPhD Candidate, King Abdullah University of Science and Technology在 kaust.edu.sa 的電子郵件地址已通過驗證
Dhanu ChettriKAUST在 kaust.edu.sa 的電子郵件地址已通過驗證
Ganesh MainaliPhD Student of KAUST, M.Sc Kwangwoon University在 kaust.edu.sa 的電子郵件地址已通過驗證
Na XiaoKing Abdullah University of Science and Technology在 kaust.edu.sa 的電子郵件地址已通過驗證
Ronghui LinKing Abdullah University of Science and Technology在 kaust.edu.sa 的電子郵件地址已通過驗證
Husam N AlshareefKAUST, Saudi Arabia; Univeristy of Texas at Dallas (Adjunct)在 kaust.edu.sa 的電子郵件地址已通過驗證
Amruth CLodz University of Technology在 p.lodz.pl 的電子郵件地址已通過驗證
Derya BaranKing Abdullah University of Science and Technology (KAUST)在 kaust.edu.sa 的電子郵件地址已通過驗證

追蹤

Vishal Khandelwal

Ph.D. King Abdullah University of Science and Technology, Saudi Arabia

在 kaust.edu.sa 的電子郵件地址已通過驗證 - 首頁

Wide bandgap Semiconductor Thin-film Transistors UWBG Oxide Electronics UWBG Memory Extreme Environment Electronics


標題按引用次數排序按年份排序按標題排序	引用次數引用次數	年份
Wide bandgap semiconductor-based integrated circuits S Yuvaraja, V Khandelwal, X Tang, X Li Chip, 100072, 2023	12	2023
Origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures C Wang, F AlQatari, V Khandelwal, R Lin, X Li Applied Surface Science 608, 155099, 2023	10	2023
Band alignment of orthorhombic Ga2O3 with GaN and AlN semiconductors S Krishna, Y Lu, CH Liao, V Khandelwal, X Li Applied Surface Science 599, 153901, 2022	10	2022
A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm R Lin, Z Liu, P Han, R Lin, Y Lu, H Cao, X Tang, C Wang, V Khandelwal, ... Journal of Materials Chemistry C 10 (46), 17602-17610, 2022	10	2022
A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction JMT Vasquez, A Ashai, Y Lu, V Khandelwal, M Rajbhar, M Kumar, X Li, ... Journal of Physics D: Applied Physics 56 (6), 065104, 2023	9	2023
Monolithic β-Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs V Khandelwal, S Yuvaraja, GIM García, C Wang, Y Lu, F AlQatari, X Li Applied Physics Letters 122 (14), 2023	7	2023
Ti₃C₂T_x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors C Wang, X Xu, S Tyagi, PC Rout, U Schwingenschlögl, B Sarkar, ... Advanced Materials 35 (22), 2211738, 2023	6	2023
-GaO Pseudo-CMOS Monolithic Inverters D Chettri, G Mainali, C Amruth, V Khandelwal, S Yuvaraja, N Xiao, X Tang, ... IEEE Transactions on Electron Devices, 2023	4	2023
Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics V Khandelwal, M Rajbhar, GIM Garcia, T Tang, B Sarkar, X Li Japanese Journal of Applied Physics, 2023	1	2023
Integration of low-thermal-budget In2O3 NMOS inverter and GaN HEMT for power electronics M Kumar, S Yuvaraja, N Xiao, MK Rajbhar, G Mainali, V Khandelwal, ... Applied Physics Letters 124 (11), 2024		2024
Gate Stack Engineering in n-type (− 201) $\upbeta-\text {Ga} _ {2}\mathrm {O} _ {3} $ Transistors V Khandelwal, S Yuvaraja, C Wang, D Chettri, X Li 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2022		2022
Demonstration of Ga2O3 Trigate Transistors on (100) Silicon Substrates S Yuvaraja, V Khandelwal, S Krishna, Y Lu, Z Liu, M Kumar, D Chettri, ... IEEE International Conference on Emerging Electronics (ICEE), 2022		2022
Enhancement-mode Ambipolar Thin-film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors Y Saravanan, K Vishal, K Shibin, L Yi, L Zhiyuan, K Mritunjay, T Xiao, ...

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