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Tetiana Slusar
Tetiana Slusar
Quantum optics lab, ETRI
Verified email at etri.re.kr
Title
Cited by
Cited by
Year
Phase transition in bulk single crystals and thin films of by nanoscale infrared spectroscopy and imaging
M Liu, AJ Sternbach, M Wagner, TV Slusar, T Kong, SL Bud'ko, ...
Physical Review B 91 (24), 245155, 2015
1132015
Imaging the nanoscale phase separation in vanadium dioxide thin films at terahertz frequencies
HT Stinson, A Sternbach, O Najera, R Jing, AS Mcleod, TV Slusar, ...
Nature communications 9 (1), 3604, 2018
1022018
Artifact free time resolved near-field spectroscopy
AJ Sternbach, J Hinton, T Slusar, AS McLeod, MK Liu, A Frenzel, ...
Optics Express 25 (23), 28589-28611, 2017
492017
Epitaxial growth of higher transition-temperature VO2 films on AlN/Si
T Slusar, JC Cho, BJ Kim, SJ Yun, HT Kim
APL Materials 4 (2), 2016
372016
Direct observation of the M2 phase with its Mott transition in a VO2 film
H Kim, TV Slusar, D Wulferding, I Yang, JC Cho, M Lee, HC Choi, ...
Applied Physics Letters 109 (23), 2016
332016
Mott Switching and Structural Transition in the Metal Phase of VO2 Nanodomain
CY Kim, T Slusar, J Cho, HT Kim
ACS Applied Electronic Materials 3 (2), 605-610, 2021
282021
Photoheat-induced Schottky nanojunction and indirect Mott transition in VO2: Photocurrent analysis
HT Kim, M Kim, A Sohn, T Slusar, G Seo, H Cheong, DW Kim
Journal of Physics: Condensed Matter 28 (8), 085602, 2016
262016
Highly repeatable nanoscale phase coexistence in vanadium dioxide films
TJ Huffman, DJ Lahneman, SL Wang, T Slusar, BJ Kim, HT Kim, ...
Physical Review B 97 (8), 085146, 2018
222018
Nanotextured Dynamics of a Light-Induced Phase Transition in VO2
AJ Sternbach, FL Ruta, Y Shi, T Slusar, J Schalch, G Duan, AS McLeod, ...
Nano letters 21 (21), 9052-9060, 2021
172021
Mott transition in chain structure of strained VO2 films revealed by coherent phonons
TV Slusar, JC Cho, HR Lee, JW Kim, SJ Yoo, JY Bigot, KJ Yee, HT Kim
Scientific reports 7 (1), 16038, 2017
172017
Highly transparent ultrathin vanadium dioxide films with temperature-dependent infrared reflectance for smart windows
KH Jung, SJ Yun, T Slusar, HT Kim, TM Roh
Applied Surface Science 589, 152962, 2022
112022
Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer
AV Sachenko, VP Kostylyov, VG Litovchenko, VG Popov, BM Romanyuk, ...
Ukrainian journal of physics 58 (2), 142-142, 2013
72013
Insulator-to-metal transition in ultrathin rutile VO2/TiO2(001)
DJ Lahneman, T Slusar, DB Beringer, H Jiang, CY Kim, HT Kim, ...
npj Quantum Materials 7 (1), 72, 2022
52022
A near-field study of VO2/(100) TiO2 film and its crack-induced strain relief
X Chen, S Kittiwatanakul, Y Cheng, TV Slusar, AS Mcleod, Z Li, HT Kim, ...
Applied Physics Letters 121 (2), 2022
42022
Modeling of characteristics of highly efficient textured solar cells based on c-silicon. The influence of recombination in the space charge region
AV Sachenko, VP Kostylyov, VM Vlasiuk, IO Sokolovskyi, MA Evstigneev, ...
Semicond. Phys. Quant. Electron. Optoelectron 26 (005), 2023
32023
Influence of surface centers on the effective surface recombination rate and the parameters of silicon solar cells
VP Kostylyov, AV Sachenko, IO Sokolovskyi, VV Chernenko, TV Slusar, ...
arXiv preprint arXiv:1304.7680, 2013
32013
Features of solar cells and solar silicon wafers surface photovoltage spectral dependences in the short-wave absorption region
VP Kostylyov, VG Litovchenko, AV Sachenko, TV Slusar, VV Chernenko
Proceedings 28, 1715-1718, 0
3
Artifact Free Transient Near-Field Nanoscopy
A Sternbach, J Hinton, T Slusar, AS McLeod, M Liu, A Frenzel, M Wagner, ...
arXiv preprint arXiv:1706.08478, 2017
22017
Inhomogeneous Photosusceptibility of Films at the Nanoscale
AJ Sternbach, T Slusar, FL Ruta, S Moore, X Chen, MK Liu, HT Kim, ...
Physical Review Letters 132 (18), 186903, 2024
12024
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
VP Kostylyov, AV Sachenko, OA Serba, TV Slusar, VM Vlasyuk, ...
Semiconductor physics, quantum electronics & optoelectronics, 464-467, 2015
12015
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