| Fingerprint Image Enhancement And It‟ s Feature Extraction For Recognition P Bhowmik, K Bhowmik, MN Azam, MW Rony Int J Sci Technol Res 1 (5), 117-121, 2012 | 32 | 2012 |
| Comparison of total-ionizing-dose effects in bulk and SOI FinFETs at 90 and 295 K TD Haeffner, RF Keller, R Jiang, BD Sierawski, MW McCurdy, EX Zhang, ... IEEE Transactions on Nuclear Science 66 (6), 911-917, 2019 | 24 | 2019 |
| 3-D full-band Monte Carlo simulation of hot-electron energy distributions in gate-all-around Si nanowire MOSFETs M Reaz, AM Tonigan, K Li, MB Smith, MW Rony, M Gorchichko, A O’Hara, ... IEEE Transactions on Electron Devices 68 (5), 2556-2563, 2021 | 16 | 2021 |
| Simulation of a time dependent 2D generator model using COMSOL Multiphysics KS Arefin, P Bhowmik, MW Rony, MN Azam International Journal of Advances in Engineering & Technology 4 (1), 85, 2012 | 10 | 2012 |
| Short channel effects suppression in a dual-gate gate-all-around Si nanowire junctionless nMOSFET MW Rony, P Bhowmik, HR Myler, P Mondol 2016 9th International Conference on Electrical and Computer Engineering …, 2016 | 8 | 2016 |
| Effects of layer-to-layer coupling on the total-ionizing-dose response of 3-D-sequentially integrated FD-SOI MOSFETs S Toguchi, EX Zhang, MW Rony, X Luo, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 69 (7), 1420-1427, 2021 | 5 | 2021 |
| Single-event-induced charge collection in Ge-channel pMOS FinFETs MW Rony, IK Samsel, EX Zhang, A Sternberg, K Li, M Reaz, SM Austin, ... IEEE Transactions on Nuclear Science 68 (5), 807-814, 2021 | 4 | 2021 |
| Sensitivity of a 10nm dual-gate GAA Si nanowire nMOSFET to process variation MW Rony, P Mondol, HR Myler 2016 19th International Conference on Computer and Information Technology …, 2016 | 4 | 2016 |
| Negative-bias-stress and total-ionizing-dose effects in deeply scaled Ge-GAA nanowire pFETs MW Rony, EX Zhang, S Toguchi, X Luo, M Reaz, K Li, D Linten, J Mitard, ... IEEE Transactions on Nuclear Science 69 (3), 299-306, 2022 | 3 | 2022 |
| Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics K Li, X Luo, MW Rony, M Gorchichko, G Hiblot, S Van Huylenbroeck, ... IEEE Transactions on Nuclear Science 70 (4), 442-448, 2023 | 2 | 2023 |
| A system-level modeling approach for simulating radiation effects in successive-approximation analog-to-digital converters MW Rony, EX Zhang, M Reaz, K Li, A Daniel, B Rax, P Adell, J Kauppila, ... IEEE Transactions on Nuclear Science 68 (7), 1465-1472, 2021 | 2 | 2021 |
| Radiation Effects and Negative Bias-Stress in Ge-Channel FinFet & Nanowire Devices MW Rony Vanderbilt University, 2022 | 1 | 2022 |
| Unified Mechanism for Graphene FET's Electrothermal Breakdown and Its Implications on Safe Operating Limits M Reaz, AM Tonigan, K Li, MB Smith, MW Rony, M Gorchichko, A O'Hara, ... IEEE TRANSACTIONS ON ELECTRON DEVICES 68 (5), 2556-2563, 2021 | | 2021 |
| Overview of Model-Based System Assurance for Spacecraft with Commercial Parts A Witulski, K Ryder, M Reaz, M Rony, R Austin, G Karsai, N Mahadevan, ... | | 2020 |
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityVerified email at vanderbilt.edu
