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Seval Arslan
Seval Arslan
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Facet cooling in high-power InGaAs/AlGaAs lasers
S Arslan, S Gündoğdu, A Demir, A Aydınlı
IEEE Photonics Technology Letters 31 (1), 94-97, 2018
202018
Epitaxial design progress for high power, efficiency, and brightness in 970 nm broad area lasers
A Boni, S Arslan, G Erbert, P Della Casa, D Martin, P Crump
High-Power Diode Laser Technology XIX 11668, 15-22, 2021
182021
Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers
S Arslan, RB Swertfeger, J Fricke, A Ginolas, C Stölmacker, H Wenzel, ...
Applied Physics Letters 117 (20), 2020
162020
Efficient, high power 780 nm pumps for high energy class mid-infrared solid state lasers
P Crump, M Wilkens, M Hübner, S Arslan, M Niemeyer, PS Basler, ...
High-Power Diode Laser Technology XVIII 11262, 16-22, 2020
162020
Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers
S Arslan, A Demir, S Şahin, A Aydınlı
Semiconductor Science and Technology 33 (2), 025001, 2018
162018
Longitudinal spatial hole burning and associated non-uniform current and carrier density profile as a power limit in high power diode lasers
S Arslan, H Wenzel, J Fricke, A Thies, A Ginolas, C Stölmacker, ...
Novel In-Plane Semiconductor Lasers XXI 12021, 93-100, 2022
102022
Reduced facet temperature in semiconductor lasers using electrically pumped windows
A Demir, S Arslan, S Gündoğdu, A Aydinli
High-Power Diode Laser Technology XVII 10900, 121-126, 2019
102019
Thermodynamic quantities at high pressures in the i and θ phases of solid nitrogen deduced by raman frequency shifts for the internal modes in literature
H YURTSEVEN, S Saritaş
International Journal of Modern Physics B 27 (09), 1350035, 2013
92013
Approaches for higher power in GaAs-based broad area diode lasers
S Arslan, G Erbert, A Boni, M Wilkens, A Maaßdorf, J Fricke, A Ginolas, ...
2019 IEEE High Power Diode Lasers and Systems Conference (HPD), 51-52, 2019
82019
Carrier density non-pinning at stripe edges and widened lateral far field due to longitudinal temperature variation in broad-area high power diode lasers
SK Khamari, S Arslan, C Zink, SJ Sweeney, P Crump
Applied Physics Letters 122 (21), 2023
42023
Optimizing vertical and lateral waveguides of kW-class laser bars for higher peak power, efficiency and lateral beam quality
MJ Miah, A Boni, S Arslan, D Martin, P Della Casa, P Crump
IEEE Photonics Journal 14 (3), 1-5, 2022
42022
Progress in high power diode laser pumps for high-energy class mid infra-red lasers
S Arslan, A Maaßdorf, D Martin, S Kreutzmann, PA Crump
2021 IEEE Photonics Conference (IPC), 1-2, 2021
42021
The impact of longitudinal spatial hole burning on the carrier density profile in high-power lasers
S Arslan, H Wenzel, J Fricke, A Thies, A Ginolas, A Maaßdorf, C Mayo, ...
2021 27th International Semiconductor Laser Conference (ISLC), 1-2, 2021
42021
Thermal boundary resistance between GaAs and p-side metal as limit to high power diode lasers
J Rieprich, G Blume, A Ginolas, S Arslan, R Kernke, JW Tomm, K Paschke, ...
2019 IEEE High Power Diode Lasers and Systems Conference (HPD), 35-36, 2019
42019
Experimental and theoretical studies into longitudinal spatial hole burning as a power limit in high-power diode lasers at 975 nm
S Arslan, H Wenzel, J Fricke, A Thies, A Ginolas, B Eppich, G Tränkle, ...
Applied Physics Letters 122 (26), 2023
32023
Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency
B King, S Arslan, A Boni, P Della Casa, D Martin, A Thies, A Knigge, ...
High-Power Diode Laser Technology XXI 12403, 147-156, 2023
32023
Longitudinal current crowding as power limit in high power 975 nm diode lasers
RB Swertfeger, SK Patra, RJ Deri, MC Boisselle, DL Pope, PO Leisher, ...
2020 IEEE Photonics Conference (IPC), 1-2, 2020
32020
IFVD-based large intermixing selectivity window process for high power laser diodes
S Arslan, S Şahin, A Demir, A Aydinli
Semiconductor Lasers and Laser Dynamics VIII 10682, 197-203, 2018
22018
High-efficiency and high-brightness broad area laser diodes with buried implantation current blocking
B King, S Arslan, P Della Casa, D Martin, A Boni, A Thies, A Knigge, ...
Physica Scripta 99 (5), 055528, 2024
12024
GaAs-based wide-aperture single emitters with 68 W output power at 69% efficiency realized using a periodic buried-regrown-implant-structure
B King, S Arslan, A Boni, PS Basler, C Zink, P Della Casa, D Martin, ...
The European Conference on Lasers and Electro-Optics, cb_11_1, 2023
12023
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