Chia-Ching LIN
Chia-Ching LIN
Components Research, Intel Corp.
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Cited by
Cited by
Scalable energy-efficient magnetoelectric spin–orbit logic
S Manipatruni, DE Nikonov, CC Lin, TA Gosavi, H Liu, B Prasad, ...
Nature 565 (7737), 35-42, 2019
Spin transfer torque in a graphene lateral spin valve assisted by an external magnetic field
CC Lin, AV Penumatcha, Y Gao, VQ Diep, J Appenzeller, Z Chen
Nano letters 13 (11), 5177-5181, 2013
Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system
S Manipatruni, DE Nikonov, CC Lin, B Prasad, YL Huang, AR Damodaran, ...
Science Advances 4 (11), eaat4229, 2018
Manipulating magnetoelectric energy landscape in multiferroics
YL Huang, D Nikonov, C Addiego, RV Chopdekar, B Prasad, L Zhang, ...
Nature communications 11 (1), 2836, 2020
Spin–orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures
VT Pham, I Groen, S Manipatruni, WY Choi, DE Nikonov, E Sagasta, ...
Nature Electronics, 1-7, 2020
Ultralow voltage manipulation of ferromagnetism
B Prasad, YL Huang, RV Chopdekar, Z Chen, J Steffes, S Das, Q Li, ...
Advanced materials 32 (28), 2001943, 2020
Tunable charge to spin conversion in strontium iridate thin films
AS Everhardt, DC Mahendra, X Huang, S Sayed, TA Gosavi, Y Tang, ...
Physical Review Materials 3 (5), 051201, 2019
Improvement of spin transfer torque in asymmetric graphene devices
CC Lin, Y Gao, AV Penumatcha, VQ Diep, J Appenzeller, Z Chen
ACS nano 8 (4), 3807-3812, 2014
Toward Intrinsic Ferroelectric Switching in Multiferroic
E Parsonnet, YL Huang, T Gosavi, A Qualls, D Nikonov, CC Lin, I Young, ...
Physical review letters 125 (6), 067601, 2020
Spin–Charge Interconversion in KTaO3 2D Electron Gases
LM Vicente‐Arche, J Bréhin, S Varotto, M Cosset‐Cheneau, S Mallik, ...
Advanced Materials 33 (43), 2102102, 2021
Anti-ferroelectric HfxZr1-xO2 Capacitors for High-density 3-D Embedded-DRAM
SC Chang, N Haratipour, S Shivaraman, TL Brown-Heft, J Peck, CC Lin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 28.1. 1-28.1. 4, 2020
Perpendicular spin injection via spatial modulation of spin orbit coupling
T Gosavi, S Manipatruni, CC Lin, D Nikonov, C Wiegand, I Young
US Patent 11,594,270, 2023
Optimized spin relaxation length in few layer graphene at room temperature
Y Gao, YJ Kubo, CC Lin, Z Chen, J Appenzeller
2012 International Electron Devices Meeting, 4.4. 1-4.4. 4, 2012
Metal/ two-dimensional electron gases for spin-to-charge conversion
LM Vicente-Arche, S Mallik, M Cosset-Cheneau, P Noël, DC Vaz, F Trier, ...
Physical Review Materials 5 (6), 064005, 2021
Enabling ultra-low-voltage switching in BaTiO3
Y Jiang, E Parsonnet, A Qualls, W Zhao, S Susarla, D Pesquera, ...
Nature materials 21 (7), 779-785, 2022
Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory
T Gosavi, S Manipatruni, K Oguz, I Young, D Nikonov, CC Lin
US Patent 11,575,083, 2023
Experimental demonstration of integrated magneto-electric and spin-orbit building blocks implementing energy-efficient logic
CC Lin, T Gosavi, D Nikonov, YL Huang, B Prasad, WY Choi, I Groen, ...
2019 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2019
A Cu-based alloyed Ohmic contact system on -type GaAs
KS Chen, EY Chang, CC Lin, CS Lee, WC Huang, CT Lee
Applied Physics Letters 91 (23), 233511, 2007
Transition metal dichalcogenide based spin orbit torque memory device with magnetic insulator
CC Lin, T Gosavi, S Manipatruni, D Nikonov, I Young
US Patent 11,557,717, 2023
Low‐Voltage Magnetoelectric Coupling in Fe0.5Rh0.5/0.68PbMg1/3Nb2/3O3‐0.32PbTiO3 Thin‐Film Heterostructures
W Zhao, J Kim, X Huang, L Zhang, D Pesquera, GAP Velarde, T Gosavi, ...
Advanced Functional Materials 31 (40), 2105068, 2021
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