The Nucleon form-factors of the energy momentum tensor in the Skyrme model C Cebulla, K Goeke, J Ossmann, P Schweitzer arXiv preprint hep-ph/0703025, 2007 | 95 | 2007 |
Experimental result and simulation analysis for the use of pixelated illumination from source mask optimization for 22nm logic lithography process K Lai, AE Rosenbluth, S Bagheri, J Hoffnagle, K Tian, D Melville, ... Optical Microlithography XXII 7274, 82-93, 2009 | 70 | 2009 |
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Generation of arbitrary freeform source shapes using advanced illumination systems in high-NA immersion scanners J Zimmermann, P Gräupner, JT Neumann, D Hellweg, D Jürgens, M Patra, ... Optical Microlithography XXIII 7640, 36-50, 2010 | 47 | 2010 |
Freeform illumination sources: an experimental study of source-mask optimization for 22-nm SRAM cells J Bekaert, B Laenens, S Verhaegen, L Van Look, D Trivkovic, F Lazzarino, ... Optical Microlithography XXIII 7640, 79-90, 2010 | 41 | 2010 |
The twist-3 parton distribution function e (x) in large-Nc chiral theory C Cebulla, J Ossmann, P Schweitzer, D Urbano arXiv preprint arXiv:0710.3103, 2007 | 35 | 2007 |
Flexible illumination for ultra-fine resolution with 0.33 NA EUV lithography J Zimmermann, P Gräupner, R Gehrke, A Winkler, C Hennerkes, S Hsu Int. Symp. on Extreme Ultraviolet Lithography, 2016 | 7 | 2016 |
Mask contribution to OPC model accuracy A Lyons, T Wallow, C Hennerkes, C Spence, M Delorme, D Rio, ... Extreme Ultraviolet Lithography 2020 11517, 98-108, 2020 | 6 | 2020 |
Collector I Saenger, J Zimmermann, D Kraehmer, J Ruoff, M Meier, F Schlesener, ... US Patent 9,645,503, 2017 | 6 | 2017 |
Illumination optical unit for projection lithography C Hennerkes, I Saenger, J Zimmermann, J Ruoff, M Meier, F Schlesener US Patent 9,507,269, 2016 | 4 | 2016 |
Statistical analysis of the impact of 2D reticle variability on wafer variability in advanced EUV nodes using large-scale Monte Carlo simulations A Lyons, L Long, T Wallow, C Spence, T Kiers, P van Adrichem, ... Extreme Ultraviolet (EUV) Lithography XII 11609, 12-23, 2021 | 3 | 2021 |
Illumination system for an EUV lithography device and facet mirror therefor J Ruoff, I Saenger, J Zimmermann, D Kraehmer, C Hennerkes, ... US Patent 9,551,941, 2017 | 3 | 2017 |
Freeform illumination sources: Source mask optimization for 22 nm node SRAM J Bekaert, B Laenens, S Verhaegen, L Van Look, D Trivkovic, F Lazzarino, ... | 3 | 2009 |
EUV light source for generating a usable output beam for a projection exposure apparatus I Saenger, M Maul, C Hennerkes, J Ruoff, D Kraehmer US Patent 9,955,563, 2018 | 2 | 2018 |
Method for predicting at least one illumination parameter for evaluating an illumination setting R Gehrke, C Hennerkes, W Hoegele, J Zimmermann US Patent 10,078,267, 2018 | 1 | 2018 |
Wavefront optimization for tuning scanner based on performance matching DFS Hsu, CRKC Hennerkes, RC Howell, Z Shi, XJ Li, F Staals US Patent 11,977,334, 2024 | | 2024 |
EUV OPC modeling of dry photoresist system for pitch 32nm BEOL JM Chen, D Rio, M Delorme, C Tabery, C Hennerkes, C Spence, B Kam, ... Optical and EUV Nanolithography XXXVII 12953, 104-118, 2024 | | 2024 |
Computational lithography and patterning evaluation to support EUV high-NA stitching CE Tabery, J Hu, R Zhao, C Hennerkes, S Hsu, Y Liu, N Davydova, ... Optical and EUV Nanolithography XXXVII, PC129530M, 2024 | | 2024 |
Aerial imaging (AIMS) based computational lithography model calibration and mask metrology for high-NA EUV N Pandey, S Hunsche, A Lyons, C Hennerkes, A Verch, M Albert, ... Photomask Technology 2023 12751, 2023 | | 2023 |
Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method F Staals, CRKC Hennerkes US Patent 11,733,615, 2023 | | 2023 |