Follow
Mohammed Wahiduzzaman Rony
Mohammed Wahiduzzaman Rony
Intel Corporation
Verified email at vanderbilt.edu
Title
Cited by
Cited by
Year
Fingerprint Image Enhancement And It‟ s Feature Extraction For Recognition
P Bhowmik, K Bhowmik, MN Azam, MW Rony
Int J Sci Technol Res 1 (5), 117-121, 2012
322012
Comparison of total-ionizing-dose effects in bulk and SOI FinFETs at 90 and 295 K
TD Haeffner, RF Keller, R Jiang, BD Sierawski, MW McCurdy, EX Zhang, ...
IEEE Transactions on Nuclear Science 66 (6), 911-917, 2019
242019
3-D full-band Monte Carlo simulation of hot-electron energy distributions in gate-all-around Si nanowire MOSFETs
M Reaz, AM Tonigan, K Li, MB Smith, MW Rony, M Gorchichko, A O’Hara, ...
IEEE Transactions on Electron Devices 68 (5), 2556-2563, 2021
162021
Simulation of a time dependent 2D generator model using COMSOL Multiphysics
KS Arefin, P Bhowmik, MW Rony, MN Azam
International Journal of Advances in Engineering & Technology 4 (1), 85, 2012
102012
Short channel effects suppression in a dual-gate gate-all-around Si nanowire junctionless nMOSFET
MW Rony, P Bhowmik, HR Myler, P Mondol
2016 9th International Conference on Electrical and Computer Engineering …, 2016
82016
Effects of layer-to-layer coupling on the total-ionizing-dose response of 3-D-sequentially integrated FD-SOI MOSFETs
S Toguchi, EX Zhang, MW Rony, X Luo, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 69 (7), 1420-1427, 2021
42021
Single-event-induced charge collection in Ge-channel pMOS FinFETs
MW Rony, IK Samsel, EX Zhang, A Sternberg, K Li, M Reaz, SM Austin, ...
IEEE Transactions on Nuclear Science 68 (5), 807-814, 2021
42021
Sensitivity of a 10nm dual-gate GAA Si nanowire nMOSFET to process variation
MW Rony, P Mondol, HR Myler
2016 19th International Conference on Computer and Information Technology …, 2016
42016
Negative-bias-stress and total-ionizing-dose effects in deeply scaled Ge-GAA nanowire pFETs
MW Rony, EX Zhang, S Toguchi, X Luo, M Reaz, K Li, D Linten, J Mitard, ...
IEEE Transactions on Nuclear Science 69 (3), 299-306, 2022
32022
Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics
K Li, X Luo, MW Rony, M Gorchichko, G Hiblot, S Van Huylenbroeck, ...
IEEE Transactions on Nuclear Science 70 (4), 442-448, 2023
22023
A system-level modeling approach for simulating radiation effects in successive-approximation analog-to-digital converters
MW Rony, EX Zhang, M Reaz, K Li, A Daniel, B Rax, P Adell, J Kauppila, ...
IEEE Transactions on Nuclear Science 68 (7), 1465-1472, 2021
22021
Radiation Effects and Negative Bias-Stress in Ge-Channel FinFet & Nanowire Devices
MW Rony
Vanderbilt University, 2022
12022
Unified Mechanism for Graphene FET's Electrothermal Breakdown and Its Implications on Safe Operating Limits
M Reaz, AM Tonigan, K Li, MB Smith, MW Rony, M Gorchichko, A O'Hara, ...
IEEE TRANSACTIONS ON ELECTRON DEVICES 68 (5), 2556-2563, 2021
2021
Overview of Model-Based System Assurance for Spacecraft with Commercial Parts
A Witulski, K Ryder, M Reaz, M Rony, R Austin, G Karsai, N Mahadevan, ...
2020
The system can't perform the operation now. Try again later.
Articles 1–14