| Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation … Z Zhang, Q Qian, B Li, KJ Chen ACS applied materials & interfaces 10 (20), 17419-17426, 2018 | 220 | 2018 |
| High-field linear magneto-resistance in topological insulator Bi2Se3 thin films H He, B Li, H Liu, X Guo, Z Wang, M Xie, J Wang Applied Physics Letters 100 (3), 2012 | 132 | 2012 |
| Mechanism of Threshold Voltage Shift in-GaN Gate AlGaN/GaN Transistors X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev IEEE Electron Device Letters 39 (8), 1145-1148, 2018 | 114 | 2018 |
| Exciton and trion in few-layer MoS2: Thickness-and temperature-dependent photoluminescence S Golovynskyi, I Irfan, M Bosi, L Seravalli, OI Datsenko, I Golovynska, B Li, ... Applied Surface Science 515, 146033, 2020 | 95 | 2020 |
| Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology KJ Chen, L Yuan, MJ Wang, H Chen, S Huang, Q Zhou, C Zhou, BK Li, ... 2011 International Electron Devices Meeting, 19.4. 1-19.4. 4, 2011 | 93 | 2011 |
| Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen IEEE Electron Device Letters 36 (12), 1287-1290, 2015 | 91 | 2015 |
| Characterization of VTinstability in enhancementmode Al2O3AlGaN/GaN MISHEMTs Y Lu, S Yang, Q Jiang, Z Tang, B Li, KJ Chen physica status solidi (c) 10 (11), 1397-1400, 2013 | 89 | 2013 |
| Disorder-induced linear magnetoresistance in (221) topological insulator Bi2Se3 films HT He, HC Liu, BK Li, X Guo, ZJ Xu, MH Xie, JN Wang Applied Physics Letters 103 (3), 2013 | 67 | 2013 |
| Influence of AlN passivation on dynamic ON-resistance and electric field distribution in high-voltage AlGaN/GaN-on-Si HEMTs Z Tang, S Huang, X Tang, B Li, KJ Chen IEEE Transactions on Electron Devices 61 (8), 2785-2792, 2014 | 63 | 2014 |
| Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer Q Qian, B Li, M Hua, Z Zhang, F Lan, Y Xu, R Yan, KJ Chen Scientific reports 6 (1), 27676, 2016 | 56 | 2016 |
| Surface nitridation for improved dielectric/IIInitride interfaces in GaN MISHEMTs KJ Chen, S Yang, Z Tang, S Huang, Y Lu, Q Jiang, S Liu, C Liu, B Li physica status solidi (a) 212 (5), 1059-1065, 2015 | 55 | 2015 |
| Theoretical study on the photocatalytic properties of 2D InX (X= S, Se)/transition metal disulfide (MoS 2 and WS 2) van der Waals heterostructures H Guo, Z Zhang, B Huang, X Wang, H Niu, Y Guo, B Li, R Zheng, H Wu Nanoscale 12 (38), 20025-20032, 2020 | 52 | 2020 |
| Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen 2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015 | 51 | 2015 |
| Strain-tunable III-nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation Z Zhang, B Huang, Q Qian, Z Gao, X Tang, B Li Apl Materials 8 (4), 2020 | 49 | 2020 |
| Control of secondary phases and disorder degree in Cu2ZnSnS4 films by sulfurization at varied subatmospheric pressures IS Babichuk, MO Semenenko, S Golovynskyi, R Caballero, OI Datsenko, ... Solar Energy Materials and Solar Cells 200, 109915, 2019 | 45 | 2019 |
| Simulation study of a power MOSFET with built-in channel diode for enhanced reverse recovery performance M Zhang, J Wei, X Zhou, H Jiang, B Li, KJ Chen IEEE Electron Device Letters 40 (1), 79-82, 2018 | 42 | 2018 |
| Persistent photoconductivity and carrier transport in AlGaN∕ GaN heterostructures treated by fluorine plasma BK Li, WK Ge, JN Wang, KJ Chen Applied physics letters 92 (8), 2008 | 40 | 2008 |
| Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and … I Irfan, S Golovynskyi, M Bosi, L Seravalli, OA Yeshchenko, B Xue, ... The Journal of Physical Chemistry C 125 (7), 4119-4132, 2021 | 37 | 2021 |
| An analytical investigation on the charge distribution and gate control in the normally-off GaN double-channel MOS-HEMT J Wei, M Zhang, B Li, X Tang, KJ Chen IEEE Transactions on Electron Devices 65 (7), 2757-2764, 2018 | 32 | 2018 |
| Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots G Cheng, B Li, C Zhao, X Yan, H Wang, KM Lau, J Wang Nano Letters 18 (9), 5640-5645, 2018 | 31 | 2018 |
Xi TangAnhui University在 ahu.edu.cn 的电子邮件经过验证
