| Mechanism of Threshold Voltage Shift in-GaN Gate AlGaN/GaN Transistors X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev IEEE Electron Device Letters 39 (8), 1145-1148, 2018 | 116 | 2018 |
| Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices HAMAA Sima Dimitrijev, Jisheng Han MRS Bulletin 40 (05), 399-405, 2015 | 105 | 2015 |
| Active defects in MOS devices on 4H-SiC: A critical review HA Moghadam, S Dimitrijev, J Han, D Haasmann Microelectronics Reliability 60, 1-9, 2016 | 63 | 2016 |
| Transient-current method for measurement of active near-interface oxide traps in 4H-SiC MOS capacitors and MOSFETs HA Moghadam, S Dimitrijev, J Han, D Haasmann, A Aminbeidokhti IEEE Transactions on Electron Devices 62 (8), 2670-2674, 2015 | 63 | 2015 |
| A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage SEJ Mahabadi, AA Orouji, P Keshavarzi, HA Moghadam Semiconductor Science and Technology 26 (9), 095005, 2011 | 55 | 2011 |
| Comprehensive study of a 4H–SiC MES–MOSFET SEJ Mahabadi, HA Moghadam Physica E: Low-dimensional Systems and Nanostructures 74, 25-29, 2015 | 31 | 2015 |
| Double window partial SOI-LDMOSFET: A novel device for breakdown voltage improvement AA Orouji, HA Moghadam, A Dideban Physica E: Low-dimensional Systems and Nanostructures 43 (1), 498-502, 2010 | 27 | 2010 |
| Gate-voltage independence of electron mobility in power AlGaN/GaN HEMTs A Aminbeidokhti, S Dimitrijev, AK Hanumanthappa, HA Moghadam, ... IEEE Transactions on Electron Devices 63 (3), 1013-1019, 2016 | 25 | 2016 |
| Quantified density of performance-degrading near-interface traps in SiC MOSFETs M Chaturvedi, S Dimitrijev, D Haasmann, HA Moghadam, P Pande, ... Scientific reports 12 (1), 4076, 2022 | 20 | 2022 |
| Direct measurement of active near-interface traps in the strong-accumulation region of 4H-SiC MOS capacitors P Pande, S Dimitrijev, D Haasmann, HA Moghadam, P Tanner, J Han IEEE Journal of the Electron Devices Society 6, 468-474, 2018 | 20 | 2018 |
| Electrical characterization of SiC MOS capacitors: A critical review P Pande, D Haasmann, J Han, HA Moghadam, P Tanner, S Dimitrijev Microelectronics Reliability 112, 113790, 2020 | 16 | 2020 |
| The correct equation for the current through voltage-dependent capacitors U Jadli, F Mohd-Yasin, HA Moghadam, JR Nicholls, P Pande, S Dimitrijev IEEE Access 8, 98038-98043, 2020 | 16 | 2020 |
| Effect of Hole-Injection on Leakage Degradation in a-GaN Gate AlGaN/GaN Power Transistor X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev IEEE Electron Device Letters 39 (8), 1203-1206, 2018 | 16 | 2018 |
| A novel 4H–SiC SOI-MESFET with a modified breakdown voltage mechanism for improving the electrical performance HA Moghadam, AA Orouji, A Dideban Semiconductor science and technology 27 (1), 015001, 2011 | 16 | 2011 |
| Investigation of the novel attributes in double recessed gate SiC MESFETs at drain side AA Orouji, SM Razavi, SE Hosseini, HA Moghadam Semiconductor science and technology 26 (11), 115001, 2011 | 16 | 2011 |
| A novel step buried oxide partial SOI LDMOSFET with triple drift layer SEJ Mahabadi, AA Orouji, P Keshavarzi, S Rajabi, HA Moghadam, ... 2011 International Conference on Signal Processing, Communication, Computing …, 2011 | 16 | 2011 |
| Modeling power GaN-HEMTs using standard MOSFET equations and parameters in SPICE U Jadli, F Mohd-Yasin, HA Moghadam, P Pande, M Chaturvedi, ... Electronics 10 (2), 130, 2021 | 15 | 2021 |
| Design and performance considerations of novel 4H–SiC MESFET with a p-type pillar for increasing breakdown voltage HA Moghadam, AA Orouji Physica E: Low-dimensional Systems and Nanostructures 43 (10), 1779-1782, 2011 | 15 | 2011 |
| Comparison of commercial planar and trench SiC MOSFETs by electrical characterization of performance-degrading near-interface traps M Chaturvedi, S Dimitrijev, D Haasmann, HA Moghadam, P Pande, ... IEEE Transactions on Electron Devices 69 (11), 6225-6230, 2022 | 14 | 2022 |
| Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias X Tang, B Li, HA Moghadam, P Tanner, J Han, H Li, S Dimitrijev, J Wang Japanese Journal of Applied Physics 57 (12), 124101, 2018 | 14 | 2018 |
