| Multifunctional high-performance van der Waals heterostructures M Huang, S Li, Z Zhang, X Xiong, X Li, Y Wu Nature nanotechnology 12 (12), 1148-1154, 2017 | 316 | 2017 |
| Reconfigurable logic‐in‐memory and multilingual artificial synapses based on 2D heterostructures X Xiong, J Kang, Q Hu, C Gu, T Gao, X Li, Y Wu Advanced Functional Materials 30 (11), 1909645, 2020 | 99 | 2020 |
| High-speed black phosphorus field-effect transistors approaching ballistic limit X Li, Z Yu, X Xiong, T Li, T Gao, R Wang, R Huang, Y Wu Science advances 5 (6), eaau3194, 2019 | 88 | 2019 |
| A transverse tunnelling field-effect transistor made from a van der Waals heterostructure X Xiong, M Huang, B Hu, X Li, F Liu, S Li, M Tian, T Li, J Song, Y Wu Nature Electronics 3 (2), 106-112, 2020 | 76 | 2020 |
| Effect of Dielectric Interface on the Performance of MoS2 Transistors X Li, X Xiong, T Li, S Li, Z Zhang, Y Wu ACS applied materials & interfaces 9 (51), 44602-44608, 2017 | 48 | 2017 |
| High-performance flexible ZnO thin-film transistors by atomic layer deposition M Wang, X Li, X Xiong, J Song, C Gu, D Zhan, Q Hu, S Li, Y Wu IEEE Electron Device Letters 40 (3), 419-422, 2019 | 37 | 2019 |
| High performance black phosphorus electronic and photonic devices with HfLaO dielectric X Xiong, X Li, M Huang, T Li, T Gao, Y Wu IEEE Electron Device Letters 39 (1), 127-130, 2017 | 36 | 2017 |
| Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors X Li, Y Du, M Si, L Yang, S Li, T Li, X Xiong, P Ye, Y Wu Nanoscale 8 (6), 3572-3578, 2016 | 31 | 2016 |
| Optimized transport properties in lithium doped black phosphorus transistors T Gao, X Li, X Xiong, M Huang, T Li, Y Wu IEEE Electron Device Letters 39 (5), 769-772, 2018 | 29 | 2018 |
| Anomalous temperature dependence in metal–black phosphorus contact X Li, R Grassi, S Li, T Li, X Xiong, T Low, Y Wu Nano letters 18 (1), 26-31, 2018 | 27 | 2018 |
| Short-channel graphene mixer with high linearity Q Gao, X Li, M Tian, X Xiong, Z Zhang, Y Wu IEEE Electron Device Letters 38 (8), 1168-1171, 2017 | 26 | 2017 |
| Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET X Xiong, A Tong, X Wang, S Liu, X Li, R Huang, Y Wu 2021 IEEE International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2021 | 22 | 2021 |
| BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with Ion = 970 μA/μm and On/off Ratio Near 1011 at Vds = 0.5 V S Li, M Tian, C Gu, R Wang, M Wang, X Xiong, X Li, R Huang, Y Wu 2019 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2019 | 21 | 2019 |
| High-performance CVD bernal-stacked bilayer graphene transistors for amplifying and mixing signals at High frequencies M Tian, X Li, T Li, Q Gao, X Xiong, Q Hu, M Wang, X Wang, Y Wu ACS applied materials & interfaces 10 (24), 20219-20224, 2018 | 20 | 2018 |
| Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices X Li, X Xiong, Y Wu Chinese Physics B 26 (3), 037307, 2017 | 17 | 2017 |
| Nonvolatile logic and ternary content‐addressable memory based on complementary black phosphorus and rhenium disulfide Transistors X Xiong, J Kang, S Liu, A Tong, T Fu, X Li, R Huang, Y Wu Advanced Materials 34 (48), 2106321, 2022 | 16 | 2022 |
| Black phosphorus radio frequency electronics at cryogenic temperatures T Li, M Tian, S Li, M Huang, X Xiong, Q Hu, S Li, X Li, Y Wu Advanced Electronic Materials 4 (8), 1800138, 2018 | 16 | 2018 |
| High performance gigahertz flexible radio frequency transistors with extreme bending conditions M Wang, M Tian, Z Zhang, S Li, R Wang, C Gu, X Shan, X Xiong, X Li, ... 2019 IEEE International Electron Devices Meeting (IEDM), 8.2. 1-8.2. 4, 2019 | 14 | 2019 |
| Wafer scale mapping and statistical analysis of radio frequency characteristics in highly uniform CVD graphene transistors M Tian, B Hu, H Yang, C Tang, M Wang, Q Gao, X Xiong, Z Zhang, T Li, ... Advanced Electronic Materials 5 (4), 1800711, 2019 | 13 | 2019 |
| Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors X Li, T Li, Z Zhang, X Xiong, S Li, Y Wu IEEE Electron Device Letters 39 (1), 131-134, 2017 | 12 | 2017 |
Yanqing WuPeking UniversityVerified email at pku.edu.cn
