| Scalable energy-efficient magnetoelectric spin–orbit logic S Manipatruni, DE Nikonov, CC Lin, TA Gosavi, H Liu, B Prasad, ... Nature 565 (7737), 35-42, 2019 | 696 | 2019 |
| Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system S Manipatruni, DE Nikonov, CC Lin, B Prasad, YL Huang, AR Damodaran, ... Science advances 4 (11), eaat4229, 2018 | 72 | 2018 |
| Spin–orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures VT Pham, I Groen, S Manipatruni, WY Choi, DE Nikonov, E Sagasta, ... Nature Electronics, 1-7, 2020 | 70 | 2020 |
| Spin transfer torque in a graphene lateral spin valve assisted by an external magnetic field CC Lin, AV Penumatcha, Y Gao, VQ Diep, J Appenzeller, Z Chen Nano letters 13 (11), 5177-5181, 2013 | 69 | 2013 |
| Manipulating magnetoelectric energy landscape in multiferroics YL Huang, D Nikonov, C Addiego, RV Chopdekar, B Prasad, L Zhang, ... Nature communications 11 (1), 2836, 2020 | 64 | 2020 |
| Ultralow voltage manipulation of ferromagnetism B Prasad, YL Huang, RV Chopdekar, Z Chen, J Steffes, S Das, Q Li, ... Advanced materials 32 (28), 2001943, 2020 | 62 | 2020 |
| Enabling ultra-low-voltage switching in BaTiO3 Y Jiang, E Parsonnet, A Qualls, W Zhao, S Susarla, D Pesquera, ... Nature materials 21 (7), 779-785, 2022 | 51 | 2022 |
| Spin–Charge Interconversion in KTaO3 2D Electron Gases LM Vicente‐Arche, J Bréhin, S Varotto, M Cosset‐Cheneau, S Mallik, ... Advanced Materials 33 (43), 2102102, 2021 | 48 | 2021 |
| Tunable charge to spin conversion in strontium iridate thin films AS Everhardt, M Dc, X Huang, S Sayed, TA Gosavi, Y Tang, CC Lin, ... Physical Review Materials 3 (5), 051201, 2019 | 48 | 2019 |
| Anti-ferroelectric HfxZr1-xO2 Capacitors for High-density 3-D Embedded-DRAM SC Chang, N Haratipour, S Shivaraman, TL Brown-Heft, J Peck, CC Lin, ... 2020 IEEE International Electron Devices Meeting (IEDM), 28.1. 1-28.1. 4, 2020 | 47 | 2020 |
| Toward Intrinsic Ferroelectric Switching in Multiferroic E Parsonnet, YL Huang, T Gosavi, A Qualls, D Nikonov, CC Lin, I Young, ... Physical review letters 125 (6), 067601, 2020 | 46 | 2020 |
| Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering N Haratipour, SC Chang, CC Lin, J Kavalieros, U Avci, I Young US Patent 11,063,131, 2021 | 35 | 2021 |
| Improvement of spin transfer torque in asymmetric graphene devices CC Lin, Y Gao, AV Penumatcha, VQ Diep, J Appenzeller, Z Chen ACS nano 8 (4), 3807-3812, 2014 | 33 | 2014 |
| Low‐Voltage Magnetoelectric Coupling in Fe0.5Rh0.5/0.68PbMg1/3Nb2/3O3‐0.32PbTiO3 Thin‐Film Heterostructures W Zhao, J Kim, X Huang, L Zhang, D Pesquera, GAP Velarde, T Gosavi, ... Advanced Functional Materials 31 (40), 2105068, 2021 | 24 | 2021 |
| Metal/ two-dimensional electron gases for spin-to-charge conversion LM Vicente-Arche, S Mallik, M Cosset-Cheneau, P Noël, DC Vaz, F Trier, ... Physical Review Materials 5 (6), 064005, 2021 | 20 | 2021 |
| Gate length scaling beyond Si: mono-layer 2D channel FETs robust to short channel effects CJ Dorow, A Penumatcha, A Kitamura, C Rogan, KP O’Brien, S Lee, ... 2022 International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2022 | 19 | 2022 |
| 300 mm MOCVD 2D CMOS materials for more (than) Moore scaling K Maxey, CH Naylor, KP O'Brien, A Penumatcha, A Oni, C Mokhtarzadeh, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 16 | 2022 |
| Optimized spin relaxation length in few layer graphene at room temperature Y Gao, YJ Kubo, CC Lin, Z Chen, J Appenzeller 2012 International Electron Devices Meeting, 4.4. 1-4.4. 4, 2012 | 16 | 2012 |
| Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy S Manipatruni, K Oguz, CC Lin, C Wiegand, T Gosavi, I Young US Patent 11,264,558, 2022 | 14 | 2022 |
| Anti-ferroelectric Hf SC Chang, N Haratipour, S Shivaraman, TL Brown-Heft, J Peck, CC Lin IEDM Tech. Dig, 28.1, 2020 | 14 | 2020 |
Ashish Verma PenumatchaComponents Research, Intel Corp.Verified email at intel.com
