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Chia-Ching LIN
Chia-Ching LIN
Components Research, Intel Corp.
Verified email at intel.com
Title
Cited by
Cited by
Year
Scalable energy-efficient magnetoelectric spin–orbit logic
S Manipatruni, DE Nikonov, CC Lin, TA Gosavi, H Liu, B Prasad, ...
Nature 565 (7737), 35-42, 2019
6352019
Spin transfer torque in a graphene lateral spin valve assisted by an external magnetic field
CC Lin, AV Penumatcha, Y Gao, VQ Diep, J Appenzeller, Z Chen
Nano letters 13 (11), 5177-5181, 2013
682013
Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system
S Manipatruni, DE Nikonov, CC Lin, B Prasad, YL Huang, AR Damodaran, ...
Science advances 4 (11), eaat4229, 2018
632018
Spin–orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures
VT Pham, I Groen, S Manipatruni, WY Choi, DE Nikonov, E Sagasta, ...
Nature Electronics, 1-7, 2020
602020
Ultralow voltage manipulation of ferromagnetism
B Prasad, YL Huang, RV Chopdekar, Z Chen, J Steffes, S Das, Q Li, ...
Advanced materials 32 (28), 2001943, 2020
552020
Manipulating magnetoelectric energy landscape in multiferroics
YL Huang, D Nikonov, C Addiego, RV Chopdekar, B Prasad, L Zhang, ...
Nature communications 11 (1), 2836, 2020
512020
Tunable charge to spin conversion in strontium iridate thin films
AS Everhardt, DC Mahendra, X Huang, S Sayed, TA Gosavi, Y Tang, ...
Physical Review Materials 3 (5), 051201, 2019
452019
Spin–Charge Interconversion in KTaO3 2D Electron Gases
LM Vicente‐Arche, J Bréhin, S Varotto, M Cosset‐Cheneau, S Mallik, ...
Advanced Materials 33 (43), 2102102, 2021
432021
Anti-ferroelectric HfxZr1-xO2 Capacitors for High-density 3-D Embedded-DRAM
SC Chang, N Haratipour, S Shivaraman, TL Brown-Heft, J Peck, CC Lin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 28.1. 1-28.1. 4, 2020
432020
Toward Intrinsic Ferroelectric Switching in Multiferroic
E Parsonnet, YL Huang, T Gosavi, A Qualls, D Nikonov, CC Lin, I Young, ...
Physical review letters 125 (6), 067601, 2020
402020
Enabling ultra-low-voltage switching in BaTiO3
Y Jiang, E Parsonnet, A Qualls, W Zhao, S Susarla, D Pesquera, ...
Nature materials 21 (7), 779-785, 2022
342022
Improvement of spin transfer torque in asymmetric graphene devices
CC Lin, Y Gao, AV Penumatcha, VQ Diep, J Appenzeller, Z Chen
ACS nano 8 (4), 3807-3812, 2014
342014
Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering
N Haratipour, SC Chang, CC Lin, J Kavalieros, U Avci, I Young
US Patent 11,063,131, 2021
252021
Metal/ two-dimensional electron gases for spin-to-charge conversion
LM Vicente-Arche, S Mallik, M Cosset-Cheneau, P Noël, DC Vaz, F Trier, ...
Physical Review Materials 5 (6), 064005, 2021
212021
Optimized spin relaxation length in few layer graphene at room temperature
Y Gao, YJ Kubo, CC Lin, Z Chen, J Appenzeller
2012 International Electron Devices Meeting, 4.4. 1-4.4. 4, 2012
162012
Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy
S Manipatruni, K Oguz, CC Lin, C Wiegand, T Gosavi, I Young
US Patent 11,264,558, 2022
132022
Anti-ferroelectric Hf
SC Chang, N Haratipour, S Shivaraman, TL Brown-Heft, J Peck, CC Lin
IEDM Tech. Dig, 28.1, 2020
112020
Gate length scaling beyond Si: mono-layer 2D channel FETs robust to short channel effects
CJ Dorow, A Penumatcha, A Kitamura, C Rogan, KP O’Brien, S Lee, ...
2022 International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2022
102022
All-Electrical Spin-to-Charge Conversion in Sputtered BixSe1-x
WY Choi, IC Arango, VT Pham, DC Vaz, H Yang, I Groen, CC Lin, ...
Nano Letters 22 (19), 7992-7999, 2022
102022
Experimental demonstration of integrated magneto-electric and spin-orbit building blocks implementing energy-efficient logic
CC Lin, T Gosavi, D Nikonov, YL Huang, B Prasad, WY Choi, I Groen, ...
2019 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2019
102019
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