| Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions A Mballo, A Srivastava, S Sundaram, P Vuong, S Karrakchou, Y Halfaya, ... Nanomaterials 211 (11(1)), 2021 | 16 | 2021 |
| Novel scalable transfer approach for discrete III‐nitride devices using wafer‐scale patterned H‐BN/sapphire substrate for pick‐and‐place applications T Ayari, S Sundaram, C Bishop, A Mballo, P Vuong, Y Halfaya, ... Advanced Materials Technologies 4 (10), 1900164, 2019 | 16 | 2019 |
| Control of the mechanical adhesion of III–V materials grown on layered h-BN P Vuong, S Sundaram, A Mballo, G Patriarche, S Leone, F Benkhelifa, ... ACS Applied Materials & Interfaces 12 (49), 55460-55466, 2020 | 15 | 2020 |
| Single crystalline boron rich B (Al) N alloys grown by MOVPE P Vuong, A Mballo, S Sundaram, G Patriarche, Y Halfaya, S Karrakchou, ... Applied Physics Letters 116 (4), 2020 | 15 | 2020 |
| MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics S Sundaram, P Vuong, A Mballo, T Ayari, S Karrakchou, G Patriarche, ... APL Materials 9 (6), 2021 | 14 | 2021 |
| Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates S Karrakchou, S Sundaram, T Ayari, A Mballo, P Vuong, A Srivastava, ... Scientific Reports 10 (1), 21709, 2020 | 13 | 2020 |
| Nanopyramid-based absorber to boost the efficiency of InGaN solar cells W El Huni, S Karrakchou, Y Halfaya, M Arif, MB Jordan, R Puybaret, ... Solar Energy 190, 93-103, 2019 | 12 | 2019 |
| Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer S Karrakchou, S Sundaram, R Gujrati, P Vuong, A Mballo, HE Adjmi, ... ACS Applied Electronic Materials 3 (6), 2614-2621, 2021 | 9 | 2021 |
| Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors A Mballo, A Ahaitouf, S Sundaram, A Srivastava, V Ottapilakkal, R Gujrati, ... ACS omega 7 (1), 804-809, 2021 | 8 | 2021 |
| Design and fabrication process flow for high-efficiency and flexible InGaN solar cells R Gujrati, S Karrakchou, L Oliverio, S Sundaram, PL Voss, E Monroy, ... Micro and Nanostructures 176, 207538, 2023 | 4 | 2023 |
| Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor NY Sama, A Hathcock, D He, TQP Vuong, S Karrakchou, T Ayari, ... 2019 IEEE SENSORS, 1-4, 2019 | 4 | 2019 |
| Novel approaches of epitaxial growth and layer transfer techniques using 2D h-BN for flexible GaN-based LEDs and Micro-LEDs A Ougazzaden, S Sundaram, P Vuong, S Karrakchou, A Mballo, R Gujrat, ... Gallium Nitride Materials and Devices XVIII, 2023 | | 2023 |
| Wafer-scale van der Waals Epitaxy of III-Nitride Devices on h-BN-An Overview of 2D/3D Epitaxy, Device Fabrication, Mechanical Release-Transfer Methods and Device Performances A Ougazzaden, S Sundaram, TQP Vuong, S Karrakchou, A Mballo, ... MRS 2021, 2021 | | 2021 |
| MOVPE growth of h-BN on patterned sapphire substrates and its application on selective area growth of GaN based LEDs structures S Sundaram, S Karrakchou, A Mballo, TQP Vuong, Y Halfaya, ... MRS 2021, 2021 | | 2021 |
| Effect of aluminium diffusion into 2D hBN on the mechanical release of III-N heterostructures TQP Vuong, S Sundaram, A Mballo, G Patriarche, S Karrakchou, ... MRS 2021, 2021 | | 2021 |
| NEW PROCESSES FOR HETEROGENEOUS INTEGRATION OF III-NITRIDE OPTOELECTRONIC DEVICES: APPLICATION TO INGAN-BASED LIGHT EMITTING DIODES AND SOLAR CELLS GROWN ON 2D H-BN S Karrakchou Georgia Institute of Technology, 2021 | | 2021 |
| Van der Waals epitaxy by MOCVD of III-Nitrides using two-dimensional hexagonal boron nitride: applications and persperctives TQP Vuong, A Mballo, S Karrakchou, A Srivastava, R Gujrati, H Adjmi, ... Workshop Wide bandgap materials, 2021 | | 2021 |
| Side-by-side comparison of pre-and post-transferred LEDs grown on 2D hexagonal boron nitride onto arbitrary substrates S Karrakchou, S Sundaram, T Ayari, A Mballo, P Vuong, A Srivastava, ... Gallium Nitride Materials and Devices XVI 11686, 1168619, 2021 | | 2021 |
| Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019) T Ayari, S Sundaram, C Bishop, A Mballo, P Vuong, Y Halfaya, ... Advanced Materials Technologies 4 (10), 1970057, 2019 | | 2019 |
