| Self-Powered Visible–Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes J Ahn, JH Kang, J Kyhm, HT Choi, M Kim, DH Ahn, DY Kim, IH Ahn, ... ACS applied materials & interfaces 12 (9), 10858-10866, 2020 | 53 | 2020 |
| Effects of ZrO2/Al2O3 Gate-Stack on the Performance of Planar-Type InGaAs TFET DH Ahn, SH Yoon, K Kato, T Fukui, M Takenaka, S Takagi IEEE Transactions on Electron Devices 66 (4), 1862-1867, 2019 | 29 | 2019 |
| Effects of HfO2/Al2O3 gate stacks on electrical performance of planar InxGa1− xAs tunneling field-effect transistors DH Ahn, SH Yoon, M Takenaka, S Takagi Applied Physics Express 10 (8), 084201, 2017 | 26 | 2017 |
| Performance improvement of InxGa1−xAs Tunnel FETs with Quantum Well and EOT scaling DH Ahn, SM Ji, M Takenaka, S Takagi 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 25 | 2016 |
| Heterogeneously-integrated optical phase shifters for next-generation modulators and switches on a silicon photonics platform: A review Y Kim, JH Han, D Ahn, S Kim Micromachines 12 (6), 625, 2021 | 20 | 2021 |
| Design and properties of planar-type tunnel FETs using In0. 53Ga0. 47As/InxGa1-xAs/In0. 53Ga0. 47As quantum well DH Ahn, SM Ji, M Takenaka, S Takagi Journal of Applied Physics 122 (13), 2017 | 16 | 2017 |
| Tunneling MOSFET technologies using III-V/Ge materials S Takagi, DH Ahn, M Noguchi, T Gotow, K Nishi, M Kim, M Takenaka 2016 IEEE International Electron Devices Meeting (IEDM), 19.5. 1-19.5. 4, 2016 | 16 | 2016 |
| Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties SH Yoon, K Kato, C Yokoyama, DH Ahn, M Takenaka, S Takagi Journal of Applied Physics 126 (18), 2019 | 9 | 2019 |
| GaAs/Si tandem solar cells with an optically transparent InAlAs/GaAs strained layer superlattices dislocation filter layer Y Kim, MA Madarang, E Ju, T Laryn, RJ Chu, TS Kim, DH Ahn, T Kim, ... Energies 16 (3), 1158, 2023 | 7 | 2023 |
| Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays T Jin, S Kim, JH Han, DH Ahn, SU An, TH Noh, X Sun, CJ Kim, J Park, ... Nanoscale Advances 5 (5), 1316-1322, 2023 | 5 | 2023 |
| Enhanced photoluminescence of 1.3 μm InAs quantum dots grown on ultrathin GaAs Buffer/Si templates by suppressing interfacial defect emission Y Kim, RJ Chu, G Ryu, S Woo, QND Lung, DH Ahn, JH Han, WJ Choi, ... ACS Applied Materials & Interfaces 14 (39), 45051-45058, 2022 | 5 | 2022 |
| Energy-Efficient III–V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing DH Ahn, S Hu, K Ko, D Park, H Suh, GT Kim, JH Han, JD Song, YJ Jeong ACS Applied Materials & Interfaces 14 (21), 24592-24601, 2022 | 5 | 2022 |
| Optical properties of coherent InAs/InGaAs quantum dash-in-a-well for strong 2 μm emission enabled by ripening process RJ Chu, DH Ahn, G Ryu, WJ Choi, D Jung Journal of Alloys and Compounds 859, 157783, 2021 | 5 | 2021 |
| Cavity-enhanced InGaAs photo-FET with a metal gate reflector fabricated by wafer bonding on Si S Kang, DH Ahn, I Lee, WJ Choi, J Song, JH Han Optics Express 29 (26), 42630-42641, 2021 | 4 | 2021 |
| Interface state generation of Al2O3/InGaAs MOS structures by electrical stress SH Yoon, CY Chang, DH Ahn, M Takenaka, S Takagi Microelectronic Engineering 178, 313-317, 2017 | 4 | 2017 |
| III–V-based low power CMOS devices on Si platform S Takagi, DH Ahn, T Gotow, M Noguchi, K Nishi, SH Kim, M Yokoyama, ... 2017 IEEE International Conference on IC Design and Technology (ICICDT), 1-4, 2017 | 4 | 2017 |
| Ultra-Low Power III-V-Based MOSFETs and Tunneling FETs S Takagi, DH Ahn, T Gotow, C Yokoyama, CY Chang, K Endo, K Kato, ... ECS Transactions 85 (8), 27, 2018 | 3 | 2018 |
| Low Power Tunneling FET Technologies Using Ge/III-V Materials S Takagi, DH Ahn, M Noguchi, S Yoon, T Gotow, K Nishi, M Kim, TE Bae, ... ECS Transactions 80 (4), 115, 2017 | 3 | 2017 |
| High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications DH Ahn, S Jeon, H Suh, S Woo, RJ Chu, D Jung, WJ Choi, D Park, ... Photonics Research 11 (8), 1465-1473, 2023 | 2 | 2023 |
| Non-volatile operation of a Si PN ring resonator with a ferroelectric capacitor SM Han, DW Rho, DH Ahn, JD Song, WY Choi, JH Han 2021 Optical Fiber Communications Conference and Exhibition (OFC), 1-3, 2021 | 2 | 2021 |
