| AlGaN/GaN HEMTs on Diamond Substrate obtained through Aluminum Nitride Bonding Technology M Abou Daher, M Lesecq, P Tilmant, N Defrance, M ROUSSEAU, ... JVST: B 38 (3), 2020 | 11* | 2020 |
| Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer M Abou Daher, M Lesecq, N Defrance, E Okada, B Boudart, Y Guhel, ... Microwave and Optical Technology Letters 63 (9), 2376-2380, 2021 | 4 | 2021 |
| On the practical limitations for the generation of Gunn oscillations in highly doped GaN diodes S García-Sánchez, M Abou Daher, M Lesecq, L Huo, R Lingaparthi, ... IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| Differential hall characterization of shallow strained SiGe layers R Daubriac, MA Daher, F Cristano, E Scheid, S Joblot, D Barge Nanotechnology Materials and Devices Conference (NMDC), 2016 IEEE, 1-2, 2016 | 1 | 2016 |
| Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes B Orfao, M Abou Daher, RA Peña, BG Vasallo, S Pérez, ... Journal of Applied Physics 135 (1), 2024 | | 2024 |
| Power Handling of GaN Schottky Diodes on Semi-Insulating Ammonothermal GaN Substrate at 94 GHz M Abou Daher, H Bouillaud, P Prystawko, M Bockowski, E Okada, ... WOCSDICE-EXMATEC, 2023 | | 2023 |
| Comparison of AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/Si (111), Si (111) and 6H-SiC for RF applications M Lesecq, É Frayssinet, M Portail, M Bah, N Defrance, TH Ngo, ... International Workshop on Nitride Semi-conductors, IWN 2022, 2022 | | 2022 |
| AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si (111) for RF Applications M Lesecq, E Frayssinet, M Portail, M Bah, N Defrance, TH Ngo, ... Materials Science Forum 1062, 482-486, 2022 | | 2022 |
| Fabrication and optimization of high power and high frequency HEMT GaN transistors by layer transfer technology on host substrate M Abou Daher Université Paul Sabatier-Toulouse III, 2020 | | 2020 |
| Réalisation et optimisation de transistors HEMT GaN forte puissance et haute fréquence par technologie de transfert de couches sur substrat hôte M Abou Daher Université Paul Sabatier-Toulouse III, 2020 | | 2020 |
| RF & Microwave 2018, 7ème Salon Radiofréquences, Hyperfréquences, Wireless, CEM et Fibre Optique, Paris, France, 21-22 mars, 2018. JCDJ M. Lesecq, F. Cozette, M. Abou Daher, M-R. Irekti, M. Boucherta, N ... RF & Microwave 2018 - Paris, http://www.microwave-rf.com/documents/10, 2018 | | 2018 |
| [Invité] Nouvelles voies technologiques pour la mesure de la température et l’amélioration de la dissipation thermique des HEMTs GaN M Lesecq, F Cozette, M Abou Daher, MR Irekti, M Boucherta, N Defrance, ... RF & Microwave 2018, 7ème Salon Radiofréquences, Hyperfréquences, Wireless …, 2018 | | 2018 |
