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Krishna Mandal
Krishna Mandal
其他姓名Krishna C Mandal
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
在 cec.sc.edu 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Studies on new chemically deposited photoconducting antimony trisulphide thin films
O Savadogo, KC Mandal
Solar energy materials and solar cells 26 (1-2), 117-136, 1992
2491992
Optical properties of Nd 3+-and Tb 3+-doped KPb 2 Br 5 and RbPb 2 Br 5 with low nonradiative decay
K Rademaker, WF Krupke, RH Page, SA Payne, K Petermann, G Huber, ...
JOSA B 21 (12), 2117-2129, 2004
1042004
Low Cost Schottky Barrier Solar Cells Fabricated on CdSe and Sb2 S 3 Films Chemically Deposited with Silicotungstic Acid
O Savadogo, KC Mandal
Journal of the Electrochemical Society 141 (10), 2871, 1994
951994
Ultrafast Electronic Relaxation Dynamics in PbI2 Semiconductor Colloidal Nanoparticles:  A Femtosecond Transient Absorption Study
A Sengupta, B Jiang, KC Mandal, JZ Zhang
The Journal of Physical Chemistry B 103 (16), 3128-3137, 1999
921999
High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis
SK Chaudhuri, KJ Zavalla, KC Mandal
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2013
832013
Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach
SK Chaudhuri, KJ Zavalla, KC Mandal
Applied Physics Letters 102 (3), 2013
772013
Characterizations of Antimony TriSulfide Chemically Deposited with Silicotungstic Acid
O Savadogo, KC Mandal
Journal of the Electrochemical Society 139 (1), L16, 1992
691992
Low Energy X-Ray and-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer
KC Mandal, PG Muzykov, SK Chaudhuri, JR Terry
IEEE Transactions on Nuclear Science 60 (4), 2888-2893, 2013
652013
Characterization of semi-insulating 4H silicon carbide for radiation detectors
KC Mandal, RM Krishna, PG Muzykov, S Das, TS Sudarshan
IEEE Transactions on Nuclear Science 58 (4), 1992-1999, 2011
572011
Characterization of Low-Defectand CdTe Crystals for High-Performance Frisch Collar Detectors
KC Mandal, SH Kang, M Choi, A Kargar, MJ Harrison, DS McGregor, ...
IEEE Transactions on Nuclear Science 54 (4), 802-806, 2007
572007
III–VI chalcogenide semiconductor crystals for broadband tunable THz sources and sensors
KC Mandal, SH Kang, M Choi, J Chen, XC Zhang, JM Schleicher, ...
IEEE Journal of Selected Topics in Quantum Electronics 14 (2), 284-288, 2008
552008
Lowcost technique for preparing nSb2S3/pSi heterojunction solar cells
O Savadogo, KC Mandal
Applied physics letters 63 (2), 228-230, 1993
541993
In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge
KC Mandal, F Ozanam, JN Chazalviel
Applied physics letters 57 (26), 2788-2790, 1990
541990
Ultrafast Electronic Relaxation Dynamics in Layered Iodide Semiconductors:  A Comparative Study of Colloidal BiI3 and PbI2 Nanoparticles
A Sengupta, KC Mandal, JZ Zhang
The Journal of Physical Chemistry B 104 (40), 9396-9403, 2000
522000
Doping dependence of electronic and mechanical properties of GaSe 1− x Te x and Ga 1− x In x Se from first principles
Z Rak, SD Mahanti, KC Mandal, NC Fernelius
Physical Review B 82 (15), 155203, 2010
492010
Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies
MA Mannan, SK Chaudhuri, KV Nguyen, KC Mandal
Journal of Applied Physics 115 (22), 2014
482014
Defect levels in Cu2ZnSn (SxSe1− x) 4 solar cells probed by current-mode deep level transient spectroscopy
S Das, SK Chaudhuri, RN Bhattacharya, KC Mandal
Applied Physics Letters 104 (19), 2014
482014
Electronic structure of substitutional defects and vacancies in GaSe
Z Rak, SD Mahanti, KC Mandal, NC Fernelius
Journal of Physics and Chemistry of Solids 70 (2), 344-355, 2009
482009
Advances in high-resolution radiation detection using 4H-SiC epitaxial layer devices
KC Mandal, JW Kleppinger, SK Chaudhuri
Micromachines 11 (3), 254, 2020
472020
Correlation of deep levels with detector performance in 4H-SiC epitaxial Schottky barrier alpha detectors
KC Mandal, SK Chaudhuri, KV Nguyen, MA Mannan
IEEE Transactions on Nuclear Science 61 (4), 2338-2344, 2014
472014
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