| Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque Z Wang, W Zhao, E Deng, JO Klein, C Chappert Journal of Physics D: Applied Physics 48 (6), 065001, 2015 | 249 | 2015 |
| Low power magnetic full-adder based on spin transfer torque MRAM E Deng, Y Zhang, JO Klein, D Ravelsona, C Chappert, W Zhao IEEE transactions on magnetics 49 (9), 4982-4987, 2013 | 162 | 2013 |
| Compact model of dielectric breakdown in spin-transfer torque magnetic tunnel junction Y Wang, H Cai, LA de Barros Naviner, Y Zhang, X Zhao, E Deng, JO Klein, ... IEEE Transactions on Electron Devices 63 (4), 1762-1767, 2016 | 161 | 2016 |
| Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses Y Wang, Y Zhang, EY Deng, JO Klein, LAB Naviner, WS Zhao Microelectronics Reliability 54 (9-10), 1774-1778, 2014 | 128 | 2014 |
| Ultra low power magnetic flip-flop based on checkpointing/power gating and self-enable mechanisms D Chabi, W Zhao, E Deng, Y Zhang, NB Romdhane, JO Klein, C Chappert IEEE Transactions on Circuits and Systems I: Regular Papers 61 (6), 1755-1765, 2014 | 126 | 2014 |
| Synchronous non-volatile logic gate design based on resistive switching memories W Zhao, M Moreau, E Deng, Y Zhang, JM Portal, JO Klein, M Bocquet, ... IEEE Transactions on Circuits and Systems I: Regular Papers 61 (2), 443-454, 2013 | 124 | 2013 |
| A radiation hardened hybrid spintronic/CMOS nonvolatile unit using magnetic tunnel junctions W Zhao, E Deng, JO Klein, Y Cheng, D Ravelosona, Y Zhang, C Chappert Journal of Physics D: Applied Physics 47 (40), 405003, 2014 | 80 | 2014 |
| Separated precharge sensing amplifier for deep submicrometer MTJ/CMOS hybrid logic circuits W Kang, E Deng, JO Klein, Y Zhang, Y Zhang, C Chappert, D Ravelosona, ... IEEE Transactions on Magnetics 50 (6), 1-5, 2014 | 74 | 2014 |
| Synchronous 8-bit non-volatile full-adder based on spin transfer torque magnetic tunnel junction E Deng, Y Zhang, W Kang, B Dieny, JO Klein, G Prenat, W Zhao IEEE Transactions on Circuits and Systems I: Regular Papers 62 (7), 1757-1765, 2015 | 61 | 2015 |
| A novel MTJ-based non-volatile ternary content-addressable memory for high-speed, low-power, and high-reliable search operation C Wang, D Zhang, L Zeng, E Deng, J Chen, W Zhao IEEE Transactions on Circuits and Systems I: Regular Papers 66 (4), 1454-1464, 2018 | 60 | 2018 |
| Magnetic nonvolatile flipflop with spinHall assistance Z Wang, W Zhao, E Deng, Y Zhang, JO Klein physica status solidi (RRL)–Rapid Research Letters 9 (6), 375-378, 2015 | 48 | 2015 |
| High-frequency low-power magnetic full-adder based on magnetic tunnel junction with spin-hall assistance E Deng, Z Wang, JO Klein, G Prenat, B Dieny, W Zhao IEEE Transactions on Magnetics 51 (11), 1-4, 2015 | 43 | 2015 |
| Design optimization and analysis of multicontext STT-MTJ/CMOS logic circuits E Deng, W Kang, Y Zhang, JO Klein, C Chappert, W Zhao IEEE Transactions on Nanotechnology 14 (1), 169-177, 2014 | 38 | 2014 |
| Spintronic processing unit within voltage-gated spin Hall effect MRAMs H Zhang, W Kang, B Wu, P Ouyang, E Deng, Y Zhang, W Zhao IEEE Transactions on Nanotechnology 18, 473-483, 2019 | 30 | 2019 |
| Robust magnetic full-adder with voltage sensing 2T/2MTJ cell E Deng, Y Wang, Z Wang, JO Klein, B Dieny, G Prenat, W Zhao Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale …, 2015 | 29 | 2015 |
| Spintronic computing-in-memory architecture based on voltage-controlled spin–orbit torque devices for binary neural networks H Wang, W Kang, B Pan, H Zhang, E Deng, W Zhao IEEE Transactions on Electron Devices 68 (10), 4944-4950, 2021 | 23 | 2021 |
| A high-reliability and low-power computing-in-memory implementation within STT-MRAM L Zhang, E Deng, H Cai, Y Wang, L Torres, A Todri-Sanial, Y Zhang Microelectronics Journal 81, 69-75, 2018 | 20 | 2018 |
| Spintronic logic-in-memory paradigms and implementations W Kang, E Deng, Z Wang, W Zhao Applications of Emerging Memory Technology: Beyond Storage, 215-229, 2020 | 19 | 2020 |
| Demonstration of multi-state memory device combining resistive and magnetic switching behaviors Y Zhang, W Cai, W Kang, J Yang, E Deng, YG Zhang, W Zhao, ... IEEE Electron Device Letters 39 (5), 684-687, 2018 | 19 | 2018 |
| A reconfigurable arbiter MPUF with high resistance against machine learning attack R Ali, H Ma, Z Hou, D Zhang, E Deng, Y Wang IEEE Transactions on Magnetics 57 (10), 1-7, 2021 | 16 | 2021 |
Weisheng ZhaoFert Beijing Institute, Beihang University在 buaa.edu.cn 的电子邮件经过验证
